Moisture resistance of SU-8 and KMPR as structural material (2009)
Blanco Carballo, V.M., Melai, J., Salm, C., Schmitz, J.
This paper treats the moisture resistance of SU-8 and KMPR, two photoresists considered as structural material in microsystems. Our experiments focus on the moisture resistance of newly developed...
On the Trade-Off Between Quality Factor and Tuning Ratio in Tunable High-Frequency Capacitors (2009)
Tiggelman, M.P.J., Reimann, K., Van Rijs, F., Schmitz, J., Hueting, R.J.E.
A benchmark of tunable and switchable devices at microwave frequencies is presented on the basis of physical limitations to show their potential for reconfigurable cellular applications. Performance...
Extracting Energy Band Offsets on Long-Channel Thin Silicon-on-Insulator MOSFETs (2009)
Structural quantum confinement in long-channel thin silicon-on-insulator MOSFETs has been quantified using the temperature dependence of the subthreshold current. The results were compared with the...
Low-temperature fabricated TFTs on polysilicon stripes (2009)
Brunets, I., Holleman, J., Kovalgin, A.Y., Boogaard, A., Schmitz, J.
This paper presents a novel approach to make highperformance CMOS at low temperatures. Fully functional devices are manufactured using back-end compatible substrate temperatures after the deposition...
GEMGrid: a wafer post-processed GEM-like radiation detector (2009)
Blanco Carballo, V.M., Bilevych, Y., Chefdeville, M.A., Fransen, M., Salm, C., ...
This paper presents a new wafer post-processed micropatterned gaseous radiation detector called GEMGrid.The device consists of a GEM-like structure fabricated with SU-8 photo resist directly on top...
InAs/GaSb superlattice focal plane array infrared detectors: Manufacturing aspects (2009)
Rutz, F., Rehm, R., Schmitz, J., Fleissner, J., Walther, M., Scheibner, R., ...
InAs/GaSb type-II short-period superlattice (SL) photodiodes have been shown to be very promising for 2nd and 3rd generation thermal imaging systems with excellent detector performance. A multi-wafer...
Advanced III/V quantum-structure devices for high performance infrared focal plane arrays (2009)
Rehm, R., Walther, M., Schmitz, J., Rutz, F., Fleißner, J., Scheibner, R., ...
A mature production technology for Quantum Well Infrared Photodetector (QWIP) focal plane arrays (FPAs) and InAs/GaSb superlattice (SL) FPAs has been developed. Dual-band and dual-color QWIP- and...
InAs/GaSb superlattices for advanced infrared focal plane arrays (2009)
Rehm, R., Walther, M., Schmitz, J., Rutz, F., Fleissner, J., Scheibner, R., ...
We report on the development of high performance focal plane arrays for the mid-wavelength infrared spectral range from 3S5 lm (MWIR) on the basis of InAs/GaSb superlattice photodiodes. An...
RF CMOS reliability simulations (2008)
Sasse, Guido T., Acar, Mustafa, Kuper, Fred G., Schmitz, J.
We present a simulation approach to assess the reliability of an RF CMOS circuit under user conditions, based on existing DC degradation models for gate-oxide breakdown and hot-carrier degradation....
Extracting energy band offsets on Thin Silicon–On–Insulator MOSFETs (2008)
Structural quantum confinement in thin silicon double-gate MOSFETs has been quantified using the temperature dependence of the subthreshold current. The results were compared with the shifts in...
Energy band offset extraction – a comparative study – (2008)
Structural quantum confinement in thin silicon double-gate MOSFETs has been quantified using the temperature dependence of the subthreshold current. The results were compared with the shifts in...
New results from GridPix detectors (2008)
Bilevych, Y., Blanco Carballo, V.M., Chefdeville, M., Fransen, M., Groot De, N., ...
GridPix detector prototypes have been made using a TimePix pixel chip and a PSI 46 pixel chip. A system of discharge protection has been successfully tested. GridPix detectors have been tested using...
Valence Band Offset Measurements on Thin Silicon-on-Insulator MOSFETs (2007)
Hueting, R.J.E., Smit, G.D.J., Hoang, T., Holleman, J., Schmitz, J.
