Lateral Field Effect in Focused-Ion-Beam Written in-Plane-Gated Systems, (9999)
Wieck, A. D., Fischer, A., Ploog, K.
The present technology of microstructured devices is based on lithographic processes, which use masks and photoresist layers. The power of this techniques is the parallel production of many...
In-plane optical anisotropy due to conduction band electron wavefunctions (2007)
Łusakowski, J., Sakowicz, M., Friedland, K. J., Hey, R., Ploog, K.
Photoluminescence measurements were carried out on Be $\delta$-doped GaAs/Al$_{0.33}$Ga$_{0.67}$As heterostructure at 1.6 K in magnetic fields ($B$) up to 5 T. Luminescence originating from...
Mani, R. G., Johnson, W. B., Umansky, V., Narayanamurti, V., Ploog, K.
An experimental study of the high mobility GaAs/AlGaAs system at large-$\nu$ indicates several distinct phase relations between the oscillatory diagonal- and Hall- resistances, and suggests a new...
Magnetophonon resonance in high-density high-mobility quantum well systems (2004)
Faugeras, C., Maude, D.K., Martinez, G., Rigal, L.B., Proust, C., ...
We have investigated the magnetophonon resonance ~MPR! effect in a series of single GaAs quantum well samples which are symmetrically modulation doped in the adjacent short period AlAs/GaAs...
Time-Resolved Studies of Exciton Recombination in Direct-Gap GaAs/AlAs Superlattices (2002)
Litovchenko, V. G., Korbutyak, D. V., Krylyuk, S. G., Grahn, H. T., Ploog, K.
The temperature dependence of the recombination dynamics of excitons was investigated by time-resolved photoluminescence spectroscopy in direct-gap GaAs/AlAs superlattices. Peculiarities of excitonic...
Dorozhkin, S. I., Smet, J. H., Von Klitzing, K., Umansky, V., Wegscheider, W., Haug, R. J., ...
It is well-established that the electron-electron interaction strongly affects the compressibility of a two-dimensional electron system at zero magnetic field and even leads to the negative sign of...
Coupled Bloch-phonon oscillations in GaAs/AlGaAs superlattices: theory and experiment (2000)
T. Dekorsy, A. Bartels, H. Kurz, A. W. Ghosh, K. Ploog
We report on the femtosecond dynamics of coherent Bloch oscillations in GaAs=Al x Ga 1-x As superlattices. In a superlattice with a miniband width equal to the optical phonon energy of GaAs the Bloch...
Influence of the dielectric environment on the radiative lifetime of quantum-well excitons (2000)
Ammerlahn, D., Grote, B., Koch, S. W., Kuhl, J., Hübner, M., Hey, R., ...
Coupled Bloch-phonon oscillations in semiconductor superlattices (2000)
Dekorsy, T., Bartels, A., Kurz, H., Köhler, K., Hey, R., Ploog, K.
We investigate coherent Bloch oscillations in GaAs/AlxGa(1-x)As superlattices with electronic miniband widths larger than the optical phonon energy. In these superlattices the Bloch frequency can be...
Coupled Bloch-phonon oscillations in GaAs/AlGaAs superlattices: theory and experiment (2000)
Dekorsy, T., Bartels, A., Kurz, H., Ghosh, A., Jönsson, L., Wilkens, J., ...
We report on the femtosecond dynamics of coherent Bloch oscillations in GaAs/Al(x)Ga(l-x)As superlattices. In a superlattice with a miniband width equal to the optical phonon energy of GaAs the Bloch...
Thermal conductivity of GaAs/AlAs superlattices. (1999)
Capinski, W. S., Cardona, M., Katzer, D. S., Maris, H. J., Ploog, K., Ruf, T.
IV-2 ultrafast coherent dynamics of radiatively coupled excitons in multiple quantum wells. (1999)
Kuhl, J., Hübner, M., Ammerlahn, D., Grote, B., Stroucken, T., Haas, S., ...
Superradiant exciton/light coupling in semiconductor heterostructures. Part 2. Experiments. (1999)
Kuhl, J., Hübner, M., Ammerlahn, D., Stroucken, T., Grote, B., Haas, S., ...
