Conduction and Scattering Mechanisms in Potential Modulated Inversion Layers. (1998)
Almaggoussi, A., Sicart, J., Robert, J. L., Vincent, G.
A quantitative approach to the polycrystalline semiconductor model using an original e-beam irradiation method is proposed. The e-beam was scanned along lines parallel and perpendicular to the...
Negative Magnetoresistance in Silicon Doped AlAs-GaAs Short Period Superlattices (1997)
Gougam, A., Sicart, J., Robert, J.
We report the negative magnetoresistance effect observed in GaAs-AlAs short period superlattices doped selectively in GaAs or in AlAs or doped uniformly. This doping technique introduces deep donor...
Negative Magnetoresistance in Silicon Doped AlAs-GaAs Short Period Superlattices (1997)
Gougam, A., Sicart, J., Robert, J.
We report the negative magnetoresistance effect observed in GaAs-AlAs short period superlattices doped selectively in GaAs or in AlAs or doped uniformly. This doping technique introduces deep donor...
Negative Magnetoresistance in Silicon Doped AlAs-GaAs Short Period Superlattices (1997)
Gougam, A., Sicart, J., Robert, J.
We report the negative magnetoresistance effect observed in GaAs-AlAs short period superlattices doped selectively in GaAs or in AlAs or doped uniformly. This doping technique introduces deep donor...
Jeanjean, P., Sicart, J., Robert, J., Le Berre, M., Pinard, P., Conedera, V.
We investigate the electrical properties of polycrystalline silicon thin films implanted with arsenic or boron ions. Two types of post-implantation annealing have been performed on the samples: a...
Jeanjean, P., Sicart, J., Robert, J., Le Berre, M., Pinard, P., Conedera, V.
We investigate the electrical properties of polycrystalline silicon thin films implanted with arsenic or boron ions. Two types of post-implantation annealing have been performed on the samples: a...
Jeanjean, P., Sicart, J., Robert, J., Le Berre, M., Pinard, P., Conedera, V.
We investigate the electrical properties of polycrystalline silicon thin films implanted with arsenic or boron ions. Two types of post-implantation annealing have been performed on the samples: a...
Jeanjean, P., Sicart, J., Robert, J., Mollot, F., Planel, R.
Hall and photo-Hall measurements have been carried out between 4 K et 400 K on MBE deposited AlAs / GaAs superiattices (SPS) with short period (25 Å < P < 50 Å) SPSs were uniformly or selectively...
Jeanjean, P., Sicart, J., Robert, J., Mollot, F., Planel, R.
Hall and photo-Hall measurements have been carried out between 4 K et 400 K on MBE deposited AlAs / GaAs superiattices (SPS) with short period (25 Å < P < 50 Å) SPSs were uniformly or selectively...
Jeanjean, P., Sicart, J., Robert, J., Mollot, F., Planel, R.
Hall and photo-Hall measurements have been carried out between 4 K et 400 K on MBE deposited AlAs / GaAs superiattices (SPS) with short period (25 Å < P < 50 Å) SPSs were uniformly or selectively...
Vettese, F., Sicart, J., Robert, J., Vincent, G., Vareille, A.
We report on electrical properties of a modulated potential of a MOS inversion layer. Lines oriented parallel and perpendicular to the current flow have been grated by using periodic electron beam...
Vettese, F., Sicart, J., Robert, J., Vincent, G., Vareille, A.
We report on electrical properties of a modulated potential of a MOS inversion layer. Lines oriented parallel and perpendicular to the current flow have been grated by using periodic electron beam...
Vettese, F., Sicart, J., Robert, J., Vincent, G., Vareille, A.
We report on electrical properties of a modulated potential of a MOS inversion layer. Lines oriented parallel and perpendicular to the current flow have been grated by using periodic electron beam...
Nous proposons une méthode simple de détermination de l'énergie d'ancrage de torsion d'une lamelle cristal-liquide nématique. Nous avons appliqué cette méthode au cas d'ancrages très faibles...
Nous proposons une méthode simple de détermination de l'énergie d'ancrage de torsion d'une lamelle cristal-liquide nématique. Nous avons appliqué cette méthode au cas d'ancrages très faibles...
Nous proposons une méthode simple de détermination de l'énergie d'ancrage de torsion d'une lamelle cristal-liquide nématique. Nous avons appliqué cette méthode au cas d'ancrages très faibles...