Large Focal Plane Arrays for Future Missions (2009)
Scowen, Paul A., Nikzad, Shouleh, Hoenk, Michael, Gontijo, Ivair, Shapiro, Andrew, Greer, Frank, ...
We outline the challenges associated with the development and construction of large focal plane arrays for use both on the ground and in space. Using lessons learned from existing JPL-led and ASU/JPL...
Blacksberg, Jordana, Hoenk, Michael E., Elliott, S. Tom, Holland, Stephen E., Nikzad, Shouleh
A low temperature process for Sb doping of silicon has been developed as a backsurface treatment for high-purity n-type imaging detectors. Molecular beam epitaxy (MBE) is used to achieve very high...
Ultra-low-temperature homoepitaxial growth of Sb-doped silicon (2008)
Blacksberg, Jordana, Hoenk, Michael E., Nikzad, Shouleh
An ultra-low-temperature process for homoepitaxial growth of high-quality, surface-confined, Sb-doped silicon layers is presented. Non-equilibrium growth by molecular beam epitaxy (MBE) is used to...
Delta-doped high purity silicon UV-NIR CCDs with high QE and low dark current (2007)
Hoenk, Michael, Blacksberg, Jordana, Nikzad, Shouleh, Elliott, S. Tom, Holland, Steve, Bebek, Chris
NASA/JPL
Delta doping high purity CCDs and CMOS for LSST (2006)
Blacksberg, Jordana, Nikzad, Shouleh, Hoenk, Michael, Elliott, S. Tom, Bebek, Chris, Holland, Steve, ...
NASA/JPL
Blacksberg, Jordana, Hoenk, Michael E., Elliott, S. Tom, Holland, Stephen E., Nikzad, Shouleh
A low temperature process for Sb doping of silicon has been developed as a backsurface treatment for high-purity n-type imaging detectors. Molecular beam epitaxy (MBE) is used to achieve very high...
Thesis (M.S. in Engineering-Materials Science and Mineral Engineering) --University of California, Berkeley, 1997.