Metal-insulator transition and giant anisotropic magnetoresistance in ultra thin (Ga,Mn)As (2008)
Gareev, R. R., Petukhov, A., Schlapps, M., Doeppe, M., Sadowski, J., Sperl, M., ...
MBE-grown, 5 nm-thick annealed Ga0.95Mn0.05As films with Tc~90K demonstrate transition from metallic to insulating state below To~10K, where sheet resistances Rsh~h/e2 and both longitudinal Rxx and...
GaAs:Mn nanowires grown by molecular beam epitaxy of (Ga,Mn)As at MnAs segregation conditions (2007)
Sadowski, J., Dluzewski, P., Kret, S., Janik, E., Lusakowska, E., Kanski, J., ...
GaAs:Mn nanowires were obtained on GaAs(001) and GaAs(111)B substrates by molecular beam epitaxial growth of (Ga,Mn)As at conditions leading to MnAs phase separation. Their density is proportional to...
Weak localization in ferromagnetic (Ga,Mn)As nanostructures (2007)
Neumaier, D., Wagner, K., Geissler, S., Wurstbauer, U., Sadowski, J., Wegscheider, W., ...
We report on the observation of weak localization in arrays of (Ga,Mn)As nanowires at millikelvin temperatures. The corresponding phase coherence length is typically between 100 nm and 200 nm at 20...
Effect of Annealing on Creation of Nanoclusters in GaMnAs 2007-09-24 - 2007-09-26 (2007)
J. Bak-Misiuk, P. Romanowski, E. Dynowska, J.Z. Domagala, ...
Contribution to a conf. proceeding (journal)
Catalytic growth of ZnTe nanowires by molecular beam epitaxy: structural studies (2007)
E. Janik, P. Dluzewski, S. Kret, A. Presz, H. Kirmse, ...
Journal article
I.N. Demchenko, K. Lawniczak-Jablonska, T. Story, V. Osinniy, R. Jakiela, ...
Journal article
Weak Localization in Ferromagnetic (GaMn)As Nanostructures (2007)
Neumaier, Daniel, Wagner, Konrad, Geißler, Stefan, Wurstbauer, Ursula, Sadowski, J., Wegscheider, Werner, ...
We report on the observation of weak localization in arrays of (Ga,Mn)As nanowires at millikelvin temperatures. The corresponding phase coherence length Lphi is typically between 100 and 200 nm at 20...
TAMR effect in (Ga,Mn)As-based tunnel structures (2007)
Ciorga, Mariusz, Schlapps, Markus, Einwanger, Andreas, Geißler, Stefan, Sadowski, J., Wegscheider, Werner, ...
We discuss the results of our experiments on tunnel devices based on (Ga,Mn)As structures. Those include p + -(Ga, Mn)As/n + -GaAs Esaki diodes and laterally defined narrow nanoconstrictions in...
Tunneling anisotropic magnetoresistance effect in p+(Ga,Mn)As/n+GaAs Esaki diode (2007)
Ciorga, Mariusz, Einwanger, Andreas, Sadowski, J., Wegscheider, Werner, Weiss, Dieter
We have performed magnetotransport experiments on p+-(Ga,Mn)As/n+-GaAs Esaki diode devices. The spin-valve-like signal was observed in these devices in an in-plane magnetic field configuration due to...
Magneto-resistive memory in ferromagnetic (Ga,Mn)As nanostructures (2006)
Figielski, T., Wosinski, T., Morawski, A., Makosa, A., Wrobel, J., Sadowski, J.
We show a novel magneto-resistive effect that appears in lithographically shaped, three-arm nanostructure, fabricated from ferromagnetic (Ga,Mn)As layers. The effect, related to a rearrangement of...
Sadowski, J., Domagala, J. Z., Osinniy, V., Kanski, J., Adell, M., Ilver, L., ...