The effect of quantum confinement in thin siliconon-insulator double-gate MOSFETs has been directly determined from subthreshold current measurements for the first time. By comparing...
Dimensional scaling effects on transport properties of p-i-n diodes (2007)
Rajasekharan, B., Salm, C., Hueting, R.J.E., Hoang, T., Wiel Van Der, W.G., Schmitz, J.
Device scaling has been a subject of research for both optoelectronics and electronics. In order to investigate the electronic properties of scaled devices we characterized lateral p-i-n structures...
Band Offset Measurements on Ultra-Thin (100) SOI MOSFETs (2007)
Hueting, R.J.E., Smit, G.D.J., Hoang, T., Holleman, J., Schmitz, J.
This work shows experimental evidence of structural quantum confinement showing up in the electrical device characteristics through a widening of the band gap. In this work, subthreshold currents in...
Direct readout of gaseous detectors with tiled CMOS circuits (2007)
Visschers, J.L., Blanco Carballo, V.M., Chefdeville, M., Colas, P., Schmitz, J., ...
A coordinated design effort is underway, exploring the three-dimensional direct readout of gaseous detectors by an anode plate equipped with a tiled array of many CMOS pixel readout ASICs, having...
On the geometrical design of integrated micromegas detectors (2007)
Blanco Carballo, V.M., Salm, C., Smits, S.M., Schmitz, J., Chefdeville, M., ...
This paper presents the operational characteristics of several integrated Micromegas detectors. These detectors called InGrids are made by means of micro-electronic fabrication techniques. These...
An integrated single photon detector array using porous anodic alumina (2006)
Melai, J., Salm, C., Schmitz, J., Smits, S.M., Visschers, J.L.
The aim of the work is fabrication of a photon detector array made using IC compatible wafer-scale post-processing stepts. Plans will be presented to outline these fabrication steps. The detector...
A miniaturized multiwire proportional chamber using CMOS wafer scale post-processing (2006)
Blanco Carballo, V.M., Chefdeville, M., Salm, C., Aarnink, A.A.I., Smits, S.M., ...
This paper presents the technology of a new microsystem consisting of a CMOS chip with integrated high voltage electrodes, to be used as a detector for ionizing radiation. Its application ranges from...
Reduced temperature dependence of hot carrier degradation in deuterated nMOSFETs (2006)
Salm, C., Hof, A.J., Kuper, F.G., Schmitz, J.
Deuterated oxides exhibit prolonged hot carrier lifetimes at room temperature. We report evidence that this improved hot carrier hardness exists over the temperature range between -25 °C and 200...
An integrated gaseous detector using microfabrication post-processing technology (2006)
Blanco Carballo, V.M., Salm, C., Smits, S.M., Schmitz, J., Chefdeville, M., ...
this paper presents the operational characteristics of several integrated Micromegas detectors. These detectors called InGrids are made by means of micro-electronic fabrication techniques. These...
An integrated single photon detector array using porous anodic alumina (2006)
Melai, J., Salm, C., Schmitz, J., Smits, S.M., Visschers, J.L.
Abstract—This paper outlines a single photon sensitive detector array. The detector structure is made via CMOS compatible wafer-scale post-processing. The total system comprises a CMOS imaging chip...
On the Oxidation Kinetics of Silicon in Ultradiluted H2O and D2O Ambient (2005)
Hof, A.J., Kovalgin, A.Y., Woerlee, P.H., Schmitz, J.
This work presents a wide range of growth rate data of thin (1-60 nm) silicon oxides grown in an ultradiluted ambient of H2O or D2O in the temperature range 750-950 °C. A considerable and constant...
An electron-multiplying ‘Micromegas’ grid made in silicon wafer post-processing technology (2005)
Chefdeville, M.A., Colas, P., Giomataris, Y., Heijne, E.H.M., ...
A technology for manufacturing an aluminium grid onto a silicon wafer has been developed. The grid is fixed parallel and precisely to the wafer (anode) surface at a distance of 50 mm by means of...
Campbell, M., Heijne, E.H.M., Llopart, X., Colas, P., Giganon, A., Giomataris, Y., ...
