Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001) (2009)
Shen, T., Gu, J. J., Xu, M., Wu, Y. Q., Bolen, M. L., Capano, M. A., ...
Epitaxial graphene films were formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. A high-k gate stack on epitaxial graphene is realized by inserting...
Magneto-conductance Oscillations in Graphene Antidot Arrays (2008)
Shen, T., Wu, Y. Q., Capano, M. A., Rokhinson, L. R., Engel, L. W., Ye, P. D.
Epitaxial graphene films have been formed on the C-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. Nano-scale square antidot arrays have been fabricated on these...
Top-gated graphene field-effect-transistors formed by decomposition of SiC (2008)
Wu, Y. Q., Ye, P. D., Capano, M. A., Xuan, Y., Sui, Y., Qi, M., ...
Top-gated, few-layer graphene field-effect transistors (FETs) fabricated on thermally-decomposed semi-insulating 4H-SiC substrates are demonstrated. Physical vapor deposited SiO2 is used as the gate...
Top-gated graphene field-effect-transistors formed by decomposition of SiC (2008)
Wu, Y. Q., Ye, P. D., Capano, M. A., Xuan, Y., Sui, Y., Qi, M., ...
Top-gated, few-layer graphene field-effect transistors (FETs) fabricated on thermally decomposed semi-insulating 4H-SiC substrates are demonstrated. Physical vapor deposited SiO2 is used as the gate...
Magnetoconductance oscillations in graphene antidot arrays (2008)
Shen, T., Wu, Y. Q., Capano, M. A., Rokhinson, L. P., Engel, L. W., Ye, P. D.
Capano, M. A., Kim, B. C., Smith, A. R., Kvam, E. P., Tsoi, S., Ramdas, A. K.
Cubic (3C) silicon carbide (SiC) epilayers grown on Si substrates by chemical vapor deposition, characterized using transmission electron microscopy (TEM), high-resolution x-ray diffraction (HRXRD),...
Inversion Channel MOSFETs in 3C-SiC on Silicon (2004)
Wan, Jianwei, Capano, M. A., Melloch, M. R.
As a substrate material, single crystal SiC wafers are commercially available in diameters up to 75 mm, whereas silicon wafers a?e available in diameters of 200-300 mm. SiC wafers remain quite...