J. Suda

Genome size diversity in orchids: consequences and evolution (2009)

Leitch, I. J., Kahandawala, I., Suda, J., Hanson, L., Ingrouille, M. J., Chase, M. W., ...

Background The amount of DNA comprising the genome of an organism (its genome size) varies a remarkable 40 000-fold across eukaryotes, yet most groups are characterized by much narrower ranges (e.g....

Impact of surface step heights of 6H-SiC (0001) vicinal substrates in heteroepitaxial growth of 2H-AlN (2008)

Okumura, H, Horita, M, Kimoto, T, Suda, J

Anomalous mode, elastic constants and phonon images in CaWO4 (2007)

Hayasaka, K., Higashi, R., Suda, J., Tanaka, Y., Tamura, S., Giltrow, M., ...

Stimulated by the “anomalous mode” observed in the time-of-flight measurement of phonon signals [J.K. Wigmore, A.G. Kozorezov, H. bin Rani, M. Giltrow, H. Kraus, B.M. Taele, Physica B 316–317...

4H-SiC lateral double RESURF MOSFETs with low ON resistance (2007)

Noborio, M, Suda, J, Kimoto, T

A comparative study of nonpolar a-plane and m-plane AlN grown on 4H-SiC by plasma-assisted molecular-beam epitaxy (2007)

Suda, J., Horita, M., Armitage, R., Kimoto, T.

m-plane GaN layers grown by rf-plasma assisted molecular beam epitaxy with varying Ga/N flux ratios on m-plane 4H-SiC substrates (2007)

Armitage, R., Horita, M., Suda, J., Kimoto, T.

High-quality nonpolar 4H-AlN grown on 4H-SiC (11(2)over-bar20) substrate by molecular-beam epitaxy (2006)

Horita, M, Suda, J, Kimoto, T

Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC (2006)

Kamiyama, S, Maeda, T, Nakamura, Y, Iwaya, M, Amano, H, Akasaki, I, ...

Epitaxy of nonpolar AlN on 4H-SiC (1-100) substrates (2006)

Armitage, R, Suda, J, Kimoto, T

Epitaxy of nonpolar AlN on 4H-SiC (1-100) substrates (2006)

Armitage, R, Suda, J, Kimoto, T

Characterization of ZrB2(0001) surface prepared by ex situ HF solution treatment toward applications as a substrate for GaN growth (2006)

Armitage, R, Suda, J, Kimoto, T

Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC (2006)

Kamiyama, S, Maeda, T, Nakamura, Y, Iwaya, M, Amano, H, Akasaki, I, ...

Structure analysis of ZrB2(0001) surface prepared by ex situ HF treatment (2006)

Suto, H, Fujii, S, Miyamae, N, Armitage, RD, Suda, J, Kimoto, T, ...

High-quality nonpolar 4H-AlN grown on 4H-SiC (11(2)over-bar20) substrate by molecular-beam epitaxy (2006)

Horita, M, Suda, J, Kimoto, T

1330 V, 67 m Omega center dot cm(2) 4H-SiC(0001) RESURF MOSFET (2005)

Kimoto, T, Kawano, H, Suda, J

Experimental and theoretical investigations on short-channel effects in 4H-SiC MOSFETs (2005)

Noborio, M, Kanzaki, Y, Suda, J, Kimoto, T

Design and Fabrication of RESURF MOSFETs on 4H-SiC(0001), (1120), and 6H-SiC(0001) (2005)

Kimoto, T, Kosugi, H, Suda, J, Kanzaki, Y, Matsunami, H

1330 V, 67 m Omega center dot cm(2) 4H-SiC(0001) RESURF MOSFET (2005)

Kimoto, T, Kawano, H, Suda, J

Design and Fabrication of RESURF MOSFETs on 4H-SiC(0001), (1120), and 6H-SiC(0001) (2005)

Kimoto, T, Kosugi, H, Suda, J, Kanzaki, Y, Matsunami, H

Short-Channel Effects in 4H-SiC MOSFETs (2005)

Noborio, M, Kanzaki, Y, Suda, J, Kimoto, T, Matsunami, H

Experimental and theoretical investigations on short-channel effects in 4H-SiC MOSFETs (2005)

Noborio, M, Kanzaki, Y, Suda, J, Kimoto, T

Mechanism of stabilization of zincblende GaN on hexagonal substrates: Insight gained from growth on ZrB2(0001) (2005)

Armitage, R, Nishizono, K, Suda, J, Kimoto, T

Dose designing for high-voltage 4H-SiC RESURF MOSFETs - device simulation and fabrication (2005)

Kawano, H, Kimoto, T, Suda, J, Matsunami, H

Towards high-quality AlN/SiC hetero-interface by controlling initial processes in molecular-beam epitaxy (2004)

Onojima, N, Kaido, J, Suda, J, Kimoto, T, Matsunami, H

High channel mobilities of MOSFETs on highly-doped 4H-SiC (11-20) face by oxidation in N2O ambient (2004)

Kanzaki, Y, Kinbara, H, Kosugi, H, Suda, J, Kimoto, T, Matsunami, H

4H-SiC MOSFETs with a novel channel structure (sandwiched channel MOSFET) (2004)