Thin GaMnAs layers grown by molecular beam epitaxy were subjected to low-temperature post growth annealing, with an amorphous arsenic capping layer deposited on the GaMnAs surface directly after the...
How to make GaMnAs with a high ferromagnetic phase transition temperature? (2006)
Sadowski, J., Domagala, J. Z., Kanski, J., Rodriguez, C. H., Terki, F., Charar, S., ...
We analyse the role of structural defects in GaMnAs and demonstrate how their density can be drastically reduced by in situ post-growth annealing under As capping. Modifications of the magnetic,...
Stanciu, V., Wilhelmsson, O., Bexell, U., Adell, M., Sadowski, J., Kanski, J., ...
The influence of annealing parameters - temperature and time - on the magnetic properties of As-capped (Ga,Mn)As epitaxial thin films have been investigated. The dependence of the transition...
Solid phase epitaxy of ferromagnetic MnAs dots on GaMnAs layers (2005)
Sadowski, J., Adell, M., Kanski, J., Ilver, L., Janik, E., Lusakowska, E., ...
Formation of MnAs quantum dots in a regular ring-like distribution has been found on MBE-grown (GaMn)As surfaces after low-temperature annealing under As capping. The Mn was supplied by out-diffusing...
Stanciu, V., Wilhelmsson, O., Bexell, Ulf, Adell, M., Sadowski, J., Kanski, J., ...
The influence of annealing parameters—temperature (Ta) and time (ta)—on the magnetic properties of As-capped (Ga,Mn)As epitaxial thin films has been investigated. The dependence of the transition...
Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers (2004)
Osinniy, V., Dybko, K., Jedrzejczak, A., Arciszewska, M., Dobrowolski, W., Story, T., ...
Thermoelectric power, electrical conductivity, and high field Hall effect were studied over a broad temperature range in ferromagnetic Ga(1-x)Mn(x)As epitaxial layers (0.015
Magnetotransport and Domain Wall in Nanoconstriction of Ferromagnetic Semiconductor (Ga,Mn)As (2004)
Figielski, T., Wosinski, T., Pelya, O., Sadowski, J., Morawski, A., Makosa, A., ...
We studied magnetoresistance (MR) of nanoconstrictions created in (Ga,Mn)As epilayers by O+ ion implantation. Original layers exhibit a negative MR that is plausibly caused by weak localization (WL)...
MnAs overlayer on GaN(0001)-(1x1) - its growth, morphology and electronic structure (2004)
Kowalski, B. J., Kowalik, I. A., Iwanowski, R. J., Lusakowska, E., Sawicki, M., Sadowski, J., ...
Spontaneous formation of grains has been observed for the MnAs layer grown by means of MBE on the GaN(0001)-(1x1) surface. Electronic structure of the system was investigated in situ by resonant...
Kowalski, B. J., Kowalik, I. A., Iwanowski, R. J., Sadowski, J., Kanski, J., Orlowski, B. A., ...
The surface and electronic structure of MOCVD-grown layers of Ga(0.92)In(0.08)N have been investigated by means of photoemission. An additional feature at the valence band edge, which can be ascribed...
Post-growth annealing of GaMnAs under As capping - an alternative way to increase Tc (2004)
Adell, M., Stanciu, V., Kanski, J., Ilver, L., Sadowski, J., Domagala, J. Z., ...
We demonstrate that in situ post-growth annealing of GaMnAs layers under As capping is adequate for achieving high Curie temperatures (Tc) in a similar way as ex situ annealing in air or in N2...
Photoemission studies of the annealing induced modifications of (Ga,Mn)As (2004)
Adell, M., Ilver, L., Kanski, J., Sadowski, J., Mathieu, R.
Using angle resolved photoemission we have investigated annealing-induced changes in Ga(1-x)Mn(x)As with x = 0.05. We find that the position of the Fermi energy is a function of annealing time and...
