K. E. Enowbi

CMOS Silicon-on-Insulator technology: An alternative for NIR quantum efficiency enhanced CMOS imaging pixel detectors (2007)

Durini, D., Enowbi, K.E., Brockherde, W., Hosticka, B.J.

An experimental comparison between Time-Compression (TC) photogate pixel detectors fabricated in both, Silicon-on-Insulator (SOI) CMOS and 0.5µm standard CMOS processes, respectively, are presented...