Sadowski, J., Domagala, J. Z., Osinniy, V., Kanski, J., Adell, M., Ilver, L., ...
Thin GaMnAs layers grown by molecular beam epitaxy were subjected to low-temperature post growth annealing, with an amorphous arsenic capping layer deposited on the GaMnAs surface directly after the...
Stanciu, V., Wilhelmsson, O., Bexell, U., Adell, M., Sadowski, J., Kanski, J., ...
The influence of annealing parameters - temperature and time - on the magnetic properties of As-capped (Ga,Mn)As epitaxial thin films have been investigated. The dependence of the transition...
Solid phase epitaxy of ferromagnetic MnAs dots on GaMnAs layers (2005)
Sadowski, J., Adell, M., Kanski, J., Ilver, L., Janik, E., Lusakowska, E., ...
Formation of MnAs quantum dots in a regular ring-like distribution has been found on MBE-grown (GaMn)As surfaces after low-temperature annealing under As capping. The Mn was supplied by out-diffusing...
Stanciu, V., Wilhelmsson, O., Bexell, Ulf, Adell, M., Sadowski, J., Kanski, J., ...
The influence of annealing parameters—temperature (Ta) and time (ta)—on the magnetic properties of As-capped (Ga,Mn)As epitaxial thin films has been investigated. The dependence of the transition...
Comment on "Mn Interstitial Diffusion in (Ga,Mn)As" (2004)
Adell, M., Kanski, J., Ilver, L., Stanciu, V., Svedlindh, P.
The magnetic and transport properties of (GaMn)As are known to be influenced by postgrowth annealing, and it is generally accepted that these modifications are due to outdiffusion of Mn...
Post-growth annealing of GaMnAs under As capping - an alternative way to increase Tc (2004)
Adell, M., Stanciu, V., Kanski, J., Ilver, L., Sadowski, J., Domagala, J. Z., ...
We demonstrate that in situ post-growth annealing of GaMnAs layers under As capping is adequate for achieving high Curie temperatures (Tc) in a similar way as ex situ annealing in air or in N2...
Photoemission studies of the annealing induced modifications of (Ga,Mn)As (2004)
Adell, M., Ilver, L., Kanski, J., Sadowski, J., Mathieu, R.
Using angle resolved photoemission we have investigated annealing-induced changes in Ga(1-x)Mn(x)As with x = 0.05. We find that the position of the Fermi energy is a function of annealing time and...