Magnetic order in semiconducting, ferromagnetic Ga1-xMnxAs (2004)
Fedorych, O. M., Wilamowski, Z., Potemski, M., Byszewski, M., Sadowski, J.
Magnetic resonance studies allow us to distinguish paramagnetic, ferromagnetic and ferrimagnetic phases in Ga1-xMnxAs. The transition from ferromagnet to ferrimagnet is correlated with a metal to...
Influence of defects on the lattice constant of GaMnAs (2003)
We study the influence of main compensating defects: As antisites and Mn interstitials, known to occur in GaMnAs ferromagnetic semiconductor, on its structural properties. Our experimental results...
Hernandez, C., Terki, F., Charar, S., Sadowski, J., Maude, D., Stanciu, V., ...
Magnetotransport properties of GaMnAs single layers and InGaMnAs/InGaAs superlattice structures were investigated at temperatures from 4 K to 300 K and magnetic fields up to 23 T to study the...
Short-period GaMnAs/GaAs superlattices: optical and magnetic characterization (2003)
Szuszkiewicz, W., Dynowska, E., Ott, F., Hennion, B., Jouanne, M., Morhange, J.F., ...
Short-period GaMnAs/GaAs superlattices: optical and magnetic characterization (2003)
Szuszkiewicz, W., Dynowska, E., Ott, F., Hennion, B., Jouanne., M., Morhange, J.F., ...
Ferromagnetic GaMnAs/GaAs Superlattices - MBE Growth and Magnetic Properties (2003)
Sadowski, J., Mathieu, R., Svedlindh, P., Karlsteen, M., Kanski, J.
This paper presents the results of a study of the magnetic properties of Gallium Manganese Arsenide/Gallium Arsenide GaMnAs/GaAs) superlattices with magnetic GaMnAs layers of thickness between 8 and...
Magnetic order in GaMnAs layers (2003)
Fedorych, O., Wilamowski, Z., Potemski, M., Byszewski, M., Sadowski, J.
Magnetic resonance studies of the origin of ferromagnetism in Ga1-xMnxAs (2003)
Fedorych, O. M., Wilamowski, Z., Potemski, M., Byszewski, M., Sadowski, J.
Sorensen, B., Sadowski, J., Mathieu, R., Svedlindh, P., Lindelof, P. E.
We report a clear correspondence between changes in the Curie temperature and carrier density upon annealing in epitaxially grown (Ga,Mn)As layers with thicknesses in the range between 5 nm and 20...
Dependence of Curie Temperature on the Thickness of Epitaxial (Ga,Mn)As Film (2002)
Sorensen, B. S., Sadowski, J., Andresen, S. E., Lindelof, P. E.
We present the magnetotransport properties of very thin (5 to 15 nm) single (Ga,Mn)As layers grown by low temperature molecular beam epitaxy. A lower (Ga,Mn)As thickness limit of 5 nm for the...
Magnetization of ultrathin (Ga,Mn)As layers (2002)
Mathieu, R., Sørensen, B. S., Sadowski, J., Södervall, U., Kanski, J., Svedlindh, P., ...
Kerr rotation and Superconducting QUantum Interference Device (SQUID) magnetometry measurements were performed on ultrathin (Ga$_{0.95}$Mn$_{0.05}$)As layers. The thinner layers (below 250 \AA)...
Magnetic Properties of Short Period InGaMnAs/InGaAs Superlattices (2002)
Sadowski, J., Mathieu, R., Svedlindh, P., Kanski, J., Karlsteen, M., Swiatek, K., ...
We have observed a paramagnetic-to-ferromagnetic phase transition in short period InGaMnAs/InGaAs superlattices. The thicknesses of magnetic InGaMnAs layers in the structures studied was chosen to be...
Ferromagnetism and interlayer exchange coupling in short period (Ga,Mn)As/GaAs superlattices (2002)
Mathieu, R., Svedlindh, P., Sadowski, J., Swiatek, K., Karlsteen, M., Kanski, J., ...
