Enhancement of resistivity of Czochralski silicon by deep level manganese doping (2006)
Mallik, K, De Groot, C H, Ashburn, P, Wilshaw, P R
Deep level manganese Mn doping has been used to fabricate very high resistivity single crystal silicon substrates grown by the Czochralski method. The Mn has been introduced by ion implantation with...
Enhancement of resistivity of Czochralski silicon by deep level manganese doping (2006)
Mallik, K, De Groot, C H, Ashburn, P, Wilshaw, P R
Deep level manganese Mn doping has been used to fabricate very high resistivity single crystal silicon substrates grown by the Czochralski method. The Mn has been introduced by ion implantation with...
Enhancement of resistivity of Czochralski silicon by deep level manganese doping (2006)
Mallik, K, De Groot, C H, Ashburn, P, Wilshaw, P R
Deep level manganese Mn doping has been used to fabricate very high resistivity single crystal silicon substrates grown by the Czochralski method. The Mn has been introduced by ion implantation with...
Enhancement of resistivity of Czochralski silicon by deep level manganese doping (2006)
Mallik, K, De Groot, C H, Ashburn, P, Wilshaw, P R
Deep level manganese Mn doping has been used to fabricate very high resistivity single crystal silicon substrates grown by the Czochralski method. The Mn has been introduced by ion implantation with...
The structural and electrical properties of thermally grown TiO2 thin films (2006)
Chong, LH, Mallik, K, De Groot, CH, Kersting, R
We studied the structural and electrical properties of TiO2 thin films grown by thermal oxidation of e-beam evaporated Ti layers on Si substrates. Time of flight secondary ion mass spectroscopy...
The structural and electrical properties of thermally grown TiO2 thin films (2006)
Chong, LH, Mallik, K, De Groot, CH, Kersting, R
We studied the structural and electrical properties of TiO2 thin films grown by thermal oxidation of e-beam evaporated Ti layers on Si substrates. Time of flight secondary ion mass spectroscopy...
The structural and electrical properties of thermally grown TiO2 thin films (2006)
Chong, LH, Mallik, K, De Groot, CH, Kersting, R
We studied the structural and electrical properties of TiO2 thin films grown by thermal oxidation of e-beam evaporated Ti layers on Si substrates. Time of flight secondary ion mass spectroscopy...
The structural and electrical properties of thermally grown TiO2 thin films (2006)
Chong, LH, Mallik, K, De Groot, CH, Kersting, R
We studied the structural and electrical properties of TiO2 thin films grown by thermal oxidation of e-beam evaporated Ti layers on Si substrates. Time of flight secondary ion mass spectroscopy...
Semi-insulating Czochralski silicon for radio frequency applications (2006)
Mallik, K., De Groot, C.H., Ashburn, P., Wilshaw, P.R.
Deep level manganese doping by ion implantation and rapid thermal annealing have been used for the first time to make very high resistivity Czochralski silicon substrates up to 10 kΩcm and on the...
Semi-insulating Czochralski silicon for radio frequency applications (2006)
Mallik, K., De Groot, C.H., Ashburn, P., Wilshaw, P.R.
Deep level manganese doping by ion implantation and rapid thermal annealing have been used for the first time to make very high resistivity Czochralski silicon substrates up to 10 kΩcm and on the...
Semi-insulating Czochralski silicon for radio frequency applications (2006)
Mallik, K., De Groot, C.H., Ashburn, P., Wilshaw, P.R.
Deep level manganese doping by ion implantation and rapid thermal annealing have been used for the first time to make very high resistivity Czochralski silicon substrates up to 10 kΩcm and on the...
Semi-insulating Czochralski silicon for radio frequency applications (2006)
Mallik, K., De Groot, C.H., Ashburn, P., Wilshaw, P.R.
Deep level manganese doping by ion implantation and rapid thermal annealing have been used for the first time to make very high resistivity Czochralski silicon substrates up to 10 kΩcm and on the...