Dynamics of spin polarization in a two-dimensional electron gas. (1999)
Gershoni, D., Potemski, M., Gravier, L., Perez, E., Martin, M. D., Vina, L., ...
Spin polarization of an optically pumped electron gas. (1999)
Potemski, M., Perez, E., Martin, D., Vina, L., Gravier, L., Fischer, A., ...
Transition from superradiant free-polarization decay to subradiant photon-echo. (1998)
Hübner, M., Kuhl, J., Grote, B., Stroucken, T., Koch, S. W., Hey, R., ...
Heteroepitaxy of Cubic GaN (1997)
Trampert, A., Brandt, O., Yang, H., Ploog, K.
We report on the epitaxial growth and the microstructure of cubic CaN. The layers investigated are deposited by plasma-assisted molecular beam epitaxy on GaAs (001) and (311)A substrates....
Heteroepitaxy of Cubic GaN (1997)
Trampert, A., Brandt, O., Yang, H., Ploog, K.
We report on the epitaxial growth and the microstructure of cubic CaN. The layers investigated are deposited by plasma-assisted molecular beam epitaxy on GaAs (001) and (311)A substrates....
Heteroepitaxy of Cubic GaN (1997)
Trampert, A., Brandt, O., Yang, H., Ploog, K.
We report on the epitaxial growth and the microstructure of cubic CaN. The layers investigated are deposited by plasma-assisted molecular beam epitaxy on GaAs (001) and (311)A substrates....
Spin flip of excitons in GaAs quantum wells (1997)
Snoke, D.W., Rühle, W.W., Köhler, K., Ploog, K.
We report measurements of the rates of conversion from J = 2 excitons to J = 1 excitons, as well as conversion from right-handed J = 1 excitons to left-handed J = 1 excitons, and measurement of the...
Spin splitting in a polarized quasi-two-dimensional exciton gas (1996)
Vina, L., Munoz, L., Perez, E., Fernandez-Rossier, J., Tejedor, C., Ploog, K.
We have observed a large spin splitting between "spin" $+1$ and $-1$ heavy-hole excitons, having unbalanced populations, in undoped GaAs/AlAs quantum wells in the absence of any external magnetic...
Role of excitons in double Raman resonances in GaAs quantum wells (1996)
Ploog, K., Berendschot, T., Cantarero, A., Cros, A., Calleja, J.M., ...
Ultrafast coherent carrier control in quantum wells (1996)
Heberle, A.P., Baumberg, J.J., Köhler, K., Ploog, K.
We demonstrate femtosecond coherent control of excitons in quantum wells with phase-locked pairs of 100 fs infrared pulses. Co-polarised pulses allow control of exciton density and coherent...
Ultrafast coherent carrier control in quantum wells (1996)
Baumberg, J.J., Heberle, A.P., Köhler, K., Ploog, K.
We report the coherent control of excitons in quantum wells with pairs of 150-fs infrared pulses. Oscillations in the exciton density versus inter-pump-pulse separation, which correspond to the...
Tailoring of Si doping layers in GaAs during molecular beam epitaxy (1996)
Däweritz, L., Kostial, H., Ramsteiner, M., Klann, R., Schützendübe, P., Stahrenberg, K., ...
For Si delta -like doping of GaAs lateral ordering processes and segregation in growth direction have been investigated in real time by monitoring long-range and short-range ordering effects using...
Real-time study of dopant incorporation and segregation during MBE growth of GaAs(001):Si (1996)
Däweritz, L., Schützendübe, P., Stahrenberg, K., Maier, M., Ploog, K.
The incorporation as well as segregation of dopant atoms during Si delta-doping of GaAs (001) has been studied in real-time by using reflection high-energy electron diffraction (RHEED) and...
Magneto-Raman Resonances in Quantum-Wells - Excitonic Effects (1995)
Ploog, K., Cantarero, A., Cros, A., Calleja, J.M., ...
High carbon doping of Ga1-xInxAs /x about 0.01/ grown by molecular beam epitaxy (1995)
Mazuelas, A., Maier, M., Wagner, J., Fischer, A., Trampert, A., Ploog, K.