Magnetic properties of (Ga,Mn)As/GaAs superlattices are investigated. The structures contain magnetic (Ga,Mn)As layers, separated by thin layers of non-magnetic GaAs spacer. The short period...
Ferromagnetic, ferrimagnetic and spin-wave resonances in GaMnAs layers (2002)
Fedorych, O., Byszewski, M., Wilamowski, Z., Potemski, M., Sadowski, J.
Molecular beam epitaxy grown Gal(1-x)Mn(x)As layers were investigated by means of magnetic resonances. With an increase in Mn concentration, x, the spectrum changes from the (i) paramagnetic one,...
Ferromagnetic GaMnAs/GaAs superlattices - MBE growth and magnetic properties (2002)
Sadowski, J., Mathieu, R., Svedlindh, P., Karlsteen, M., Kanski, J., Fu, Y., ...
We have studied the magnetic properties of (GaMnAs)(m)(GaAs)(n) superlattices with magnetic GaMnAs layers of thickness between eight and 16 molecular layers (ML) (23-45 Angstrom), and with...
Photoemission studies of Ga$_{1-x}$Mn$_{x}$As: Mn-concentration dependent properties (2001)
Asklund, H., Ilver, L., Kanski, J., Sadowski, J., Mathieu, R.
Using angle-resolved photoemission, we have investigated the development of the electronic structure and the Fermi level pinnning in Ga$_{1-x}$Mn$_{x}$As with Mn concentrations in the range 1--6%. We...
Ferromagnetic GaMnAs/GaAs superlattices - MBE growth and magnetic properties (2001)
Sadowski, J., Mathieu, R., Svedlindh, P., Karlsteen, M., Kanski, J., Fu, Y., ...
We have studied the magnetic properties of (GaMnAs)m/(GaAs)n superlattices with magnetic GaMnAs layers of thickness between 8 and 16 molecular layers (ML) (23-45 \AA), and with nonmagnetic GaAs...
Single ion anisotropy of Mn doped GaAs measured by EPR (2001)
Fedorych, O. M., Hankiewicz, E. M., Wilamowski, Z., Sadowski, J.
Electron paramagnetic resonance (EPR) study of MBE grown Mn doped GaAs is presented. The resolved fine structure allows us to evaluate the crystal field parameters of the spin Hamiltonian. The...
Sadowski, J., Mathieu, R., Svedlindh, P., Domagala, J. Z., Swiatek, K., ...
We have grown the ferromagnetic semiconductor GaMnAs containing up to 10% Mn by migration enhanced epitaxy at a substrate temperature of 150^oC. The alternate supply of As2 molecules and Ga and Mn...
Dobrowolski, L, Kompanowska-Jezierska, E, Sadowski, J
1. Modulation of the cortico-papillary electrolyte gradient by prostaglandins (PG) was studied in the kidney of anaesthetized rats. The intrarenal PG activity was varied by synthesis blockade with...
Badzyńska, B, Sadowski, J, Dobrowolski, L
1. Effects of synthetic atrial natriuretic peptide (ANP) on renal excretion, total renal blood flow (RBF), glomerular filtration rate (GFR) and tissue electrical admittance (reciprocal impedance, an...
Antidiuretic action of intravenous and intracerebral pyrogen in conscious rabbits.
1. In conscious rabbits an i.v. infusion of 30 or 60 microgram E. coli pyrogen/kg body wt. decreased urine flow from control of 1.13 +/- 0.11 (S.E. of mean) ml./min to 0.43 +/- 0.09 ml./min while...
Quiros, C F, Grellet, F, Sadowski, J, Suzuki, T, Li, G, Wroblewski, T
The region corresponding to the ABI1-Rps2-Ck1 segment on chromosome 4 of Arabidopsis thaliana was sequenced in Brassica oleracea. Similar to A. thaliana, the B. oleracea homolog BoRps2 is present in...
