K. H. Ploog

Publication List Details

Period

1995 - 9999

Number

52

Co-Authors

Carbon Incorportion in GaAs and AlxGa1-xAs Layers Grown by Molecular-Beam Epitaxy. (9999)

Giannini, C., Gerardi, C., Tapfer, L., Fischer, A., Ploog, K. H.

GaAs:C and Alx Ga(1-x) As:C films, grown by solid-source molecular-beam epitaxy with doping levels beyond 10 to the 19 power cm to the -3, have been studied by high resolution double-crystal x-ray...

Mesoscopic spin confinement during acoustically induced transport (2007)

Stotz, J. A. H., Santos, P. V., Hey, R., Ploog, K. H.

Long coherence lifetimes of electron spins transported using moving potential dots are shown to result from the mesoscopic confinement of the spin vector. The confinement dimensions required for spin...

Influence of the single-particle Zeeman energy on the quantum Hall ferromagnet at high filling factors (2007)

Piot, B. A., Maude, D. K., Henini, M., Wasilewski, Z. R., Gupta, J. A., Friedland, K. J., ...

In a recent paper [B. A. Piot et al., Phys. Rev. B 72, 245325 (2005)], we have shown that the lifting of the electron spin degeneracy in the integer quantum Hall effect at high filling factors should...

Magnetotransport in two-dimensional electron gases on cylindrical surfaces (2007)

Hey, R., Kostial, H., Jahn, U., Wiebicke, E., Ploog, K. H., ...

We have fabricated high-mobility, two-dimensional electron gases in a GaAs quantum well on cylindrical surfaces, which allows to investigate the magnetotransport behavior under varying magnetic...

Magnetophonon resonance in high density, high mobility quantum well systems (2006)

Faugeras, C., Maude, D. K., Martinez, G., Rigal, L. B., Proust, C., ...

We have investigated the magnetophonon resonance (MPR) effect in a series of single GaAs quantum well samples which are symmetrically modulation doped in the adjacent short period AlAs/GaAs...

The quantum Hall ferromagnet at high filling factors: A magnetic field induced Stoner transition (2005)

Piot, B. A., Maude, D. K., Henini, M., Wasilewski, Z. R., Friedland, K. J., Hey, R., ...

Spin splitting in the integer quantum Hall effect is investigated for a series of Al$_{x}$Ga$_{1-x}$As/GaAs heterojunctions and quantum wells. Magnetoresistance measurements are performed at mK...

Large spin splitting of GaN electronic states induced by Gd doping (2005)

Sapega, V. F., Ramsteiner, M., Dhar, S., Brandt, O., Ploog, K. H.

We present a detailed study of the magnetic-field and temperature-dependent polarization of the near-band-gap photoluminescence in Gd-doped GaN layers. Our study reveals an extraordinarily strong...

GaN:Gd: A superdilute ferromagnetic semiconductor with a Curie temperature above 300 K (2004)

Dhar, S., Brandt, O., Ramsteiner, M., Sapega, V. F., Ploog, K. H.

We investigate the magnetic and magneto-optic properties of epitaxial GaN:Gd layers as a function of the external magnetic field and temperature. An unprecedented magnetic moment is observed in this...

X-ray diffraction peak profiles from threading dislocations in GaN epitaxial films (2004)

Kaganer, V. M., Brandt, O., Trampert, A., Ploog, K. H.

We analyze the lineshape of x-ray diffraction profiles of GaN epitaxial layers with large densities of randomly distributed threading dislocations. The peaks are Gaussian only in the central, most...

Spin filtering in a hybrid ferromagnetic-semiconductor microstructure (2004)

Wróbel, J., Dietl, T., Lusakowski, A., Grabecki, G., Fronc, K., Hey, R., ...

We fabricated a hybrid structure in which cobalt and permalloy micromagnets produce a local in-plane spin-dependent potential barrier for high-mobility electrons at the GaAs/AlGaAs interface. Spin...