A small TPC has been read out by means of a Medipix2 chip as direct anode. A Micromegas foil was placed 50 mm above the chip, and electron multiplication occurred in the gap. With a He/isobutane...
Charge pumping at radio frequencies [MOSFET device interface state density measurement] (2005)
Sasse, G.T., De Vries, H., Schmitz, J.
In this work, for the first time, charge pump results are shown that are obtained at frequencies in the GHz range. A comparison is made with charge pump results at lower frequencies. A very good...
A high efficiency lateral light emitting device on SOI (2005)
Hoang, T., Le Minh, P., Holleman, J., Zieren, V., Goossens, M.J., Schmitz, J.
The infrared light emission of lateral p/sup +/-p-n/sup +/ diodes realized on SIMOX-SOI (separation by implantation of oxygen - silicon on insulator) substrates has been studied. The confinement of...
The effect of dislocation loops on the light emission of silicon LEDs (2005)
Hoang, T., Le Minh, P., Holleman, J., Schmitz, J.
Recently, different and apparently contradicting results were published regarding the influence of crystal defects on the light emission efficiency of silicon LEDs at room temperature [1-6]. In this...
Campbell, M., Chefdeville, M.A., Colas, P., Colijn, A.P., Forniani, A., Giomataris, Y., ...
A small drift chamber was read out by means of a MediPix2 readout chip as a direct anode. A Micromegas foil was placed 50micrometer above the chip, and electron multiplication occurred in the gap....
Sturm, J.M., Zinine, A., Wormeester, H., Poelsema, B., Bankras, R.G., Holleman, J., ...
Ultrathin 2.5 nm high-k aluminum oxide (Al2O3) films on p-type silicon (001) deposited by atomic layer deposition (ALD) were investigated with noncontact atomic force microscopy (NC-AFM) in ultrahigh...
Forniani, A., Campbell, M., Chefdeville, M.A., Colas, P., Colijn, A.P., ...
By placing a Micromegas gas gain grid on top of a CMOS pixel readout circuit (MediPix2), we developed a device which acts as a pixel-segmented direct anode in gas-filled detectors. With a...
Sturm, J.M., Zinine, A., Wormeester, H., Bankras, R.G., Holleman, J., Schmitz, J., ...
Fixed oxide charges in atomic layer deposited (ALD) Al2O3 on hydrogen-terminated Si were observed by ultra-high vacuum (UHV) non-contact AFM with a conductive tip. Comparison of bias-dependent images...
An approach to modeling of silicon oxidation in a wet ultra-diluted ambient (2005)
Kovalgin, A.Y., Hof, A.J., Schmitz, J.
In this work, we make steps towards developing a new wet-oxidation model of silicon based on electron-stimulated dissociation of H2O molecules. The need for a new model arises from the fact that...
On the oxidation kinetics of silicon in ultradiluted H2O and D2O ambient (2005)
Hof, A.J., Kovalgin, A.Y., Woerlee, P.H., Schmitz, J.
This work presents a wide range of growth rate data of thin (1-60 nm) silicon oxides grown in an ultradiluted ambient of H2O or D2O in the temperature range 750-950
The impact of deuterated CMOS processing on gate oxide reliability (2005)
Hof, A.J., Hoekstra, E., Kovalgin, A.Y., Van Schaijk, R., Baks, W.M., Schmitz, J.
In recent literature, a controversy has arisen over the question whether deuterium improves the stability of the MOS gate dielectric. In particular, the influence of deuterium incorporation on the...
Kolhatkar, J.S., Hoekstra, E., Hof, A.J., Salm, C., Schmitz, J., Wallinga, H.
This letter reports the diagnostic power of the low-frequency noise analysis (steady-state and periodic large-signal excitation) in MOSFETs subjected to hot-carrier degradation. The LF noise under...
Sturm, J.M., Zinine, A.I., Wormeester, H., Poelsema, B., Bankras, R.G., Holleman, J., ...
Kelvin probe force microscopy in ultrahigh vacuum was used to study inhomogeneities of the contact potential difference (CPD) and differential capacitance of thin atomic layer deposited Al2O3 films....
Aarnink, A.A.I., Boogaard, A., Brunets, I., Isai, I.G., Kovalgin, A.Y., Holleman, J., ...