Bagnall, NM, Dent, PC, Walkowska, A, Sadowski, J, Johns, EJ
The contribution of nitric oxide (NO) to the antinatriuresis and antidiuresis caused by low-level electrical stimulation of the renal sympathetic nerves (RNS) was investigated in rats anaesthetized...
Dobrowolski, L, Kompanowska-Jezierska, E, Sadowski, J
1. Modulation of the cortico-papillary electrolyte gradient by prostaglandins (PG) was studied in the kidney of anaesthetized rats. The intrarenal PG activity was varied by synthesis blockade with...
Badzyńska, B, Sadowski, J, Dobrowolski, L
1. Effects of synthetic atrial natriuretic peptide (ANP) on renal excretion, total renal blood flow (RBF), glomerular filtration rate (GFR) and tissue electrical admittance (reciprocal impedance, an...
Antidiuretic action of intravenous and intracerebral pyrogen in conscious rabbits.
1. In conscious rabbits an i.v. infusion of 30 or 60 microgram E. coli pyrogen/kg body wt. decreased urine flow from control of 1.13 +/- 0.11 (S.E. of mean) ml./min to 0.43 +/- 0.09 ml./min while...
Quiros, C F, Grellet, F, Sadowski, J, Suzuki, T, Li, G, Wroblewski, T
The region corresponding to the ABI1-Rps2-Ck1 segment on chromosome 4 of Arabidopsis thaliana was sequenced in Brassica oleracea. Similar to A. thaliana, the B. oleracea homolog BoRps2 is present in...
Bagnall, NM, Dent, PC, Walkowska, A, Sadowski, J, Johns, EJ
The contribution of nitric oxide (NO) to the antinatriuresis and antidiuresis caused by low-level electrical stimulation of the renal sympathetic nerves (RNS) was investigated in rats anaesthetized...
Influence of Mn nanoinclusions on magnetic properties of MBE grown GaMnAs 2006-09-07 - 2006-09-09
I.N. Demchenko, K. Lawniczak-Jablonska, J. Domagala, A. Wolska, ...
Poster
I.N. Demchenko, K. Lawniczak-Jablonska, J. Domagala, J. Sadowski, ...
Poster
XAFS studies of the local structure of Mn doped magnetic semiconductors 2006-06-19 - 2006-06-23
I.N. Demchenko, K. Lawniczak-Jablonska, J. Domagala, J. Sadowski, ...
Poster
A. Wolska, I.N. Demchenko, K. Lawniczak-Jablonska, M. Klepka, ...
Poster
Effect of Annealing on Defect Structure of GaMnAs and Si:Mn 2007-06-17 - 2007-06-22
J. Bak-Misiuk, E. Dynowska, A. Misiuk, P. Romanowski, ...
Poster
Location of Mn atoms in GaAs: X-ray absorption spectroscopy 2007-06-09 - 2007-06-15
I.N. Demchenko, K. Lawniczak-Jablonska, R. Jakiela, J.Z. Domagala, ...
Poster
Atomic order of magnetic inclusion in semiconductors 2007-09-01 - 2007-09-06
K. Lawniczak-Jablonska, I. Demchenko, A. Wolska, J. Sadowski, ...
Conference presentation
Effect of High Pressure Annealing on Defect Structure of GaMnAs 2007-09-17 - 2007-09-21
P. Romanowski, J. Bak-Misiuk, E. Dynowska, A. Misiuk, ...
Poster
Effect of Annealing on Creation of Nanoclusters in GaMnAs 2007-09-24 - 2007-09-26
J. Bak-Misiuk, P. Romanowski, E. Dynowska, J.Z. Domagala, ...
Poster
A. Wolska, K. Lawniczak-Jablonska, M. Klepka, I.N. Demchenko, ...
Poster
J. Bak-Misiuk, P. Romanowski, E. Lusakowska, J. Domagala, ...
Conference presentation