Magnetophonon resonance in high-density high-mobility quantum well systems (2004)

Faugeras, C., Maude, D. K., Martinez, G., Rigal, L. B., Proust, C., Friedland, K. J., ...

We have investigated the magnetophonon resonance (MPR) effect in a series of single GaAs quantum well samples which are symmetrically modulation doped in the adjacent short period AlAs/GaAs...

Improved synthesis of (In,Ga)N/GaN multiple quantum wells by plasma-assisted molecular-beam epitaxy (2003)

Brandt, O, Sun, Y J, Schonherr, H P, Ploog, K H, Waltereit, P, Lim, S H, ...

We present a simple strategy that minimizes the impact of surface segregation of In during the growth of (In,Ga) N/GaN multiple quantum wells by plasma-assisted molecular-beam epitaxy and...

Exciton localization and quantum efficiency - a comparative cathodoluminescence study of (In, Ga)N/GaN and GaN(Al,Ga)N quantum wells (2003)

Watson, I.M.*, Jahn, U., Dahr, S., Brandt, O., Grahn, H.T., Ploog, K.H.

We study the quantum efficiency () and transition energy (Et) as a function of excitation density and temperature in (In,Ga)N/GaN multiple quantum wells (MQWs) fabricated by molecular-beam epitaxy...

Exciton localization and quantum efficiency - a comparative cathodoluminescence study of (In, Ga)N/GaN and GaN(Al,Ga)N quantum wells (2003)

Watson, I.M., Jahn, U., Dahr, S., Brandt, O., Grahn, H.T., Ploog, K.H.

We study the quantum efficiency () and transition energy (Et) as a function of excitation density and temperature in (In,Ga)N/GaN multiple quantum wells (MQWs) fabricated by molecular-beam epitaxy...

Exciton localization and quantum efficiency - a comparative cathodoluminescence study of (In, Ga)N/GaN and GaN(Al,Ga)N quantum wells (2003)

Watson, I.M., Jahn, U., Dahr, S., Brandt, O., Grahn, H.T., Ploog, K.H.

We study the quantum efficiency () and transition energy (Et) as a function of excitation density and temperature in (In,Ga)N/GaN multiple quantum wells (MQWs) fabricated by molecular-beam epitaxy...

Nonpolar InxGa1-xN/GaN(1(1)over-bar00) multiple quantum wells grown on gamma-LiAlO2(100) by plasma-assisted molecular-beam epitaxy (2003)

Sun, Y J, Brandt, O, Cronenberg, S, Dhar, S, Grahn, H T, Ploog, K H, ...

M-plane In0.1Ga0.9N(1 (1) over bar 00) multiple quantum wells were grown on gamma-LiAlO2(100) by plasma-assisted molecular-beam epitaxy. The high brightness of the photoluminescence of these multiple...

Magnetic correlations in the paramagnetic phases of MnAs (2003)

Neumann, K-U., Ziebeck, K.R.A., Jewiss, F., Daweritz, L., Ploog, K.H., Murani, A.

This article was published in the journal, Physica B [© Elsevier]. It is also available: http://www.sciencedirect.com/science/journal/09214526.

Magnetic correlations in the paramagnetic phases of MnAs (2003)

Neumann, K-U., Ziebeck, K.R.A., Jewiss, F., Daweritz, L., Ploog, K.H., Murani, A.

This article was published in the journal, Physica B [© Elsevier]. It is also available: http://www.sciencedirect.com/science/journal/09214526.

Photoelectron emission from heterojunctions with intralayers: band-offset changes vs. band-bending effects (2002)

Horn,Karsten, Moreno,Maria, Alonso,Maria, Höricke,M., Hey,R., Sacedón,J. L., ...

The concept of "tuning" semiconductor heterojunction band offsets, by inserting a very thin layer of foreign atoms at the interface which acts as an "interface dipole", has received considerable...