Kaido, J, Kimoto, T, Suda, J, Matsunami, H

4H-polytype AlN grown on 4H-SiC(11(2)over-bar0) substrate by polytype replication (2003)

Onojima, N, Suda, J, Kimoto, T, Matsunami, H

Fabrication of SiC lateral super junction diodes with multiple stacking p- and n-layers (2003)

Miura, M, Nakamura, S, Suda, J, Kimoto, T, Matsunami, H

High-quality AlN by initial layer-by-layer growth on surface-controlled 4H-SiC(0001) substrate (2003)

Onojima, N, Suda, J, Matsunami, H

ZrB2 substrate for nitride semiconductors (2003)

Kinoshita, H, Otani, S, Kamiyama, S, Amano, H, Akasaki, I, Suda, J, ...

4H-polytype AlN grown on 4H-SiC(11(2)over-bar0) substrate by polytype replication (2003)

Onojima, N, Suda, J, Kimoto, T, Matsunami, H

Fabrication of SiC lateral super junction diodes with multiple stacking p- and n-layers (2003)

Miura, M, Nakamura, S, Suda, J, Kimoto, T, Matsunami, H

Effects of 6H-SiC surface reconstruction on lattice relaxation of AlN buffer layers in molecular-beam epitaxial growth of GaN (2002)

Suda, J, Miura, K, Honaga, M, Nishi, Y, Onojima, N, Matsunami, H

Molecular-beam epitaxial growth of insulating AlN on surface-controlled 6H-SiC substrate by HCl gas etching (2002)

Onojima, N, Suda, J, Matsunami, H

Heteroepitaxial growth of insulating AlN on 6H-SiC by MBE (2002)

Onojima, N, Suda, J, Matsunami, H

Lattice relaxation process of AlN growth on atomically flat 6H-SiC substrate in molecular beam epitaxy (2002)

Onojima, N, Suda, J, Matsunami, H

Molecular-beam epitaxial growth of insulating AlN on surface-controlled 6H-SiC substrate by HCl gas etching (2002)

Onojima, N, Suda, J, Matsunami, H

Heteroepitaxial growth of group-III nitrides on lattice-matched metal boride ZrB2 (0001) by molecular beam epitaxy (2002)

Suda, J, Matsunami, H

Effects of 6H-SiC surface reconstruction on lattice relaxation of AlN buffer layers in molecular-beam epitaxial growth of GaN (2002)

Suda, J, Miura, K, Honaga, M, Nishi, Y, Onojima, N, Matsunami, H

Scanning capacitance and spreading resistance microscopy of SiC multiple-pn-junction structure (2002)

Suda, J, Nakamura, S, Miura, M, Kimoto, T, Matsunami, H

Growth of AlN (11(2)over-bar0) on 6H-SiC (11(2)over-bar0) by molecular-beam epitaxy (2002)

Onojima, N, Suda, J, Matsunami, H

Scanning capacitance microscopy of SiC multiple PN junction structure grown by cold-wall chemical vapor deposition (2002)

Suda, J, Nakamura, S, Miura, M, Kimoto, T, Matsunami, H

SiC lateral super-junction diodes fabricated by epitaxial growth (2002)

Miura, M, Nakamura, S, Suda, J, Kimoto, T, Matsunami, H

Zirconium diboride (0001) as an electrically conductive lattice-matched substrate for gallium nitride (2001)

Kinoshita, H, Otani, S, Kamiyama, S, Amano, H, Akasaki, I, Suda, J, ...

Selective area growth of cubic GaN on 3C-SiC (001) by metalorganic molecular beam epitaxy (2000)

Suda, J, Kurobe, T, Nakamura, S, Matsunami, H

GaP/Si heterojunction with ohmic conduction fabricated by wafer fusion technique (2000)

Soeno, A, Kajita, D, Suda, J, Matsunami, H

Disparate differentiation in mouse hemopoietic colonies derived from paired progenitors.

Suda, T, Suda, J, Ogawa, M

We analyzed the differentiation of murine hemopoietic colonies derived from paired progenitors in culture. Single progenitors were isolated by use of a micromanipulation technique from blast cell...

Single-cell origin of mouse hemopoietic colonies expressing multiple lineages in variable combinations.

Suda, T, Suda, J, Ogawa, M

By using a micromanipulator, single cells from blast cell colonies were individually transferred to 35-mm culture dishes for secondary colony formation. When individual colonies appeared to be...

Disparate differentiation in mouse hemopoietic colonies derived from paired progenitors.

Suda, T, Suda, J, Ogawa, M

We analyzed the differentiation of murine hemopoietic colonies derived from paired progenitors in culture. Single progenitors were isolated by use of a micromanipulation technique from blast cell...

Single-cell origin of mouse hemopoietic colonies expressing multiple lineages in variable combinations.

Suda, T, Suda, J, Ogawa, M

By using a micromanipulator, single cells from blast cell colonies were individually transferred to 35-mm culture dishes for secondary colony formation. When individual colonies appeared to be...