We have grown layers of Ga1-x Inx As: C (x ~ 0.01) on (100) GaAs by molecular beam epitaxy. As C source a graphite filament was used. Structures coherent with the substrate were obtained by adjusting...
Four-wave-mixing theory beyond the semiconductor Bloch equations (1995)
Axt, V.M., Stahl, A., Mayer, E.J., Haring Bolivar, P., Nüsse, S., Ploog, K., ...
Four-wave-mixing (FWM) experiments using a dynamical density matrix model of the semiconductor band edge are discussed. Higher-order correlation functions are retained which arc neglected in the...
Excitonic effects in miniband and Wannier-Stark absorption spectra (1995)
Linder, N., Schmidt, K.H., Geisselbrecht, W., Döhler, G.H., Grahn, H.T., Ploog, K., ...
We compare experimental and theoretical electroabsorption spectra of strongly coupled GaAs/AlAs superlattices for the full field range from the Franz-Keldysh (low field) to the Wannier-Stark (high...
Determination of the bonding of carbon acceptors in InxGa1-xAs for x smallr than 0.1 (1995)
Pritchard, R.E., Newman, R.C., Wagner, J., Maier, M., Mazuelas, A., Lane, P.A., ...
The local environment of CdeepAs acceptors in IndeepxGadeep1-deepxAs has been determined from the localized vibrational modes (LVMs) of both isolated CdeepAs impurities and H-CdeepAs pairs using...
Coexistence of the Franz-Keldysh and Wannier-Stark effect in semiconductor superlattices (1995)
Linder, N., Schmidt, K.H., Geisselbrecht, W., Döhler, G.H., Grahn, H.T., Ploog, K., ...
The optical absorption of short-period semiconductor superlattices with an electric field perpendicular to the layer plane is studied. The applied fields cover the range from the "miniband...
Schneider, H., Wagner, J., Ploog, K.
We have studied the electric field dependence of the photocurrent and of the excitonic photoluminescence (PL) associated with the first and second conduction subbands in weakly coupled GaAs/AlAs...
Resonance effects in first- and second-order Raman scattering from AlAs (1994)
Wagner, J., Fischer, A., Braun, W., Ploog, K.
First- and second-order Raman scattering has been studied in epitaxial AlAs grown by solid-source molecular-beam epitaxy. A strong resonant enhancement of dipole-forbidden one-LO and intrinsic...
Wagner, J., Calleja, J.M., Mestres, N., Richards, D., Fischer, A., Ploog, K.
A centre Si delta-doped GaAs/Al0.33Ga0.67As double heterostructure has been studied by photoluminescence excitation spectroscopy in perpendicular magnetic fields up to 13.5 T. Landau level...
A local vibrational mode investigation of p-type Si-doped GaAs (1994)
Ashwin, M.J., Fahy, M.R., Newman, R.C., Wagner, J., Robbie, D.A., Silier, I., ...
Infrared absorption (IR) and Raman scattering measurements have been made of the localized vibration modes (LVM) due to defects incorporating silicon impurities in p-type Si-doped GaAs grown by...
Infrared and Raman studies of carbon impurities in highly doped MBE AlAs-C. (1994)
Davidson, B.R., Newman, R.C., Pritchard, R.E., Robbie, D.A., Sangster, M.J.L., Wagner, J., ...
Infrared absorption measurements of heavily carbon doped p-type AlAs have revealed a localized vibrational mode at 631.6 cmhigh-1 which appears as a Fano profile in uncompensated material. Raman...
Incorporation of silicon in -311-A and -111-A GaAs grown by molecular beam epitaxy. (1994)
Wagner, J., Ramsteiner, M., Ashwin, M.J., Fahy, M.R., Newman, R.C., Braun, W., ...
The incorporation of silicon into GaAs grown by molecular beam epitaxy on Ga-terminated (311)A and (111)A surfaces has been investigated by local vibrational mode (LVM) Raman and absorption...
Wagner, J., Richards, D., Schneider, H., Fischer, A., Ploog, K.
