Growth mechanisms of GaN on the O-terminated ZnO(000-1) surfaces (2006)
Fujiwara, Katsutoshi, Ishii, Akira, Ebisuzaki, Toshikazu, Kobayashi, Atsushi, Kawaguchi, Yuji, Ohta, Jitsuo, ...
We have investigated the stability of the 1ML-GaN on the O-polarity ZnO(000-1) interface structure using the first-principles calculation. We have found in our calculated results that the most stable...