We recently built an Inductively-Coupled Remote Plasma-Enhanced Chemical Vapor Deposition (ICPECVD) system for deposition of dielectric and semi-conducting layers at low substrate temperatures (~150
Three-dimensional IC's prolong the life of Moore's law (2005)
Brunets, I., Boogaard, A., Isai, I.G., Aarnink, A.A.I., Kovalgin, A.Y., Holleman, J., ...
In this work we make steps forwards developing a low-temperature technology intended for the fabrication of 3-D structures. Several technology steps like low-temperature deposition of semiconductor...
In-Situ RHEED analysis of atomic layer deposition (2005)
Bankras, R.G., Holleman, J., Schmitz, J.
Recent efforts on growth modeling of the atomic layer deposition process emphasized the need of an accurate understanding of the process, especially for the initial stage of the deposition. This...
An electron-multiplying 'Micromegas' grid made in silicon wafer post-processing technology (2005)
Chefdeville, M.A., Colas, P., Giomataris, Y., Heijne, E.H.M., ...
A technology for manufacturing an aluminium grid onto a silicon wafer has been developed. The grid is fixed parallel and precisely to the wafer (anode) surface at a distance of 50 μm by means of...
Characterization of dielectric charging in RF MEMS (2005)
Herfst, R.W., Huizing, H.G.A., Steeneken, P.G., Schmitz, J.
Capacitive RF MEMS switches show great promise for use in wireless communication devices such as mobile phones, but the successful application of these switches is hindered by the reliability of the...
The effect of an electric field on a lateral silicon light-emitting diode (2005)
Le Minh, P., Hoang, T., Holleman, J., Schmitz, J.
In this paper, we investigate lateral p+pn+ silicon diodes fabricated on Silicon-On-Insulator. This device distinguishes itself from previous devices by an extra poly-silicon gate electrode on top of...
The RF charge pump technique for measuring the interface state density on leaky dielectrics (2005)
Sasse, G.T., De Vries, H., Schmitz, J.
In this work the RF charge pump technique is presented. It is shown that this technique can rovide charge pump data of devices that have a leakage current too high for classical charge pump...
Specific contact resistance measurements of metal-semiconductor junctions (2005)
Stavitski, N., Wolters, R.A.M., Kovalgin, A.Y., Schmitz, J.
Our research comprises the manufacturing of test structures to characterize the metal-semiconductor junctions with a number of techniques and materials. An extensive subsequent physical and...
Tunable laser diode system for noninvasive blood glucose measurements (2005)
Olesberg, J., Arnold, M., Mermelstein, C., Schmitz, J., Wagner, J.
Tight control of blood glucose levels has been shown to dramatically reduce the long-term complications of diabetes. Current invasive technology for monitoring glucose levels is effective but...
Leakage current correction in quasi-static C-V measurements (2004)
Schmitz, J., Weusthof, M.H.H., Hof, A.J.
The gate current in a MOS structure can deform the result of a quasi-static capacitance-voltage measurement. In this paper, several correction methods are presented and discussed to compensate for...
Gate-capacitance extraction from RF C-V measurements (2004)
Sasse, G.T., De Kort, R., Schmitz, J.
n this work, a full two-port analysis of an RF C-V measurement set-up is given. This two-port analysis gives insight on the limitations of the commonly used gate capacitance extraction, based on the...
Gate oxide reliability and deuterated CMOS processing (2004)
Hof, A.J., Kovalgin, A.Y., Van Schaijk, R., Baks, W.M., Schmitz, J.
In recent literature, a controversy has arisen over the question whether deuterium improves the stability of the MOS gate dielectric. It appears as if this controversy finds its origin in the...
New gaseous detectors: the application of CMOS pixel chips as direct anode (2004)
Campbell, M., Heijne, E.H.M., Llopart, X., Chefdeville, M.A., Colas, P., Giganon, A., ...
A small Time Projection Chamber (TPC) has been read out by means of a Medipix2 readout chip as direct anode. A Micromegas foil was placed 50 μm above the chip, and electron multiplication occurred...