We have studied the photoluminescence (PL) spectrum, and the strength of the Fermi edge singularity (FES) in that spectrum, of the two-dimensional hole gas (2DHG) formed in GaAs/AlsubxGasub1-xAs...
Schmidt, K.H., Linder, N., Döhler, G.H., Grahn, H.T., Ploog, K., Schneider, H.
Using differential photocurrent spectroscopy we have studied the field dependent absorption in a GaAs/AlAs superlattices, which have only one monolayer AlAs barriers, with unpreceded dynamical...
Dynamics of excitonic photoluminescence lineshape in narrow GaAs single quantum wells (1993)
Fujiwara, K., Cingolani, R., Ploog, K.
Dynamics of excitonic photoluminescence (PL) lineshape in narrow GaAs single quantum wells is investigated by measuring transient PL spectra in the picosecond time domains under direct excitation. We...
Optical properties of excitons in GaAs quantum wires (1993)
Rinaldi, R., Cingolani, R., Ferrara, M., Marti, U., Martin, D., Reinhart, F., ...
We report the result of a detailed spectroscopic investigation of the optical properties of excitons in rectangular (etched) and V-shaped (grown on non-planar substrates) GaAs quantum wires. High...
Two-photon absorption in low-dimensional heterostructures (1993)
Cingolani, R., Lepore, M., Tommasi, R., Catalano, I., Lage, H., Heitmann, D., ...
We briefly review the physics of two-photon absorption processes in low-dimensional systems. The anisotropic selection rules of the multiphoton absorption in quantum wells and quantum wires are...
Dynamics of excitonic photoluminescence lineshape in narrow GaAs single quantum wells (1993)
Fujiwara, K., Cingolani, R., Ploog, K.
Dynamics of excitonic photoluminescence (PL) lineshape in narrow GaAs single quantum wells is investigated by measuring transient PL spectra in the picosecond time domains under direct excitation. We...
Optical properties of excitons in GaAs quantum wires (1993)
Rinaldi, R., Cingolani, R., Ferrara, M., Marti, U., Martin, D., Reinhart, F., ...
We report the result of a detailed spectroscopic investigation of the optical properties of excitons in rectangular (etched) and V-shaped (grown on non-planar substrates) GaAs quantum wires. High...
Two-photon absorption in low-dimensional heterostructures (1993)
Cingolani, R., Lepore, M., Tommasi, R., Catalano, I., Lage, H., Heitmann, D., ...
We briefly review the physics of two-photon absorption processes in low-dimensional systems. The anisotropic selection rules of the multiphoton absorption in quantum wells and quantum wires are...
Dynamics of excitonic photoluminescence lineshape in narrow GaAs single quantum wells (1993)
Fujiwara, K., Cingolani, R., Ploog, K.
Dynamics of excitonic photoluminescence (PL) lineshape in narrow GaAs single quantum wells is investigated by measuring transient PL spectra in the picosecond time domains under direct excitation. We...
Optical properties of excitons in GaAs quantum wires (1993)
Rinaldi, R., Cingolani, R., Ferrara, M., Marti, U., Martin, D., Reinhart, F., ...
We report the result of a detailed spectroscopic investigation of the optical properties of excitons in rectangular (etched) and V-shaped (grown on non-planar substrates) GaAs quantum wires. High...
Two-photon absorption in low-dimensional heterostructures (1993)
Cingolani, R., Lepore, M., Tommasi, R., Catalano, I., Lage, H., Heitmann, D., ...
We briefly review the physics of two-photon absorption processes in low-dimensional systems. The anisotropic selection rules of the multiphoton absorption in quantum wells and quantum wires are...
Two-dimensional hole gas and Fermi-edge singularity in Be delta-doped GaAs (1993)
Richards, D., Schneider, H., Hendorfer, G., Maier, M., Fischer, A., Ploog, K., ...
The subband structure of the quasi-two-dimensional hole gas (2DHG) formed at a single Be Delta-doped layer in GaAs has been studied by photoluminescence spectroscopy. To confine the photogenerated...
Resonant Raman scattering and photoluminescence at the E0 band gap of carbon-doped AlAs. (1993)
Fischer, A., Ploog, K., Wagner, J.
