M. Aoyagi

Mathematical Symbols (2008)

Miki Aoyagi, Sumio Watanabe, M. Aoyagi, S. Watanabe

x: M dimensional input y: N dimensional output w, w0: d dimensional parameter I(w) : Fisher information matrix W0: subset of parameter space n: number of any training samples. G(n) : generalization...

Development of Superconducting Tunnel Junctions with an Aluminum-Oxide Insulation Layer for X-ray Detection (2007)

H. Nakagawa, H. Akoh, M. Aoyagi, T. Taino, K. Inaba, Y. Kino

Abstract---Superconducting tunnel junctions (STJ), with a buffer layer between the silicon substrate and junction, are being developed for use as highresolution x-ray detectors. Aluminum-oxide...

Assignment of the in-plane molecular vibrations of the electron-donor molecule BDT-TTP based on polarized Raman and infrared spectra, in which BDT-TTP is 2,5-bis(1,3-dithiol-2-ylidene)-1,3,4,6-tetrathiapentalene (2002)

Ouyang, J, Yakushi, K, Kinoshita, T, Nanbu, N, Aoyagi, M, Misaki, Y, ...

Redox reactions of nitrite ions on the surface of colloidal magnetite particles coated with chondroitin sulfate (2001)

Aoyagi, M, Sato, H, Yagi, K, Fukuda, N, Nishimoto, S

Quantum chemistry literature data base - Supplement 18 - Bibliography of ab initio calculations for 1998 (1999)

Hosoya, H, Yamabe, S, Morokuma, K, Ohno, K, Aoyagi, M, Hada, M, ...

NbN-MgO-NbN junctions prepared on room-temperature quartz substrates for quasiparticle mixers (1997)

Plathner, B., Schicke, M., Lehnert, T., Gundlach, K. H., Rothermel, H., Aoyagi, M., ...

'Late onset' ornithine transcarbamylase deficiency: function of three purified recombinant mutant enzymes (1997)

Morizono, H, Listrom, CD, Rajagopal, BS, Aoyagi, M, McCann, MT, Allewell, NM, ...

Threshold Voltage Characteristics of Superconductor Gate nMOSFET at 4.2 K (1996)

Kurosawa, I., Maezawa, M., Aoyagi, M., Nakagawa, H., Yamamoto, K., Matsumoto, S.

We propose a high mobility superconductor gate nMOSFET using undoped Si as the substrate. We have studied superconducting NbN gate nMOSFETs fabricated on p-type Si, undoped Si and n-type Si...

Threshold Voltage Characteristics of Superconductor Gate nMOSFET at 4.2 K (1996)

Kurosawa, I., Maezawa, M., Aoyagi, M., Nakagawa, H., Yamamoto, K., Matsumoto, S.

We propose a high mobility superconductor gate nMOSFET using undoped Si as the substrate. We have studied superconducting NbN gate nMOSFETs fabricated on p-type Si, undoped Si and n-type Si...

Niobiumnitride tunnel junctions as frequency mixer (1993)

Plathner, B., Rothermel, H., Aoyagi, M.

Expression of glucocorticoid receptors in non‐neoplastic lymphoid follicles and B cell type malignant lymphomas

Okazaki, S‐I, Yamakawa, M, Maeda, K, Ohta, N, Aoyagi, M