M. Henini

Publication List Details

Period

1987 - 2009

Number

153

Co-Authors

Temperature dependence of the photoluminescence of self-assembled InAs/GaAs quantum dots studied in high magnetic fields. (2009)

Nuytten, Thomas, Hayne, Manus, Henini, M., Moshchalkov, V. V.

We have investigated the photoluminescence (PL) of self-assembled InAs/GaAs quantum dots (QDs) in high magnetic fields of up to 50 T and as a function of temperature. Our data clearly indicate that...

Absence of the Rashba effect in undoped asymmetric quantum wells (2008)

Eldridge, P. S., Leyland, W. J. H, Mar, J. D., Lagoudakis, P. G., Winkler, R., Karimov, O. Z., ...

To an electron moving in free space an electric field appears as a magnetic field which interacts with and can reorient the electron spin. In semiconductor quantum wells this spin-orbit interaction...

Nonradiative exciton energy transfer in hybrid organic-inorganic heterostructures (2008)

Chanyawadee, S., Lagoudakis, P.G., Harley, R.T., Lidzy, D.G., Henini, M.

Nonradiative energy transfer from a GaAs quantum well to a thin overlayer of an infrared organic semiconductor dye is unambiguously demonstrated. The dynamics of exciton transfer are studied in the...

Energy-dependent electron-electron scattering and spin dynamics in a two-dimensional electron gas (2008)

Leyland, W.J.H., Harley, R.T., Henini, M., Shields, A.J., Farrer, I., Ritchie, D.A.

The measurement of spin dynamics of electrons in a degenerate two-dimensional electron gas, wherein the Dyakonov–Perel mechanism is dominant, has been used to investigate the electron scattering...

Temperature dependence of the photoluminescence of self-assembled InAs/GaAs quantum dots in pulsed magnetic fields. (2008)

Nuytten, Thomas, Hayne, Manus, Henini, M., Moshchalkov, V. V.

We have studied the magnetic field (< 50 T) dependence of the photoluminescence (PL) of self-assembled InAs/GaAs quantum dots as a function of temperature (T). As the temperature is raised from 4.2...

Energy-Dependent Electron-Electron Scattering and Spin Dynamics in a Two Dimensional Electron Gas (2008)

Leylanda, W. J. H., Harley, R. T., Henini, M., Shields, A. J., Farrer, I., Ritchie, D. A.

Measurements of spin dynamics of electrons in a degenerate two dimensional electron gas, where the Dyakonov-Perel mechanism is dominant, have been used to investigate the electron scattering time...

All optical measurement of Rashba coefficient in quantum wells (2008)

Eldridge, P.S., Leyland, W.J.H., Lagoudakis, P.G., Karimov, O.Z., Henini, M., Taylor, D., ...

We perform an all-optical spin-dynamic measurement of the Rashba spin-orbit interaction in (110)-oriented GaAs/AlGaAs quantum wells under applied electric field. This crystallographic orientation...

Non-radiative exciton energy transfer in hybrid organic-inorganic heterostructures (2007)

Chanyawadee, S., Lagoudakis, P. G., Harley, R. T., Lidzey, D. G., Henini, M.

Non-radiative optical energy transfer from a GaAs quantum well to a thin overlayer of an infrared organic semiconductor dye is unambiguously demonstrated. The dynamics of exciton transfer are studied...

Oscillatory Dyakonov-Perel spin dynamics in two-dimensional electron gases (2007)

Leyland, W.J.H., Harley, R.T., Henini, M., Shields, A.J., Farrer, I., Ritchie, D.A.

Optical pump-probe measurements of spin dynamics at temperatures down to 1.5 K are described for a series of (001)-oriented GaAs/AlGaAs quantum well samples containing high mobility two-dimensional...

Temperature Dependence of Rashba Spin-orbit Coupling in Quantum Wells (2007)

Eldridge, P. S., Leyland, W. J. H., Lagoudakis, P. G., Karimov, O. Z., Henini, M., Taylor, D., ...

We perform an all-optical spin-dynamic measurement of the Rashba spin-orbit interaction in (110)-oriented GaAs/AlGaAs quantum wells. The crystallographic direction of quantum confinement allows us to...

Oscillatory D'yakonov-Perel' spin dynamics in two dimensional electron gases (2007)

Leyland, W. J. H., Harley, R. T., Henini, M., Taylor, D., Shields, A. J., Farrer, I., ...