Modeling of RTS Noise in MOSFETs under Steady-State and Large-Signal Excitation (2004)
Kolhatkar, J.S., Hoekstra, E., Salm, C., Van Der Wel, A.P., Klumperink, E.A.M., Schmitz, J., ...
The behavior of RTS noise in MOSFETs under large-signal excitation is experimentally studied. Our measurements show a significant transient effect, in line with earlier reports. We present a new...
Test structures design considerations for RF-CV measurements on leaky dielectrics (2004)
Schmitz, J., Cubaynes, F.N., Havens, R.J., De Kort, R., Scholten, A.J., Tiemeijer, L.F.
We present an MOS capacitance-voltage measurement methodology that, contrary to present methods, is highly robust against gate leakage current densities up to 1000 A/cm/sup 2/. The methodology...
The RF-CV method for characterization of leaky gate dielectrics (2004)
Schmitz, J., Cubaynes, F.N., De Kort, R., Havens, R.J., Scholten, A.J., Tiemeijer, L.F.
This paper presents a new method, developed for the capacitancevoltage (CV) characterization of leaky dielectrics. The method comprises measurements in the gigahertz range on specially designed...
Colas, P., Colijn, A.P., Forniani, A., Giomataris, Y., Heijne, E.H.M., ...
We have applied the Medipix2 pixel CMOS chip as direct anode readout for a TPC. For the gas ampli?cation two options have been investigated: (i) a three-stage GEM system and (ii) a Micromegas mesh....
The RF-CV method for characterization of leaky gate dielectrics (2004)
Schmitz, J., Cubaynes, F.N., De Kort, R., Havens, R.J., Scholten, A.J., Tiemeijer, L.F.
This paper presents a new method, developed for the capacitancevoltage (CV ) characterization of leaky dielectrics. The method comprises measurements in the gigahertz range on specially designed...
Test structure design considerations for RF-CV measurements on leaky dielectrics (2003)
Schmitz, J., Cubaynes, F.N., Havens, R.J., De Kort, R., Scholten, A.J., Tiemeijer, L.F.
We present a MOS capacitance-voltage measurement methodology that, contrary to present methods, is highly robust against gate leakage current densities up to 1000 A/cm/sup 2/. The methodology...
RF capacitance-voltage characterization of MOSFETs with high-leakage dielectric (2003)
Schmitz, J., Cubaynes, F.N., Havens, R.J., De Kort, R., Scholten, A.J., Tiemeijer, L.F.
We present a MOS Capacitance-Voltage measurement methodology that, contrary to present methods, is highly robust against gate leakage current densities up to 1000 A/cm/sup 2/. The methodology...
Bankras, R.G., Aarnink, A.A.I., Holleman, J., Schmitz, J.
A new custom designed reactor was realized at the MESA+ cleanroom to fabricate high-k dielectrics using atomic layer deposition (ALD). Key features of the reactor are: a small reactor volume, in-situ...
Hoang, T., Le Minh, P., Holleman, J., Schmitz, J., Wallinga, H.
The infrared light emission of the lateral P-I-N diodes fabricated on SIMOX SOI (Separation by Implanted OXygen Silicon On Insulator) substrates show a high external quantum efficiency of around...
On oxidation kinetics and electrical quality of gate oxide grown in H2O or D2O ambient (2003)
Hof, A.J., Kovalgin, A.Y., Woerlee, P.H., Schmitz, J.
In recent literature, a controversy has arisen over the question whether deuterium improves the stability of the MOS gate dielectric. This work presents a wide range of growth rate data of H2O and...
Plasma nitridation optimization for sub-15 A gate dielectrics (2003)
Cubaynes, F.N., Schmitz, J., Snijders, J.H.M., Veloso, A., Rothschild, A., ...
The work investigates the impact of plasma nitridation process parameters upon the physical properties and upon the electrical performance of sub-15 A plasma nitrided gate dielectrics. The nitrogen...
Seta, N, Barrot, S, Chabrol, B, Drouin, V, Gabriel, B M, ...
INTRODUCTION: Congenital disorders of glycosylation (CDG), or carbohydrate deficient glycoprotein syndromes, form a new group of multisystem disorders characterised by defective glycoprotein...
