Epitaxial GaN Nanorods via Catalytic Capillary Condensation (2005)
Seo, H. W., Chen, Q. Y., Tu, L. W., Hsiao, C. L., Iliev, M. N., Chu, W. K.
Intrinsic catalytic process by capillary condensation of Ga-atoms into nanotrenches, formed among impinging islands during the wurzite-GaN thin film deposition, is shown to be an effective path to...
Characterizations of strain and defect free GaN nanorods on Si(111) substrates (2005)
Seo, H. W., Chen, Q. Y., Iliev, M. N., Chu, W. K., Tu, L. W., Hsiao, C. L., ...
GaN-nanorods grown on Si(111) substrates are found strain- and defect-free as characterized by micro Raman spectroscopy, secondary electron (SE) and cathode-luminescence (CL) imaging. The matrix...