Ultra-high pressure MOCVD: a supercritical route to compound semiconductor materials (2008)
Wilson, James William, Yang, Jixin, Hyde, Jason R., Smith, David C., Howdle, Steven M., Mallik, Kanad, ...
The deposition of thin films of materials on to and in to preformed, high aspect ratio, template materials, is of significant interest to the semiconductor community. Damascene processes are vital to...
Semi-insulating silicon by deep level doping for radio frequency applications (2006)
Mallik, Kanad, DeGroot, C.H., Ashburn, P., Wilshaw, P.R.
Deep level Mn doping by ion implantation and RTA have been used for the first time to make very high resistivity Czochralski silicon substrates up to 10 kΩcm and on the average, resistivity...
Semi-insulating silicon by deep level doping for radio frequency applications (2006)
Mallik, Kanad, DeGroot, C.H., Ashburn, P., Wilshaw, P.R.
Deep level Mn doping by ion implantation and RTA have been used for the first time to make very high resistivity Czochralski silicon substrates up to 10 kΩcm and on the average, resistivity...
Semi-insulating silicon by deep level doping for radio frequency applications (2006)
Mallik, Kanad, DeGroot, C.H., Ashburn, P., Wilshaw, P.R.
Deep level Mn doping by ion implantation and RTA have been used for the first time to make very high resistivity Czochralski silicon substrates up to 10 kΩcm and on the average, resistivity...
Semi-insulating silicon by deep level doping for radio frequency applications (2006)
Mallik, Kanad, DeGroot, C.H., Ashburn, P., Wilshaw, P.R.
Deep level Mn doping by ion implantation and RTA have been used for the first time to make very high resistivity Czochralski silicon substrates up to 10 kΩcm and on the average, resistivity...
Chong, Lit Ho, Mallik, Kanad, De Groot, C. H.
We propose a new field-effect transistor, the vertical metal insulator semiconductor tunnel transistor (VMISTT) which operates using gate modulation of the Fowler-Nordheim tunneling current through a...
Chong, Lit Ho, Mallik, Kanad, De Groot, C. H.
We propose a new field-effect transistor, the vertical metal insulator semiconductor tunnel transistor (VMISTT) which operates using gate modulation of the Fowler-Nordheim tunneling current through a...
Chong, Lit Ho, Mallik, Kanad, De Groot, C. H.
We propose a new field-effect transistor, the vertical metal insulator semiconductor tunnel transistor (VMISTT) which operates using gate modulation of the Fowler-Nordheim tunneling current through a...
Chong, Lit Ho, Mallik, Kanad, De Groot, C. H.
We propose a new field-effect transistor, the vertical metal insulator semiconductor tunnel transistor (VMISTT) which operates using gate modulation of the Fowler-Nordheim tunneling current through a...
Chong, Lit Ho, Mallik, Kanad, De Groot, C. H.
We propose a new field-effect transistor, the vertical metal insulator semiconductor tunnel transistor (VMISTT) which operates using gate modulation of the Fowler-Nordheim tunneling current through a...
Schottky diode back contacts for high frequency capacitance studies on semiconductors (2004)
Mallik, Kanad, Falster, R.J., Wilshaw, P.R.
A technique using large area Schottky diode back contacts has been developed to enable high frequency capacitance studies to be carried out on semiconductors without the need to fabricate high...
Schottky diode back contacts for high frequency capacitance studies on semiconductors (2004)
Mallik, Kanad, Falster, R.J., Wilshaw, P.R.
A technique using large area Schottky diode back contacts has been developed to enable high frequency capacitance studies to be carried out on semiconductors without the need to fabricate high...
Schottky diode back contacts for high frequency capacitance studies on semiconductors (2004)
Mallik, Kanad, Falster, R.J., Wilshaw, P.R.
A technique using large area Schottky diode back contacts has been developed to enable high frequency capacitance studies to be carried out on semiconductors without the need to fabricate high...
Schottky diode back contacts for high frequency capacitance studies on semiconductors (2004)
Mallik, Kanad, Falster, R.J., Wilshaw, P.R.
A technique using large area Schottky diode back contacts has been developed to enable high frequency capacitance studies to be carried out on semiconductors without the need to fabricate high...
Schottky diode back contacts for high frequency capacitance studies on semiconductors (2004)
Mallik, Kanad, Falster, R.J., Wilshaw, P.R.
A technique using large area Schottky diode back contacts has been developed to enable high frequency capacitance studies to be carried out on semiconductors without the need to fabricate high...