Optical pump-probe measurements of spin-dynamics at temperatures down to 1.5K are described for a series of (001)-oriented GaAs/AlGaAs quantum well samples containing high mobility two-dimensional...

Influence of the single-particle Zeeman energy on the quantum Hall ferromagnet at high filling factors (2007)

Piot, B. A., Maude, D. K., Henini, M., Wasilewski, Z. R., Gupta, J. A., Friedland, K. J., ...

In a recent paper [B. A. Piot et al., Phys. Rev. B 72, 245325 (2005)], we have shown that the lifting of the electron spin degeneracy in the integer quantum Hall effect at high filling factors should...

Enhanced spin-relaxation time due to electron-electron scattering in semiconductor quantum wells (2007)

Leyland, W.J.H., John, G.H., Harley, R.T., Glazov, M.M., Ivchenko, E.L., Ritchie, D.A., ...

We present a detailed experimental and theoretical analysis of the spin dynamics of two-dimensional electron gases (2DEGs) in a series of n-doped GaAs/AlxGa1−xAs quantum wells....

Anisotropic magnetic field dependence of many-body enhanced electron tunnelling through a quantum dot (2007)

Vdovin, E. E., Khanin, Yu. N., Makarovsky, O., Patane, A., Eaves, L., Henini, M., ...

We investigate the effect of an applied magnetic field on resonant tunneling of electrons through the bound states of self-assembled InAs quantum dots (QDs) embedded within an (AlGa)As tunnel...

Spin dynamics in (110)-oriented quantum wells (2006)

Harley, R.T., Karimov, O.Z., Henini, M.

Quantum structures of III–V semiconductors grown on (1 1 0)-oriented substrates are promising for spintronic applications because they allow us to engineer and control spin dynamics of electrons....

Enhanced spin relaxation time due to electron-electron scattering in semiconductors (2006)

Leyland, W. J. H., John, G. H., Harley, R. T., Glazov, M. M., Ivchenko, E. L., Ritchie, D. A., ...

We present a detailed experimental and theoretical analysis of the spin dynamics of two-dimensional electron gases (2DEGs) in a series of n-doped GaAs/AlGaAs quantum wells. Picosecond-resolution...

Resonance-like piezoelectric electron-phonon interaction in layered structures (2006)

Glavin, B. A., Kochelap, V. A., Linnik, T. L., Kent, A. J., Stanton, N. M., Henini, M.

We show that mismatch of the piezoelectric parameters between layers of multiple-quantum well structures leads to modification of the electron-phonon interaction. In particular, short-wavelength...

Electric field inversion asymmetry: Rashba and Stark effects for holes in resonant tunneling devices (2006)

De Carvalho, H. B., Lopez-Richard, V., Camps, I., Gobato, Y. Galvao, Marques, G. E., ...

We report experimental evidence of excitonic spin-splitting, in addition to the conventional Zeeman effect, produced by a combination of the Rashba spin-orbit interaction, Stark shift and charge...

Current flow and energy dissipation in low-dimensional semiconductor superlattices (2006)

Fowler, D., Patané, A., Ignatov, A., Eaves, L., Henini, M., Mori, N., ...

By applying high magnetic and electric fields to a semiconductor superlattice (SL) we create quasi-one-dimensional or quasi-zero-dimensional electronic states. This reduced dimensionality restricts...

The quantum Hall ferromagnet at high filling factors: A magnetic field induced Stoner transition (2005)

Piot, B. A., Maude, D. K., Henini, M., Wasilewski, Z. R., Friedland, K. J., Hey, R., ...

Spin splitting in the integer quantum Hall effect is investigated for a series of Al$_{x}$Ga$_{1-x}$As/GaAs heterojunctions and quantum wells. Magnetoresistance measurements are performed at mK...

1/f noise in a dilute GaAs two-dimensional hole system in the insulating phase (2005)

Deville, G., Leturcq, R., L'Hote, D., Tourbot, R., Mellor, C. J., Henini, M.

We have measured the resistance and the 1/f resistance noise of a two-dimensional low density hole system in a high mobility GaAs quantum well at low temperature. At densities lower than the...

1/f Noise In Low Density Two-Dimensional Hole Systems In GaAs (2005)

Deville, G., Leturcq, R., L'Hote, D., Tourbot, R., Mellor, C. J., Henini, M.

Two-dimensional electron or hole systems in semiconductors offer the unique opportunity to investigate the physics of strongly interacting fermions. We have measured the 1/f resistance noise of...