Schmitz, J, Herres, N, Fuchs, F, Serries, D, Grietens, B, ...
The structural properties of InAs/(GaIn)Sb and (InGa)As/GaSb superlattices (SLs), grown by solid-source molecular-beam epitaxy on (0 0 1) GaAs substrates using a strain relaxed GaSb or InAs buffer...
Exposition durch Radon/Radon-Folgeprodukte in Wasserwerken. (1998)
Radioaktivität in Mensch und Umwelt : 30.Jahrestagung des Fachverbandes für Strahlenschutz, Lindau, 28.September - 2.Oktober 1998
Radon an Arbeitsplätzen. Praxisorientierte Erfassung und Bewertung. (1998)
Radon-Statusgespräch 1998, Neuherberg, 18./19.Mai 1998 : Festveranstaltung zum 70.Geburtstag von Prof.Dr.W.Jacobi
Wissenschaftliche Berichte, FZKA-5768B (März 96)
Wissenschaftliche Berichte, FZKA-5769B (März 96)
Wissenschaftliche Berichte, FZKA-5770B (März 96)
Czarwinski, R., Schmitz, J., Schwedt, J., Ullmann, W.
Strahlenschutzpraxis, 2(1996) Nr.3, S.11-16
Strahlenexposition durch Radon am Arbeitsplatz. (1995)
Nachrichten - Forschungszentrum Karlsruhe, 27(1995) S.117-27
Inventory of ancient mining dumps in Baden-Württemberg, FRG. (1995)
Fritsche, R., Nöltner, Th., Schmitz, J.
Van den Brink, W.J. [Hrsg.]
Identification of the radon distribution at the BEH-minerals plant, Ipoh, Malaysia. (1994)
Rajah, S.S. [Hrsg.]
Winter, M. [Hrsg.]
1st Internat.Workshop on Indoor Radon Remedial Action, the Scientific Basis and the Practical Implications, Rimini, I, June 27 - July 2, 1993
Radon exposure at workplaces. Final report of a survey in German balneotherapy. (1993)
Austrian-Italian-Hungarian Radiation Protection Symp., Radiation Protection in Neighbouring Countries in Central Europe, Obergurgl, April 28-30, 1993
Radon Impact at Underground Workplaces in Western Germany (1992)
Radon survey measurements were performed at workplaces not covered by the Radiation Protection Ordinance, i.e. in production mines and caves and show mines open to visitors, underground power...
Urban, M., Schmitz, J., Keifer, H.
The determination of the long-term dispersion of radon from large area sources is quite simple if a great number of passive radon dosemeters is used for the measurement integrating over rather long...
Langfristige Radonausbreitung aus Grossquellen und deren messtechnische Erfassung. (1991)
Schmitz, J., Urban, M., Kiefer, H.
Voelkle, H. [Hrsg.]
Radon and radon-daughters metrology: basic aspects. (1991)
5th Internat.Symp.on the Natural Radiation Environment, Salzburg, A, September 22-28, 1991
Radon impact at underground workplaces in Germany (W). (1991)
5th Internat.Symp.on the Natural Radiation Environment, Salzburg, A, September 22-28, 1991
Radiation exposure of staff in German (W) balneotherapy. (1991)
Internat.Workshop on Radium, Uranium, Thorium, and Related Nuclides in Industry and Medicine: History and Current Uses, Badgastein, A, October 1-3, 1991
Urban, M., Schmitz, J., Kiefer, H.
5th Internat.Symp.on the Natural Radiation Environment, Salzburg, A, September 22-28, 1991
Strahlenbelastung durch Radon an Arbeitsplaetzen ausserhalb des Brennstoffkreislaufs. (1991)
Jacobs, H. [Hrsg.]
Pineau, J.F., Robe, M.C., Schmitz, J., Urban, M., Zettwoog, P.
Comite Technique AIEA sur les Aspects Technologiques de l'Extraction de l'Uranium, Montpellier, F, 21-24 Septembre 1987
Application of radiation protection instrumentation under mining conditions (1988)
Kvasnicka, J. [Hrsg.]