Mallik, Kanad, Chong, Lit Ho, De Groot, Kees
We propose a new field effect transistor, the vertical metal-oxide tunnel transistor (VMOTT) which operates using gate modulation of the Fowler-Nordheim tunneling current through the channel oxide....
Mallik, Kanad, Chong, Lit Ho, De Groot, Kees
We propose a new field effect transistor, the vertical metal-oxide tunnel transistor (VMOTT) which operates using gate modulation of the Fowler-Nordheim tunneling current through the channel oxide....
Mallik, Kanad, Chong, Lit Ho, De Groot, Kees
We propose a new field effect transistor, the vertical metal-oxide tunnel transistor (VMOTT) which operates using gate modulation of the Fowler-Nordheim tunneling current through the channel oxide....
Mallik, Kanad, Chong, Lit Ho, De Groot, Kees
We propose a new field effect transistor, the vertical metal-oxide tunnel transistor (VMOTT) which operates using gate modulation of the Fowler-Nordheim tunneling current through the channel oxide....
Near-band gap luminescence at room temperature from dislocations in silicon (2003)
Stowe, D.J., Galloway, S.A., Senkader, S., Mallik, Kanad, Falster, R.J., Wilshaw, P.R.
Cathodoluminescence (CL) has been used to investigate room-temperature light emission from dislocations generated by ion-implantation. Czochralski silicon wafers were implanted with boron and silicon...
Near-band gap luminescence at room temperature from dislocations in silicon (2003)
Stowe, D.J., Galloway, S.A., Senkader, S., Mallik, Kanad, Falster, R.J., Wilshaw, P.R.
Cathodoluminescence (CL) has been used to investigate room-temperature light emission from dislocations generated by ion-implantation. Czochralski silicon wafers were implanted with boron and silicon...
Near-band gap luminescence at room temperature from dislocations in silicon (2003)
Stowe, D.J., Galloway, S.A., Senkader, S., Mallik, Kanad, Falster, R.J., Wilshaw, P.R.
Cathodoluminescence (CL) has been used to investigate room-temperature light emission from dislocations generated by ion-implantation. Czochralski silicon wafers were implanted with boron and silicon...
Near-band gap luminescence at room temperature from dislocations in silicon (2003)
Stowe, D.J., Galloway, S.A., Senkader, S., Mallik, Kanad, Falster, R.J., Wilshaw, P.R.
Cathodoluminescence (CL) has been used to investigate room-temperature light emission from dislocations generated by ion-implantation. Czochralski silicon wafers were implanted with boron and silicon...
Near-band gap luminescence at room temperature from dislocations in silicon (2003)
Stowe, D.J., Galloway, S.A., Senkader, S., Mallik, Kanad, Falster, R.J., Wilshaw, P.R.
Cathodoluminescence (CL) has been used to investigate room-temperature light emission from dislocations generated by ion-implantation. Czochralski silicon wafers were implanted with boron and silicon...
'Semi-insulating' silicon using deep level impurity doping: problems and potential (2003)
Mallik, Kanad, Falster, R.J., Wilshaw, P.R.
The possibility of using deep level impurities to obtain 'semi-insulating' Czochralski silicon of near-intrinsic resistivity for microwave applications has been analysed. It is shown that co-doping...
'Semi-insulating' silicon using deep level impurity doping: problems and potential (2003)
Mallik, Kanad, Falster, R.J., Wilshaw, P.R.
The possibility of using deep level impurities to obtain 'semi-insulating' Czochralski silicon of near-intrinsic resistivity for microwave applications has been analysed. It is shown that co-doping...
'Semi-insulating' silicon using deep level impurity doping: problems and potential (2003)
Mallik, Kanad, Falster, R.J., Wilshaw, P.R.
The possibility of using deep level impurities to obtain 'semi-insulating' Czochralski silicon of near-intrinsic resistivity for microwave applications has been analysed. It is shown that co-doping...
'Semi-insulating' silicon using deep level impurity doping: problems and potential (2003)
Mallik, Kanad, Falster, R.J., Wilshaw, P.R.
The possibility of using deep level impurities to obtain 'semi-insulating' Czochralski silicon of near-intrinsic resistivity for microwave applications has been analysed. It is shown that co-doping...
'Semi-insulating' silicon using deep level impurity doping: problems and potential (2003)
Mallik, Kanad, Falster, R.J., Wilshaw, P.R.
The possibility of using deep level impurities to obtain 'semi-insulating' Czochralski silicon of near-intrinsic resistivity for microwave applications has been analysed. It is shown that co-doping...
