K. P. Korona

Publication List Details

Period

1998 - 2006

Number

18

Co-Authors

Manganese as a fast charge carrier trapping center in InP (2006)

Korona, K. P., Wysmołek, A., Kamińska, M., Twardowski, A., Piersa, M., Palczewska, M., ...

Significant influence of Mn centers on the radiative and nonradiative recombinations in Czochralski-grown InP:Mn crystals was observed. Time-resolved measurements showed that manganese recombination...

Reply to "Comment on 'Recombination of excitons bound to oxygen and silicon donors in freestanding GaN' " (2004)

Wysmołek, A., Korona, K. P., Stępniewski, R., Baranowski, J. M., Bloniarz, J., Potemski, M., ...

In their Comment on our publication [Phys. Rev. B 66, 245317 (2002)], Freitas criticize our identification of donor-bound exciton transitions and the analysis of two-electron satellite emission...

Properties of zinc acceptor and exciton bound to zinc in ammonothermal GaN (2003)

Korona, K. P., Doradzinski, R., Palczewska, M., Pietras, M., Kaminska, M., Kuhl, J.

Time-resolved photoluminescence (TRPL) and electron paramagnetic resonance (EPR) studies of Zn acceptor in GaN are presented. The EPR measurements revealed a strong line, which was ascribed to either...

Dynamics of trapping on donors and relaxation of the B-exciton in GaN (2003)

Korona, K. P., Wysmołek, A., Stępniewski, R., Potemski, M., Kuhl, J., Baranowski, J. M., ...

There are three exciton branches in wurzite-GaN: A, B and C. Here, time-resolved photoluminescence and magneto-optic spectroscopy of the B-exciton are presented, both free (FXB) and bound to donor...

Dynamics of excitonic recombination and interactions in homoepitaxial GaN (2002)

Korona, K. P.

The dynamics of free and bound excitons and their interactions have been analyzed from the results of time-resolved photoluminescence (PL) in GaN layers fabricated by metalorganic chemical vapor...

Influence of the substrate on the photo-luminescence dynamics in GaInN epilayers (2002)

Korona, K. P., Prystawko, P., Leszczynski, M., Perlin, P., Suski, T., Grzegory, I., ...

We present results of temperature-dependent, time-resolved photoluminescence (PL) measurements on a set of Ga1-xInxN (x congruent to 0.08) layers grown at the same conditions on three different...

Recombination of excitons bound to oxygen and silicon donors in freestanding GaN (2002)

Wysmołek, A., Korona, K. P., Stępniewski, R., Baranowski, J. M., Bloniarz, J., Potemski, M., ...

The neutral donor bound exciton recombination processes in freestanding GaN have been studied. The photoluminescence spectrum shows emission lines related to silicon and oxygen donors. Time-resolved...