He, J., Sapriel, J., Chavignon, J., Azoulay, R., Dugrand, L., Mollot, F., ...
Direct acoustic modes (Brillouin lines) as well as folded acoustic modes at frequencies higher and lower than the Brillouin lines are simultaneously observed. Both LA and TA polarizations are...
Rao, E., Brillouet, F., Ossart, P., Gao, Y., Sapriel, J., Krauz, P.
The influence of implant damage, seperated from impurity change associated effects, has been investigated on Al/Ga interdiffusion. Implants of electrically inactive isoelectronic elements 31P+ and...
He, J., Sapriel, J., Chavignon, J., Azoulay, R., Dugrand, L., Mollot, F., ...
Direct acoustic modes (Brillouin lines) as well as folded acoustic modes at frequencies higher and lower than the Brillouin lines are simultaneously observed. Both LA and TA polarizations are...
Rao, E., Brillouet, F., Ossart, P., Gao, Y., Sapriel, J., Krauz, P.
The influence of implant damage, seperated from impurity change associated effects, has been investigated on Al/Ga interdiffusion. Implants of electrically inactive isoelectronic elements 31P+ and...
He, J., Sapriel, J., Chavignon, J., Azoulay, R., Dugrand, L., Mollot, F., ...
Direct acoustic modes (Brillouin lines) as well as folded acoustic modes at frequencies higher and lower than the Brillouin lines are simultaneously observed. Both LA and TA polarizations are...
Rao, E., Brillouet, F., Ossart, P., Gao, Y., Sapriel, J., Krauz, P.
The influence of implant damage, seperated from impurity change associated effects, has been investigated on Al/Ga interdiffusion. Implants of electrically inactive isoelectronic elements 31P+ and...
ACOUSTIC MODES IN Ga1-xAlxAs CRYSTALS AND RELATED SUPERLATTICES (1984)
Sapriel, J., Michel, J., Toledano, J., Vacher, R.
This is a parallel study of Brillouin and Raman scattering. The additional Raman modes in the superlattices can be interpreted as due to an acousto-optical interaction with phonons of different...
RAMAN VIBRATIONAL STUDIES OF TRANSIENT ANNEALING OF GaAs AMORPHOUS THIN FILMS (1984)
Sapriel, J., Nissim, Y., Joukoff, B., Oudar, J., Abraham, S., Beserman, R.
A nanosecond pulsed ruby laser, a picosecond pulsed Nd-YAG laser and a set of halogen lamps are used to induce the reconstruction of the damage layer obtained by high dose ion implantation in single...
ACOUSTIC MODES IN Ga1-xAlxAs CRYSTALS AND RELATED SUPERLATTICES (1984)
Sapriel, J., Michel, J., Toledano, J., Vacher, R.
This is a parallel study of Brillouin and Raman scattering. The additional Raman modes in the superlattices can be interpreted as due to an acousto-optical interaction with phonons of different...
RAMAN VIBRATIONAL STUDIES OF TRANSIENT ANNEALING OF GaAs AMORPHOUS THIN FILMS (1984)
Sapriel, J., Nissim, Y., Joukoff, B., Oudar, J., Abraham, S., Beserman, R.
A nanosecond pulsed ruby laser, a picosecond pulsed Nd-YAG laser and a set of halogen lamps are used to induce the reconstruction of the damage layer obtained by high dose ion implantation in single...
ACOUSTIC MODES IN Ga1-xAlxAs CRYSTALS AND RELATED SUPERLATTICES (1984)
Sapriel, J., Michel, J., Toledano, J., Vacher, R.
This is a parallel study of Brillouin and Raman scattering. The additional Raman modes in the superlattices can be interpreted as due to an acousto-optical interaction with phonons of different...
RAMAN VIBRATIONAL STUDIES OF TRANSIENT ANNEALING OF GaAs AMORPHOUS THIN FILMS (1984)
Sapriel, J., Nissim, Y., Joukoff, B., Oudar, J., Abraham, S., Beserman, R.
A nanosecond pulsed ruby laser, a picosecond pulsed Nd-YAG laser and a set of halogen lamps are used to induce the reconstruction of the damage layer obtained by high dose ion implantation in single...
ANNEALING OF HIGH DOSE IMPLANTED GaAs WITH HALOGEN LAMPS (1983)
Nissim, Y., Joukoff, B., Sapriel, J., Duhamel, N.
The use of radiation from two halogene lamps to anneal implanted GaAs has been studied. Contact protection of the substrate is obtained by mounting it in a sandwich configuration between a silicon...