Photoelectron emission from heterojunctions with intralayers: band-offset changes vs. band-bending effects (2002)

Horn, Karsten, Moreno, Maria, Alonso, Maria, Höricke, M., Hey, R., Sacedón, J. L., ...

The concept of "tuning" semiconductor heterojunction band offsets, by inserting a very thin layer of foreign atoms at the interface which acts as an "interface dipole", has received considerable...

Strain in buried quantum wires: Analytical calculations and x-ray diffraction study (2002)

Kaganer, V., Jenichen, B., Paris, G., Ploog, K.H., Konovalov, O., Mikulik, P., ...

The displacement field in and around periodically arranged quantum wires embedded in a crystalline matrix is calculated analytically for an arbitrary finite thickness of the cover layer. A good...

Anharmonicity of the E2(high) and A(1)(LO) phonons in GaN studied by temperature-dependent Raman spectroscopy (2002)

Giehler, M., Ramsteiner, M., Waltereit, P., Brandt, O., Ploog, K.H., Obloh, H.

We study the influence of heteroepitaxy as well as intrinsic anharmonicity of the E2(high) and A1(LO) lattice vibrations in wurtzite GaN layers. The intrinsic phononSphonon scattering of bulk GaN...

Quantum mechanical repulsion of exciton levels in a disordered quantum well evidenced by near-field spectroscopy (2002)

Emiliani, V., Lienau, C., Elasaesser, T., Savona, V., Runge, E., Zimmermann, R., ...

Near-field photoluminescence spectra of a single quantum well dominated by emission from localized excitons are subjected to a statistical analysis of the two-energy autocorrelation function, This...

Near-field imaging and spectroscopy of localized and delocalized excitons in semiconductor nanostructures (2001)

Intonti, F., Emiliani, V., Elasaesser, T., Savona, V., Runge, E., Zimmermann, R., ...

We resolve the characteristic emission features of excitons in a single GaAs quantum wire. We report emission from both localized excitons and quasi-one-dimensional excitons that are delocalized over...

Quantum mechanical repulsion of exciton levels in a disordered quantum well (2001)

Emiliani, V., Lienau, C., Elsaesser, T., Savona, V., Runge, E., Zimmermann, R., ...

Spatially resolved photoluminescence spectra of a single quantum well are recorded by near-field spectroscopy. A set of over four hundred spectra displaying sharp emission lines from localized...

Microstructure formation during MnAs growth on GaAs(0 0 1) (1999)

Schippan, F., Trampert, A., Daweritz, L., Ploog, K.H., Dennis, B., Neumann, K-U., ...

This article was publsihed in the journal, Journal of Crystal Growth [© Elsevier]. It is available at: http://www.sciencedirect.com/science/journal/00220248.

Microstructure formation during MnAs growth on GaAs(0 0 1) (1999)

Schippan, F., Trampert, A., Daweritz, L., Ploog, K.H., Dennis, B., Neumann, K-U., ...

This article was publsihed in the journal, Journal of Crystal Growth [© Elsevier]. It is available at: http://www.sciencedirect.com/science/journal/00220248.

Electrically tunable GHz oscillations in doped GaAs-AlAs superlattices (1997)

Kastrup, J., Hey, R., Ploog, K. H., Grahn, H. T., Bonilla, L. L., Kindelan, M., ...

Tunable oscillatory modes of electric-field domains in doped semiconductor superlattices are reported. The experimental investigations demonstrate the realization of tunable, GHz frequencies in...

A Raman spectroscopic study of the Si, Be, and C incorporation in InxGa1-xAs relaxed layers (1995)

Calle, F., Sacedon, A., Calleja, E., Munoz, E., Wagner, J., ...

The incorporation of high concentrations (>1019 cm-3) of Si, Be, and C in InxGa1-xAs relaxed layers has been studied as a function of In content (x