The KfK passive personal dosemeter for exposure to radon and external gamma-radiation. (1988)
Radiation Protection Practice : 7th Internat.Congress, Sydney, AUS, April 10 -17, 1988
ALARA and occupational exposure in underground mines. (1988)
3rd European Scientific Seminar on Radiation Protection Optimization 'Advances in Practical Implementation', Madrid, E, September 12-14, 1988
Praktische Erfahrungen mit der Dosismessung in Uranminen. (1986)
4th European Congress and Regional Congress of the Internat.Radiation Protection Association, Salzburg, A, September 15-19, 1986
Radiooekologische Untersuchungen im Raum Maehring/Poppenreuth (Opf.). (1985)
Schmitz, J., Olkis, A., Klenk, H., Baechmann, K.
KfK-3940B (Mai 85)
Glueckauf-Forschungshefte, 46(1985) S.200-02
KfK-3981B (Oktober 85)
Seminar on Exposure to Enhanced Natural Radiation and its Regulatory Implications, Maastricht, NL, March 25-27, 1985
Mine Dumps as a Source of Radon Impact on Buildings (1984)
More than 100 old mine dumps, active mine tailing ponds and granite quarries were investigated in South-West Germany to evaluate their potential impact on the environment caused by natural...
Applications of passive radon dosemeters in mining areas. (1984)
Internat.Conf.on Occupational Radiation Safety in Mining, Toronto, CDN, October 14-18, 1984
Mine dumps as a source of radon impact on buildings. (1984)
Radiation Protection Dosimetry, 7(1984) S.63-67
KfK-3577B (Juli 83)
Emission von Radionukliden aus den Halden des alten Silber-Kobalt-Erzbergbaus in Wittichen. (1982)
Schmitz, J., Fritsche, R., Gross, G.
Glueckauf-Forschungshefte, 43(1982) S.145-54
Schmitz, J., Merz, A., Kaspers, H.
Chemie-Technik, 9(1980) S.229-36
Das Mineral-Anreicherungsverfahren Flotation. (Ein Ueberblick). (1978)
Wiese, K., Schmitz, J., Wollmann, G.
KfK-2563 (Juli 78)
Grundlagenuntersuchungen in der Barytflotation mit Hilfe der Radionuklidtechnik. (1977)
Schmitz, J., Wiese, K., Hunsinger, H.
Erzmetall, 30(1977) S.399-406
Essig, G., Merz, A., Ruehl, E., Schmitz, J.
In: Operation of the Karlsruhe Isochronous Cyclotron in 1975.
Anwendung der Radionuklidtechnik in Chemie und Verfahrenstechnik. (1976)
Vogg, H., Braun, H., Loeffel, R., Lubecki, A., Merz, A., Schmitz, J., ...
Journal of Radioanalytical Chemistry, 32(1976) S. 495-510
Leckortung in erdverlegten Gasleitungen mit radioaktivem Argon. (1975)
Gas- und Wasserfach - Gas/Erdgas, 116(1975) S. 409-11
Experimentelle Untersuchung an einem Produktionsdrehrohrofen. (1974)
VTG-Fachuntersausschussitzung 'Radioisotope in der Verfahrenstechnik', Stuttgart, 25.-26.April 1974
Tensidrueckstaende auf der Oberflaeche von gespueltem Geschirr. (1973)
Tenside Detergents, 10(1973) S.11-13
Bestimmung von Resten nichtionogener Tenside auf Baumwolle. (1973)
Melliand Textilberichte, 54(1973) S.759-61
Experience with the Method of Autoradiography for Firing Distance Determination. (1973)
2.International Conference on Forensic Activation Analysis, Glasgow, 27-29 September 1972. Texts of Papers. Glasgow: Western-Regional Hospital Board 1972. S.22/1-22/16
Praktische Erfahrungen mit der Neutronenaktivierungsanalyse von Waessern. (1972)
Schmitz, J., Schneider, J., Vogg, H.
Gas- und Wasserfach: Wasser-Abwasser, 113(1972) S.318-24
Kerntechnik, 12(1970) S.202-06
Batsche, H., Bauer, F., Behrens, H., Buchtela, K., Dombrowski, H.J., Geisler, R., ...
Steirische Beitraege zur Hydrogeologie, 22(1970) S.5-165