K. Morigaki

Publication List Details

Period

1975 - 2004

Number

18

Co-Authors

Photolithographic polymerization of diacetylene-containing phospholipid bilayers studied by multimode atomic force microscopy (2003)

Morigaki,K., Schönherr,H., Frank,C. W., Knoll,Wolfgang

Photopolymerization of the diacetylene-containing phospholipid 1,2-bis(10,12-tricosadiynoyl)-sn-glycero-3-phosphocholine (1) in substrate-supported planar lipid bilayers (SPBs) has been studied by...

Photolithographic polymerization of diacetylene-containing phospholipid bilayers studied by multimode atomic force microscopy (2003)

Morigaki, K., Schönherr, H., Frank, C. W., Knoll, Wolfgang

Photopolymerization of the diacetylene-containing phospholipid 1,2-bis(10,12-tricosadiynoyl)-sn-glycero-3-phosphocholine (1) in substrate-supported planar lipid bilayers (SPBs) has been studied by...

Photopolymerization of diacetylene lipid bilayers and its application to the construction of micropatterned biomimetic membranes (2002)

Morigaki,K., Baumgart,T., Jonas,Ulrich, Offenhäusser,Andreas, Knoll,Wolfgang

Photopolymerization of diacetylene-containing amphiphiles in substrate-supported bilayers has been studied in connection with the development of a new fabrication strategy of micropatterned...

Photopolymerization of diacetylene lipid bilayers and its application to the construction of micropatterned biomimetic membranes (2002)

Morigaki, K., Baumgart, T., Jonas, Ulrich, Offenhäusser, Andreas, Knoll, Wolfgang

Photopolymerization of diacetylene-containing amphiphiles in substrate-supported bilayers has been studied in connection with the development of a new fabrication strategy of micropatterned...

DEFECT CREATION BY OPTICAL EXCITATION IN HYDROGENATED AMORPHOUS SILICON : TIME-RESOLVED LUMINESCENCE AND ODMR MEASUREMENTS (1981)

Morigaki, K., Hirabayashi, I., Sano, Y., Nitta, S.

We present evidence for defect creation by prolonged laser light irradiation at low temperatures in a-Si:H from the time-resolved luminescence and optically detected magnetic resonance measurements.

RECOMBINATION PROCESSES AND GAP STATES IN HYDROGENATED AMORPHOUS SILICON AS ELUCIDATED BY TIME-RESOLVED LUMINESCENCE MEASUREMENTS (1981)

Hirabayashi, I., Morigaki, K., Nitta, S.

Time-resolved luminescence experiments have been carried out in a-Si : H. The results are interpreted on the basis of a model calculation in which radiative recombination of trapped electron-hole...

DEFECT CREATION BY OPTICAL EXCITATION IN HYDROGENATED AMORPHOUS SILICON : TIME-RESOLVED LUMINESCENCE AND ODMR MEASUREMENTS (1981)

Morigaki, K., Hirabayashi, I., Sano, Y., Nitta, S.

We present evidence for defect creation by prolonged laser light irradiation at low temperatures in a-Si:H from the time-resolved luminescence and optically detected magnetic resonance measurements.

RECOMBINATION PROCESSES AND GAP STATES IN HYDROGENATED AMORPHOUS SILICON AS ELUCIDATED BY TIME-RESOLVED LUMINESCENCE MEASUREMENTS (1981)

Hirabayashi, I., Morigaki, K., Nitta, S.

Time-resolved luminescence experiments have been carried out in a-Si : H. The results are interpreted on the basis of a model calculation in which radiative recombination of trapped electron-hole...

DEFECT CREATION BY OPTICAL EXCITATION IN HYDROGENATED AMORPHOUS SILICON : TIME-RESOLVED LUMINESCENCE AND ODMR MEASUREMENTS (1981)

Morigaki, K., Hirabayashi, I., Sano, Y., Nitta, S.

We present evidence for defect creation by prolonged laser light irradiation at low temperatures in a-Si:H from the time-resolved luminescence and optically detected magnetic resonance measurements.

RECOMBINATION PROCESSES AND GAP STATES IN HYDROGENATED AMORPHOUS SILICON AS ELUCIDATED BY TIME-RESOLVED LUMINESCENCE MEASUREMENTS (1981)

Hirabayashi, I., Morigaki, K., Nitta, S.

Time-resolved luminescence experiments have been carried out in a-Si : H. The results are interpreted on the basis of a model calculation in which radiative recombination of trapped electron-hole...

Electron spin resonance study of interacting donor clusters in phosphorus-doped silicon at 100 GHz and low temperatures (1975)

Morigaki, K., Rosso, M.

ESR experiments have been performed on phosphorus-doped silicon with concentrations ranging from 1.9 x 10 17 cm-3 to 2.8 ×1018 cm-3 at 1.4-4.2 K and 100 GHz. The peak shift of the central ESR line...

Electron spin resonance study of interacting donor clusters in phosphorus-doped silicon at 100 GHz and low temperatures (1975)

Morigaki, K., Rosso, M.

ESR experiments have been performed on phosphorus-doped silicon with concentrations ranging from 1.9 x 10 17 cm-3 to 2.8 ×1018 cm-3 at 1.4-4.2 K and 100 GHz. The peak shift of the central ESR line...

Electron spin resonance study of interacting donor clusters in phosphorus-doped silicon at 100 GHz and low temperatures (1975)

Morigaki, K., Rosso, M.

ESR experiments have been performed on phosphorus-doped silicon with concentrations ranging from 1.9 x 10 17 cm-3 to 2.8 ×1018 cm-3 at 1.4-4.2 K and 100 GHz. The peak shift of the central ESR line...