Sapriel, J., Nissim, Y., Oudar, J.
The transformation of implanted amorphous Si and GaAs induced by a single pulse of a picosecond laser is studied. In both materials a clear multiannular pattern was produced by the irradiation. The...
ANNEALING OF HIGH DOSE IMPLANTED GaAs WITH HALOGEN LAMPS (1983)
Nissim, Y., Joukoff, B., Sapriel, J., Duhamel, N.
The use of radiation from two halogene lamps to anneal implanted GaAs has been studied. Contact protection of the substrate is obtained by mounting it in a sandwich configuration between a silicon...
Sapriel, J., Nissim, Y., Oudar, J.
The transformation of implanted amorphous Si and GaAs induced by a single pulse of a picosecond laser is studied. In both materials a clear multiannular pattern was produced by the irradiation. The...
ANNEALING OF HIGH DOSE IMPLANTED GaAs WITH HALOGEN LAMPS (1983)
Nissim, Y., Joukoff, B., Sapriel, J., Duhamel, N.
The use of radiation from two halogene lamps to anneal implanted GaAs has been studied. Contact protection of the substrate is obtained by mounting it in a sandwich configuration between a silicon...
Sapriel, J., Nissim, Y., Oudar, J.
The transformation of implanted amorphous Si and GaAs induced by a single pulse of a picosecond laser is studied. In both materials a clear multiannular pattern was produced by the irradiation. The...
RAMAN STUDY OF THE ANHARMONICITY AND DISORDER-INDUCED EFFECTS IN Ga1-xAlxAs (1981)
Jusserand, B., Sapriel, J., Alexandre, F., Delpech, P.
Raman measurements of the frequency shift and profile variations versus temperature are interpreted in terms of anharmonicity and disorder. Several disorder activated longitudinal and transverse...
RAMAN STUDY OF THE ANHARMONICITY AND DISORDER-INDUCED EFFECTS IN Ga1-xAlxAs (1981)
Jusserand, B., Sapriel, J., Alexandre, F., Delpech, P.
Raman measurements of the frequency shift and profile variations versus temperature are interpreted in terms of anharmonicity and disorder. Several disorder activated longitudinal and transverse...
RAMAN STUDY OF THE ANHARMONICITY AND DISORDER-INDUCED EFFECTS IN Ga1-xAlxAs (1981)
Jusserand, B., Sapriel, J., Alexandre, F., Delpech, P.
Raman measurements of the frequency shift and profile variations versus temperature are interpreted in terms of anharmonicity and disorder. Several disorder activated longitudinal and transverse...
PROPRIÉTÉS ACOUSTIQUES ET ACOUSTOOPTIQUES DU SOUFRE α (1972)
Sapriel, J., Rivoallan, L., Ribet, J.
Les propriétés acoustiques (constantes élastiques, atténuations ultrasonores) ainsi que les propriétés acoustooptiques (facteurs de mérite, constantes photo-élastiques) ont été...
Réalisation de déflecteurs acousto-optiques composites à grande capacité (1972)
La constitution de déflecteurs acousto-optiques utilisant un seul transducteur ne permet pas de tirer parti de toute la bande acoustique disponible du matériau d'interaction. En vue d'augmenter la...
PROPRIÉTÉS ACOUSTIQUES ET ACOUSTOOPTIQUES DU SOUFRE α (1972)
Sapriel, J., Rivoallan, L., Ribet, J.
Les propriétés acoustiques (constantes élastiques, atténuations ultrasonores) ainsi que les propriétés acoustooptiques (facteurs de mérite, constantes photo-élastiques) ont été...
Réalisation de déflecteurs acousto-optiques composites à grande capacité (1972)
La constitution de déflecteurs acousto-optiques utilisant un seul transducteur ne permet pas de tirer parti de toute la bande acoustique disponible du matériau d'interaction. En vue d'augmenter la...
PROPRIÉTÉS ACOUSTIQUES ET ACOUSTOOPTIQUES DU SOUFRE α (1972)
Sapriel, J., Rivoallan, L., Ribet, J.
Les propriétés acoustiques (constantes élastiques, atténuations ultrasonores) ainsi que les propriétés acoustooptiques (facteurs de mérite, constantes photo-élastiques) ont été...
Réalisation de déflecteurs acousto-optiques composites à grande capacité (1972)
La constitution de déflecteurs acousto-optiques utilisant un seul transducteur ne permet pas de tirer parti de toute la bande acoustique disponible du matériau d'interaction. En vue d'augmenter la...