Carbon-doped AlAs grown by solid source molecular beam epitaxy has been studied by Raman and photoluminescence spectroscopy. Doping levels exceeding 2x10high19cmhighminus3 have been obtained using a...
Schneider, H., Ploog, K., Fischer, A., Fujiwara, K., Wagner, J.
GaAs/AlAs superlattices with 1, 2, 3, and 4 monolayer (ML) wide AlAs barriers have been studied by photocurrent and Raman spectroscopy in an electric field parallel to the growth direction. The...
Schneider, H., Richards, D., Fischer, A., Ploog, K., Wagner, J.
Spin-relaxation dynamics of electrons have been studied in p-type Delta-doped GaAs:Be/AlsubxGasub1minusxAs double heterostructures by time-resolved photoluminescence polarization measurements. A...
Nucleation, relaxation and redistribution of Si layers in GaAs. (1993)
Brandt, O., Crook, G., Ploog, K., Bierwolf, R., Hohenstein, M., Maier, M., ...
We study the structural properties of Si layers of different thickness (0.1-1.3 nm) inserted in GaAs by solidsource molecular beam epitaxy. Using high- resolution electron microscopy, we demonstrate...
Line shape of electroreflectance spectra in semiconductor superlattices (1993)
Behn, U., Grahn, H.T., Ploog, K., Schneider, H.
Electroreflectance (ER) spectra of GaAs-AlAs superlattices in a perpendicular electric field exhibit complicated line shapes that cannot be explained by the presence of heavy-hole and light-hole...
The lattice sites of carbon in highly doped AlAs:C grown by molecular beam epitaxy. (1993)
Davidson, B.R., Newman, R.C., Robbie, D.A., Sangster, M.J.L., Fischer, A., Ploog, K., ...
Infrared absorption measurements of heavily carbon-doped AlAs have revealed a localized vibrational mode at 630 cmhigh-1 which appears as a Fano profile. Raman scattering measurements show a...
Transient Optical Properties of the Quasi-Two-Dimensional Electron-Hole Plasma, (1992)
Cingolani, R., Kalt, H., Ploog, K.
We investigate the time evolution of the luminescence emitted by a high density 2D electron-hole plasma (EHP) and its optical properties in magnetic fields up to 20 T in GaAs/Al Gal-xAs multiple...
Ultrafast metal-semiconductor-metal photodiodes fabricated on low-temperature GaAs. (1992)
Klingenstein, M., Kuhl, J., Nötzel, R., Hülsmann, A., Schneider, J., Köhler, K., ...
GaAs metal-semiconductor-metal photodiodes fabricated on GaAs grown at low substrate temperatures (200 degree C) have been investigated in the time domain by electro-optic sampling. It could be shown...
Time-resolved four-wave mixing in GaAs/AlAs quantum well structures. (1992)
Koch, M., Feldmann, J., Plessen, G. Von, Meier, T., Schulze, A., Thomas, P., ...
Femtosecond nonlinear laser spectroscopy is applied to study the dynamics of coherent optical excitations in semiconductors. In particular, excitonic excitations in quantum wells and superlattice...
Bachem, K.H., Mörsch, G., Kamp, M., Fischer, A., Lauterbach, T., Maier, M., ...
Heavily carbon-doped GaAs layers have been studied by Raman spectroscopy of localized vibrational modes. Films grown by three different epitaxial techniques - namely molecular-beam epitaxy,...
Picosecond photodetectors fabricated on low temperature GaAs (1992)
Klingenstein, M., Kuhl, J., Nötzel, R., Ploog, K., Rosenzweig, J., Moglestue, C., ...
GaAs metal-semiconductor-metal photodiodes fabricated on GaAs grown at low substrate temperatures (200 degree C) have been investigated in the time domain by electro-optic sampling. It could be...
Overhauser shift and nuclear spin relaxation in Al x Ga 1-x As/GaAs heterostructures. (1992)
Kamp, G., Obloh, H., Schneider, J., Weimann, G., Ploog, K.
In low-dimensional systems dynamical nuclear polarization is a sensitive tool for the study of electron-nuclear interaction. We report on Overhauser-shift experiments on the 2DEG of...