Elevated Source/Drains for 50nm MOSFETs using HCl-Free Selective Epitaxy (2005)
Waite, A, Lloyd, N, Osman, K, Zhang, W, Emst, T, Achard, H, ...
Elevated Source/Drains for 50nm MOSFETs using HCl-Free Selective Epitaxy (2005)
Waite, A.M., Lloyd, N.S., Osman, K., Zhang, W., Ernst, T., Achard, H., ...
Elevated Source/Drains for 50nm MOSFETs using HCl-Free Selective Epitaxy (2005)
Waite, A, Lloyd, N, Osman, K, Zhang, W, Emst, T, Achard, H, ...
Elevated Source/Drains for 50nm MOSFETs using HCl-Free Selective Epitaxy (2005)
Waite, A, Lloyd, N, Osman, K, Zhang, W, Emst, T, Achard, H, ...
Elevated Source/Drains for 50nm MOSFETs using HCl-Free Selective Epitaxy (2005)
Waite, A.M., Lloyd, N.S., Osman, K., Zhang, W., Ernst, T., Achard, H., ...
Elevated Source/Drains for 50nm MOSFETs using HCl-Free Selective Epitaxy (2005)
Waite, A, Lloyd, N, Osman, K, Zhang, W, Emst, T, Achard, H, ...
Elevated Source/Drains for 50nm MOSFETs using HCl-Free Selective Epitaxy (2005)
Waite, A.M., Lloyd, N.S., Osman, K., Zhang, W., Ernst, T., Achard, H., ...
Elevated Source/Drains for 50nm MOSFETs using HCl-Free Selective Epitaxy (2005)
Waite, A.M., Lloyd, N.S., Osman, K., Zhang, W., Ernst, T., Achard, H., ...
Pengpad, P., Osman, K., Lloyd, N.S., Bonar, J.M., Ashburn, P., Kemhadjian, H.A., ...
A new design for a lateral SiGe HBT has been based on development studies of confined lateral selective epitaxial growth in cavities built into silicon-on-insulator wafers. A design process is...
Pengpad, P., Osman, K., Lloyd, N.S., Bonar, J.M., Ashburn, P., Kemhadjian, H.A., ...
A new design for a lateral SiGe HBT has been based on development studies of confined lateral selective epitaxial growth in cavities built into silicon-on-insulator wafers. A design process is...
Pengpad, P., Osman, K., Lloyd, N.S., Bonar, J.M., Ashburn, P., Kemhadjian, H.A., ...
A new design for a lateral SiGe HBT has been based on development studies of confined lateral selective epitaxial growth in cavities built into silicon-on-insulator wafers. A design process is...
Pengpad, P., Osman, K., Lloyd, N.S., Bonar, J.M., Ashburn, P., Kemhadjian, H.A., ...
A new design for a lateral SiGe HBT has been based on development studies of confined lateral selective epitaxial growth in cavities built into silicon-on-insulator wafers. A design process is...
Zhang, W, Lloyd, N S, Osman, K, Bonar, J M, Hamel, J S, Bagnall, D M
In this paper, an HCI free silicon selective epitaxy process is presented. The low pressure chemical vapor depositon (LPCVD) process uses a mixture of silane and dichlorosilane in hydrogen. The...
Zhang, W, Lloyd, N S, Osman, K, Bonar, J M, Hamel, J S, Bagnall, D M
In this paper, an HCI free silicon selective epitaxy process is presented. The low pressure chemical vapor depositon (LPCVD) process uses a mixture of silane and dichlorosilane in hydrogen. The...
Zhang, W, Lloyd, N S, Osman, K, Bonar, J M, Hamel, J S, Bagnall, D M
In this paper, an HCI free silicon selective epitaxy process is presented. The low pressure chemical vapor depositon (LPCVD) process uses a mixture of silane and dichlorosilane in hydrogen. The...
Zhang, W, Lloyd, N S, Osman, K, Bonar, J M, Hamel, J S, Bagnall, D M
In this paper, an HCI free silicon selective epitaxy process is presented. The low pressure chemical vapor depositon (LPCVD) process uses a mixture of silane and dichlorosilane in hydrogen. The...
Pengpad, P, Osman, K, Lloyd, N S, Bonar, J M, Ashburn, P, Kemhadjian, H A, ...
A new design for a lateral SiGe HBT has been based on development studies of confined lateral selective epitaxial growth in cavities built int silicon-on-insulator wafers. A design process is...
Pengpad, P, Osman, K, Lloyd, N S, Bonar, J M, Ashburn, P, Kemhadjian, H A, ...
A new design for a lateral SiGe HBT has been based on development studies of confined lateral selective epitaxial growth in cavities built int silicon-on-insulator wafers. A design process is...
Pengpad, P, Osman, K, Lloyd, N S, Bonar, J M, Ashburn, P, Kemhadjian, H A, ...
A new design for a lateral SiGe HBT has been based on development studies of confined lateral selective epitaxial growth in cavities built int silicon-on-insulator wafers. A design process is...
Pengpad, P, Osman, K, Lloyd, N S, Bonar, J M, Ashburn, P, Kemhadjian, H A, ...
A new design for a lateral SiGe HBT has been based on development studies of confined lateral selective epitaxial growth in cavities built int silicon-on-insulator wafers. A design process is...
Confined epitaxial growth by low-pressure chemical vapor deposition (2003)
Osman, K, Lloyd, N S, Bonar, J M, Kemhadjian, H A, Bagnall, D M, Hamel, J S
Confined and unconfined selective epitaxial growth using SiH4 and a novel DCS/SIH4/H2 mixture by low pressure chemical vapor deposition (LPCVD) have been studied. Results indicate that DCS/SiH4/H2...
Confined epitaxial growth by low-pressure chemical vapor deposition (2003)
Osman, K, Lloyd, N S, Bonar, J M, Kemhadjian, H A, Bagnall, D M, Hamel, J S
Confined and unconfined selective epitaxial growth using SiH4 and a novel DCS/SIH4/H2 mixture by low pressure chemical vapor deposition (LPCVD) have been studied. Results indicate that DCS/SiH4/H2...
Confined epitaxial growth by low-pressure chemical vapor deposition (2003)
Osman, K, Lloyd, N S, Bonar, J M, Kemhadjian, H A, Bagnall, D M, Hamel, J S
Confined and unconfined selective epitaxial growth using SiH4 and a novel DCS/SIH4/H2 mixture by low pressure chemical vapor deposition (LPCVD) have been studied. Results indicate that DCS/SiH4/H2...
Confined epitaxial growth by low-pressure chemical vapor deposition (2003)
Osman, K, Lloyd, N S, Bonar, J M, Kemhadjian, H A, Bagnall, D M, Hamel, J S
Confined and unconfined selective epitaxial growth using SiH4 and a novel DCS/SIH4/H2 mixture by low pressure chemical vapor deposition (LPCVD) have been studied. Results indicate that DCS/SiH4/H2...
Cross-talk suppression faraday cage structure in silicon-on-insulator (2002)
Stefanou, Stefanos, Hamel, John, Bain, P, Armstrong, B.M, Gamble, H S, Kraft, Michael, ...
Cross-talk suppression faraday cage structure in silicon-on-insulator (2002)
Stefanou, Stefanos, Hamel, John, Bain, P, Armstrong, B.M, Gamble, H S, Kraft, Michael, ...
Cross-talk suppression faraday cage structure in silicon-on-insulator (2002)
Stefanou, Stefanos, Hamel, John, Bain, P, Armstrong, B.M, Gamble, H S, Kraft, Michael, ...