Efficient green emission from (11(2)over-bar2) InGaN/GaN quantum wells on GaN microfacets probed by scanning near field optical microscopy (2007)
Kawakami, Y,
Nishizuka, K,
Yamada, D,
Kaneta, A,
Funato, M,
Narukawa, Y,
...
Efficient green emission from (11(2)over-bar2) InGaN/GaN quantum wells on GaN microfacets probed by scanning near field optical microscopy (2007)
Kawakami, Y.,
Nishizuka, K.,
Yamada, D.,
Kaneta, A.,
Funato, M.,
Narukawa, Y.,
...
Equation for internal quantum efficiency and its temperature dependence of luminescence, and application to InxGa1-xN/GaN multiple quantum wells (2006)
Sasaki, A,
Shibakawa, S,
Kawakami, Y,
Nishizuka, K,
Narukawa, Y,
Mukai, T
Efficient radiative recombination from < 11(2)over-bar-2 >-oriented InxGa1-xN multiple quantum wells fabricated by the regrowth technique (2004)
Nishizuka, K,
Funato, M,
Kawakami, Y,
Fujita, S,
Narukawa, Y,
Mukai, T
Radiative carrier recombination dependent on temperature and well width of InGaN/GaN single quantum well (2004)
Sasaki, A,
Nishizuka, K,
Wang, T,
Sakai, S,
Kaneta, A,
Kawakami, Y,
...
Efficient radiative recombination from < 11(2)over-bar-2 >-oriented InxGa1-xN multiple quantum wells fabricated by the regrowth technique (2004)
Nishizuka, K,
Funato, M,
Kawakami, Y,
Fujita, S,
Narukawa, Y,
Mukai, T