Spin splitting of X-related donor impurity states in an AlAs barrier (2005)

Vdovin, E. E., Khanin, Yu. N., Eaves, L., Henini, M., Hill, G.

We use magnetotunneling spectroscopy to observe the spin splitting of the ground state of an X-valley-related Si-donor impurity in an AlAs barrier. We determine the absolute magnitude of the...

Excited two-dimensional magnetopolaron states in quantum well of resonant tunnel junction (2005)

Ivanov, D. Yu., Chukalina, M. V., Takhtamirov, E. G., Dubrovskii, Yu. V., Eaves, L., Volkov, V. A., ...

Tunnel spectroscopy is used to probe the electronic structure in GaAs quantum well of resonant tunnel junction over wide range of energies and magnetic fields normal to layers. Spin degenerated high...

Development of the tunnelling gap in disordered 2D electron system with magnetic field: observation of the soft-hard gap transition (2005)

Dubrovskii, Yu. V., Volkov, V. A., Eaves, L., Vdovin, E. E., Makarovskii, O. N., ...

Magnetic field suppression of the tunneling between disordered 2D electron systems in GaAs around zero bias voltage has been studied. Magnetic field B normal to the layers induces a dip in the...

Resistance noise scaling in a 2D system in GaAs (2004)

Leturcq, R., Deville, G., L'Hote, D., Tourbot, R., Mellor, C. J., Henini, M.

The 1/f resistance noise of a two-dimensional (2D) hole system in a high mobility GaAs quantum well has been measured on both sides of the 2D metal-insulator transition (MIT) at zero magnetic field...

Magnetophotoluminescence study of the influence of substrate orientation and growth interruption on the electronic properties of InAs/GaAs quantum dots (2004)

Godefroo, Stefanie; U0043928, Maes, J, Hayne, Manus; U0009263, Moshchalkov, VV, Henini, M, Pulizzi, F, ...

We have used photoluminescence in pulsed (less than or equal to50 T) and dc (less than or equal to12 T) magnetic fields to investigate the influence of substrate orientation and growth interruption...

Gated spin relaxation in (1 1 0)-oriented quantum wells (2004)

Henini, M., Karimov, O.Z., John, G.H., Airey, R.J.

Growth, photoluminescence characterisation and time-resolved optical measurements of electron spin dynamics in (1 1 0)-oriented GaAs/AlGaAs quantum wells are described. Conditions are given for MBE...

Gated spin relaxation in (1 1 0)-oriented quantum wells (2004)

Henini, M., Karimov, O.Z., John, G.H., Harley, R.T., Airey, R. J.

Growth, photoluminescence characterisation and time-resolved optical measurements of electron spin dynamics in (1 1 0)-oriented GaAs/AlGaAs quantum wells are described. Conditions are given for MBE...

Magneto-photoluminescence of stacked self-assembled InAs/GaAs quantum dots (2004)

Maes, J, Hayne, Manus; U0009263, Henini, M, Pulizzi, F, Patane, A, Eaves, L, ...

We studied ten-fold stacked layers of self-assembled InAs/GaAs quantum dots by photoluminescence in pulsed magnetic fields. When the interlayer distance is reduced from 9.8 to 5.5 nm, a doubling of...

Pulsed magnetic fields as a probe of self-assembled semiconductor nanostructures (2004)

Hayne, Manus; U0009263, Maes, J, Bersier, S, Henini, M, Muller-Kirsch, L, Heitz, R, ...

Pulsed magnetic fields are used to study a variety of self-assembled semiconductor nanostructures. We illustrate the power of the technique with two recent examples. In the first, we study...

Gated spin relaxation in (110)-oriented quantum wells (2004)

Henini, M., Karimov, O.Z., John, G.H., Harley, R.T., Airey, R.J.

Growth, photoluminescence characterisation and time-resolved optical measurements of electron spin dynamics in (1 1 0)-oriented GaAs/AlGaAs quantum wells are described. Conditions are given for MBE...

Anisotropic magnetoresistance in a 2DEG in a quasi-random magnetic field (2003)

Rushforth, A. W., Gallagher, B. L., Main, P. C., Neumann, A. C., Henini, M., Marrows, C. H., ...

We present magnetotransport results for a 2D electron gas (2DEG) subject to the quasi-random magnetic field produced by randomly positioned sub-micron Co dots deposited onto the surface of a...

Magnetospectroscopy of Be in GaAs (2003)

Lewis, R. A., Wang, Y., Henini, M.

