Hua, Bin, Motohisa, Junichi, Ding, Yinｇ, Hara, Shinjiroh, Fukui, Takashi
The authors present the formation of Fabry-Pérot cavity in single GaAs nanowire prepared by selective-area metal organic vapor phase epitaxy. The grown nanowires with hexagonal cross section are...
Aharonov-Bohm Oscillations in Photoluminescence from Charged Exciton in Quantum Tubes (2007)
Tsumura, Kohei, Nomura, Shintaro, Mohan, Pamela, Motohisa, Junichi, Fukui, Takashi
The oscillation of photoluminescence peak energies is observed in InAs quantum tubes depending on the magnetic flux through the tube. The oscillation is shown to be due to the Aharonov-Bohm effect of...
Mohan, Premila, Motohisa, Junichi, Fukui, Takashi
We report the growth of InP/InAs/InP core-multishell nanowire arrays by selective area metalorganic vapor phase epitaxy. The core-multishell nanowires were designed to accommodate a strained InAs...
Mohan, Premila, Motohisa, Junichi, Fukui, Takashi
We report the growth of InP/InAs/InP core-multishell nanowire arrays by selective area metalorganic vapor phase epitaxy. The core-multishell nanowires were designed to accommodate a strained InAs...
Mohan, Premila, Motohisa, Junichi, Fukui, Takashi
We report the growth of InP/InAs/InP core-multishell nanowire arrays by selective area metalorganic vapor phase epitaxy. The core-multishell nanowires were designed to accommodate a strained InAs...
Mohan, Premila, Motohisa, Junichi, Fukui, Takashi
We report the realization of ordered arrays of single-crystalline InAs nanotubes by a simple pure-eptiaxial approach. The process involved the fabrication of lattice-mismatched InP/InAs core-shell...
Mohan, Premila, Motohisa, Junichi, Fukui, Takashi
We report the realization of ordered arrays of single-crystalline InAs nanotubes by a simple pure-eptiaxial approach. The process involved the fabrication of lattice-mismatched InP/InAs core-shell...
Mohan, Premila, Motohisa, Junichi, Fukui, Takashi
We report the realization of ordered arrays of single-crystalline InAs nanotubes by a simple pure-eptiaxial approach. The process involved the fabrication of lattice-mismatched InP/InAs core-shell...
Nataraj, Devaraj, Ooike, Noboru, Motohisa, Junichi, Fukui, Takashi, 本久, 順一
Narrow wirelike openings were defined on SiO2-masked GaAs (001) substrates by electron-beam lithography and wet chemical etching methods. A one-dimensional GaAs channel-coupled InAs quantum dot...
Nataraj, Devaraj, Ooike, Noboru, Motohisa, Junichi, Fukui, Takashi
Narrow wirelike openings were defined on SiO2-masked GaAs (001) substrates by electron-beam lithography and wet chemical etching methods. A one-dimensional GaAs channel-coupled InAs quantum dot...
Nataraj, Devaraj, Ooike, Noboru, Motohisa, Junichi, Fukui, Takashi
Narrow wirelike openings were defined on SiO2-masked GaAs (001) substrates by electron-beam lithography and wet chemical etching methods. A one-dimensional GaAs channel-coupled InAs quantum dot...
Miyoshi, Yoshihito, Nakajima, Fumito, Motohisa, Junichi, Fukuia, Takashi, 本久, 順一
We demonstrate single-electron operation of a 1 bit adder circuit using GaAs single-electron tunneling transistors (SETs). GaAs dot and wire coupled structures for the fabrication of SETs were grown...
Miyoshi, Yoshihito, Nakajima, Fumito, Motohisa, Junichi, Fukuia, Takashi
We demonstrate single-electron operation of a 1 bit adder circuit using GaAs single-electron tunneling transistors (SETs). GaAs dot and wire coupled structures for the fabrication of SETs were grown...
Miyoshi, Yoshihito, Nakajima, Fumito, Motohisa, Junichi, Fukuia, Takashi
We demonstrate single-electron operation of a 1 bit adder circuit using GaAs single-electron tunneling transistors (SETs). GaAs dot and wire coupled structures for the fabrication of SETs were grown...
Catalyst-free growth of GaAs nanowires by selective-area metalorganic vapor-phase epitaxy (2005)
Noborisaka, Jinichiro, Motohisa, Junichi, Fukui, Takashi, 本久, 順一
We report on the fabrication of GaAs hexagonal nanowires surrounded by (110) vertical facets on a GaAs (111) B substrate using selective-area (SA) metalorganic vapor-phase epitaxial (MOVPE) growth....