Fabrication of nanocrystalline aluminium islands using double-surface anodization (2003)
Booth, S.E., Marsh, C.D., Mallik, Kanad, Baranauskas, V., Sykes, J.M., Wilshaw, P.R.
We report a technique of fabrication of Al nanoislands of dimensions as small as 3 nm. Thin Al foils were anodized from both the surfaces under conditions suitable for the growth of porous alumina....
Fabrication of nanocrystalline aluminium islands using double-surface anodization (2003)
Booth, S.E., Marsh, C.D., Mallik, Kanad, Baranauskas, V., Sykes, J.M., Wilshaw, P.R.
We report a technique of fabrication of Al nanoislands of dimensions as small as 3 nm. Thin Al foils were anodized from both the surfaces under conditions suitable for the growth of porous alumina....
Fabrication of nanocrystalline aluminium islands using double-surface anodization (2003)
Booth, S.E., Marsh, C.D., Mallik, Kanad, Baranauskas, V., Sykes, J.M., Wilshaw, P.R.
We report a technique of fabrication of Al nanoislands of dimensions as small as 3 nm. Thin Al foils were anodized from both the surfaces under conditions suitable for the growth of porous alumina....
Fabrication of nanocrystalline aluminium islands using double-surface anodization (2003)
Booth, S.E., Marsh, C.D., Mallik, Kanad, Baranauskas, V., Sykes, J.M., Wilshaw, P.R.
We report a technique of fabrication of Al nanoislands of dimensions as small as 3 nm. Thin Al foils were anodized from both the surfaces under conditions suitable for the growth of porous alumina....
Fabrication of nanocrystalline aluminium islands using double-surface anodization (2003)
Booth, S.E., Marsh, C.D., Mallik, Kanad, Baranauskas, V., Sykes, J.M., Wilshaw, P.R.
We report a technique of fabrication of Al nanoislands of dimensions as small as 3 nm. Thin Al foils were anodized from both the surfaces under conditions suitable for the growth of porous alumina....
It is shown that the avalanche multiplication factor of transistors, which plays a key role in the functioning of the Marx bank circuit, can be considerably enhanced when the collector has a Gaussian...
It is shown that the avalanche multiplication factor of transistors, which plays a key role in the functioning of the Marx bank circuit, can be considerably enhanced when the collector has a Gaussian...
It is shown that the avalanche multiplication factor of transistors, which plays a key role in the functioning of the Marx bank circuit, can be considerably enhanced when the collector has a Gaussian...
It is shown that the avalanche multiplication factor of transistors, which plays a key role in the functioning of the Marx bank circuit, can be considerably enhanced when the collector has a Gaussian...
The theory of operation of transistorized Marx bank circuits. (1999)
A theory of operation of transistorized Marx bank circuits has been formulated. It has been shown quantitatively that the current-mode second breakdown of transistors is the basic phenomenon...
The theory of operation of transistorized Marx bank circuits. (1999)
A theory of operation of transistorized Marx bank circuits has been formulated. It has been shown quantitatively that the current-mode second breakdown of transistors is the basic phenomenon...
The theory of operation of transistorized Marx bank circuits. (1999)
A theory of operation of transistorized Marx bank circuits has been formulated. It has been shown quantitatively that the current-mode second breakdown of transistors is the basic phenomenon...
The theory of operation of transistorized Marx bank circuits. (1999)
A theory of operation of transistorized Marx bank circuits has been formulated. It has been shown quantitatively that the current-mode second breakdown of transistors is the basic phenomenon...
Chatterjee, A, Mallik, Kanad, Oak, S.M.
The principle of operation of the transistor-based Marx bank circuit has been examined. It was experimentally observed that stage-wise increase of reverse voltage does not occur. This cannot be...
Chatterjee, A, Mallik, Kanad, Oak, S.M.
The principle of operation of the transistor-based Marx bank circuit has been examined. It was experimentally observed that stage-wise increase of reverse voltage does not occur. This cannot be...
Chatterjee, A, Mallik, Kanad, Oak, S.M.
The principle of operation of the transistor-based Marx bank circuit has been examined. It was experimentally observed that stage-wise increase of reverse voltage does not occur. This cannot be...
Chatterjee, A, Mallik, Kanad, Oak, S.M.
The principle of operation of the transistor-based Marx bank circuit has been examined. It was experimentally observed that stage-wise increase of reverse voltage does not occur. This cannot be...