Far-infrared absorption measurements have been made of the Lyman series of the acceptor Be in GaAs up to magnetic fields of 30 T, supplemented by photothermal ionization spectroscopy measurements to...

Magnetospectroscopy of Be in GaAs (2003)

Lewis, R. A., Wang, Y., Henini, M.

Far-infrared absorption measurements have been made of the Lyman series of the acceptor Be in GaAs up to magnetic fields of 30 T, supplemented by photothermal ionization spectroscopy measurements to...

High temperature gate control of quantum well spin memory (2003)

Karimov, O. Z., John, G. H., Harley, R. T., Lau, W. H., Flatte, M. E., Henini, M., ...

Time-resolved optical measurements in (110)-oriented GaAs/AlGaAs quantum wells show a ten-fold increase of the spin-relaxation rate as a function of applied electric field from 20 to 80 kV cm-1 at...

Magneto-photoluminescence studies of the influence of substrate orientation on the growth of InAs/GaAs quantum dots (2003)

Maes, J, Henini, M, Hayne, Manus; U0009263, Patane, A, Pulizzi, F, Eaves, L, ...

We have investigated the formation of InAs quantum dots grown by molecular beam epitaxy on GaAs substrates with different orientations using photoluminescence spectroscopy in pulsed magnetic fields...

Resistance Noise Scaling in a Dilute Two-Dimensional Hole System in GaAs (2003)

Leturcq, R., L'Hote, D., Tourbot, R., Mellor, C. J., Henini, M.

We have measured the resistance noise of a two-dimensional (2D)hole system in a high mobility GaAs quantum well, around the 2D metal-insulator transition (MIT) at zero magnetic field. The normalized...

Optical control of spins in semiconductors (2003)

Harley, R.T., Karimov, O., Henini, M.

Recent and ongoing optical experiments on mechanisms and methods for control and gating of spin relaxation in semiconductor quantum wells are reviewed. We discuss work on high-mobility...

High temperature gate control of quantum well spin memory (2003)

Karimov, O.Z., John, G.H., Harley, R.T., Lau, W.H., Flatte, M.E., Henini, M., ...

Time-resolved optical measurements in (110)-oriented GaAs/AlGaAs quantum wells show a tenfold increase of the spin-relaxation rate as a function of applied electric field from 20 to 80 kV cm–1 at...

Unmonotonous Variation of Oscillation Threshold with In-Plane Magnetic Field in Resonant-Tunneling Diode (2003)

Popov, V. G., Dubrovskii, Yu. V., Dubonos, S. V., Eaves, L., Henini, M.

Current oscillations in the negative differential conductance region of resonant tunneling diodes with different lateral pattern and size versus perpendicular to the tunneling current magnetic field...

Nonlinear hole transport through a submicron-size channel (2003)

Makarovsky, O., Neumann, A., Martin, A. M., Turyanska, L., Patané, A., Eaves, L., ...

We investigate hole transport through a submicron-size channel fabricated from a modulation-doped p-type GaAs/(AlGa)As single- quantum-well heterostructure. The intense electric field in the channel...

Magnetospectroscopy of Be in GaAs (2003)

Lewis, R. A., Wang, Y., Henini, M.

Far-infrared absorption measurements have been made of the Lyman series of the acceptor Be in GaAs up to magnetic fields of 30 T, supplemented by photothermal ionization spectroscopy measurements to...

Optical control of spins in semiconductors (2003)

Harley, R.T., Karimov, O.Z., Henini, M.

Recent and ongoing optical experiments on mechanisms and methods for control and gating of spin relaxation in semiconductor quantum wells are reviewed. We discuss work on high-mobility...

High temperature gate control of quantum well spin memory (2003)

Karimov, O.Z., John, G.H., Harley, R.T., Lau, W.H., Flatte, M.E., Henini, M., ...

Time-resolved optical measurements in (110)-oriented GaAs/AlGaAs quantum wells show a tenfold increase of the spin-relaxation rate as a function of applied electric field from 20 to...

Optical control of spins in semiconductors (2003)

R T Harley, O Z Karimov, M Henini

Recent and ongoing optical experiments on mechanisms and methods for control and gating of spin relaxation in semiconductor quantum wells are reviewed. We discuss work on high-mobility...

Magnetospectroscopy of Be in GaAs (2003)

Lewis, R. A., Wang, Y., Henini, M.