Catalyst-free growth of GaAs nanowires by selective-area metalorganic vapor-phase epitaxy (2005)
Noborisaka, Jinichiro, Motohisa, Junichi, Fukui, Takashi
We report on the fabrication of GaAs hexagonal nanowires surrounded by (110) vertical facets on a GaAs (111) B substrate using selective-area (SA) metalorganic vapor-phase epitaxial (MOVPE) growth....
Catalyst-free growth of GaAs nanowires by selective-area metalorganic vapor-phase epitaxy (2005)
Noborisaka, Jinichiro, Motohisa, Junichi, Fukui, Takashi
We report on the fabrication of GaAs hexagonal nanowires surrounded by (110) vertical facets on a GaAs (111) B substrate using selective-area (SA) metalorganic vapor-phase epitaxial (MOVPE) growth....
Mohan, Premila, Motohisa, Junichi, Fukui, Takashi, 本久, 順一
The experimental realization of two-dimensional semiconductor artificial lattice based on InAs quantum wires is reported here. Artificial Kagome lattice fabricated using InAs quantum wires of unit...
Mohan, Premila, Motohisa, Junichi, Fukui, Takashi
The experimental realization of two-dimensional semiconductor artificial lattice based on InAs quantum wires is reported here. Artificial Kagome lattice fabricated using InAs quantum wires of unit...
Mohan, Premila, Motohisa, Junichi, Fukui, Takashi
The experimental realization of two-dimensional semiconductor artificial lattice based on InAs quantum wires is reported here. Artificial Kagome lattice fabricated using InAs quantum wires of unit...
Mohan, Premila, Nakajima, Fumito, Akabori, Masashi, Motohisa, Junichi, Fukui, Takashi, 本久, 順一
Artificial two-dimensional semiconductor Kagome lattice structures formed by quantum wires can show ferromagnetism when the flatband is half filled, even though it does not have any magnetic...
Mohan, Premila, Nakajima, Fumito, Akabori, Masashi, Motohisa, Junichi, Fukui, Takashi
Artificial two-dimensional semiconductor Kagome lattice structures formed by quantum wires can show ferromagnetism when the flatband is half filled, even though it does not have any magnetic...
Mohan, Premila, Nakajima, Fumito, Akabori, Masashi, Motohisa, Junichi, Fukui, Takashi
Artificial two-dimensional semiconductor Kagome lattice structures formed by quantum wires can show ferromagnetism when the flatband is half filled, even though it does not have any magnetic...
Kim, Hyo Jin, Motohisa, Junichi, Fukui, Takashi, 本久, 順一
We investigated the formation of In0.8Ga0.2As self-assembled quantum dots (SAQDs) grown on SiO2-patterned 1°, 2°, and 5°-off (001) GaAs substrates by selective area metalorganic vapor phase...
Kim, Hyo Jin, Motohisa, Junichi, Fukui, Takashi
We investigated the formation of In0.8Ga0.2As self-assembled quantum dots (SAQDs) grown on SiO2-patterned 1°, 2°, and 5°-off (001) GaAs substrates by selective area metalorganic vapor phase...
Kim, Hyo Jin, Motohisa, Junichi, Fukui, Takashi
We investigated the formation of In0.8Ga0.2As self-assembled quantum dots (SAQDs) grown on SiO2-patterned 1°, 2°, and 5°-off (001) GaAs substrates by selective area metalorganic vapor phase...
Nakajima, Fumito, Ogasawara, Yuu, Motohisa, Junichi, Fukui, Takashi, 本久, 順一
We describe a method for fabricating GaAs dot arrays and dot-wire coupled structures having periodic nanofacets which uses selective area metalorganic vapor phase epitaxy. First, a thin GaAs buffer...
Nakajima, Fumito, Ogasawara, Yuu, Motohisa, Junichi, Fukui, Takashi
We describe a method for fabricating GaAs dot arrays and dot-wire coupled structures having periodic nanofacets which uses selective area metalorganic vapor phase epitaxy. First, a thin GaAs buffer...
Nakajima, Fumito, Ogasawara, Yuu, Motohisa, Junichi, Fukui, Takashi
We describe a method for fabricating GaAs dot arrays and dot-wire coupled structures having periodic nanofacets which uses selective area metalorganic vapor phase epitaxy. First, a thin GaAs buffer...