Far-infrared absorption measurements have been made of the Lyman series of the acceptor Be in GaAs up to magnetic fields of 30 T, supplemented by photothermal ionization spectroscopy measurements to...

Dependence of quantum-dot formation on substrate orientation studied by magnetophotoluminescence (2002)

Maes, J, Hayne, Manus; U0009263, Moshchalkov, VV, Patane, A, Henini, M, Eaves, L, ...

We have investigated the substrate orientation-dependence of InAs/GaAs quantum dot growth by photoluminescence spectroscopy in very high magnetic fields. An abrupt change from one-dimensional to...

Energy Level Diagram of X(-) in High Magnetic Fields (2002)

Vanhoucke, T., Hayne, M., Moshchalkov, V. V., Henini, M.

We have studied the photoluminescence energy of the negatively charged exciton in a 100 A GaAs/AlGaAs quantum well using magnetic fields up to 50 T. By observing recombination from all of the...

Double Injection Currents in p-i-n Diodes Incorporating Self-Assembled Quantum Dots (2002)

Belyaev, A. E., Patane, A., Eaves, L., Main, P. C., Henini, M.

We study p-i-n diodes incorporating InAs/ AlAs self-assembled quantum dots (QDs) to probe the electron and hole levels of the dots. Comparative analysis of capacitance-voltage (C-V), current-voltage...

Magnetic waveguiding in tilted magnetic fields (2002)

Nogaret, A., Lawton, D. N., Maude, D. K., Portal, J. C., Henini, M.

We apply tilted magnetic fields to ballistic electrons channelled by a microscopic magnetic gradient and show that the resonances in both the longitudinal and the Hall resistance are essentially a...

Magnetic field induced linear Coulomb gap in tunnelling between disordered two-dimensional electron systems (2002)

Dubrovskii, Y. V., Hill, R., Volkov, V. A., Main, P. C., Eaves, L., Popov, V. G., ...

We have investigated equilibrium tunnelling between disordered two-dimensional electron systems at temperatures below 0.3 K over a wide range of magnetic field. B. applied perpendicular to the...

Photoresponse spectra in p-i-n diodes containing quantum dots (2002)

Belyaev, A. E., Vitusevich, S. A., Eaves, L., Main, P. C., Henini, M., Förster, A., ...

This version is available at the following Publisher URL: http://dx.doi.org/10.1088/0957-4484/13/1/320

Magnetophotoluminescence of positively-charged excitons in GaAs quantum wells (2002)

Henini, M

We have studied the low-temperature photoluminescence of high-mobility two-dimensional hole gases in GaAs quantum wells in magnetic fields up to 50 T. We have observed both spin states of the neutral...

Measurements of the Composite Fermion masses from the spin polarization of 2-D electrons in the region $1 (2001)

Chughtai, R., Zhitomirsky, V., Nicholas, R. J., Henini, M.

Measurements of the reflectivity of a 2-D electron gas are used to deduce the polarization of the Composite Fermion hole system formed for Landau level occupancies in the regime 1

Giant magnetoresistance induced by magnetic barriers (2001)

Kubrak, V., Edmonds, K.W., Neumann, A.C., Gallagher, B.L., Main, P.C., Henini, M., ...

We present experimental results for hybrid ferromagnet/semiconductor devices in which 2D electrons propagate through sub-micron width magnet barriers. Magnetoresistances, MR, of similar to ∼1000%...

Spatial mapping of the electron eigenfunctions in InAs self-assembled quantum dots by magnetotunneling (2001)

Vdovin, E. E., Khanin, Yu. N., Veretennikov, A. V., Levin, A., Patane, A., Dubrovskii, Yu. V., ...

We use magnetotunnelling spectroscopy as a non-invasive probe to produce two-dimensional spatial images of the probability density of an electron confined in a self-assembled semiconductor quantum...

Magneto-photoluminescence of negatively charged excitons in narrow quantum wells. (2001)

Hayne, Manus, Henini, M., Moshchalkov, V. V., Vanhoucke, T.

We present the results of photoluminescence experiments on the negatively charged exciton X- in GaAs/AlxGa1-xAs quantum wells (QW) in high magnetic fields (

Probing the electronic properties of disordered two-dimensional systems by means of resonant tunnelling (2001)

Dubrovskii, Y. V., Vdovin, E. E., Patané, A., Brounkov, P. N., Larkin, I. A., Eaves, L., ...

We investigate resonant tunnelling in GaAs/(AlGa)As double- barrier resonant-tunnelling diodes in which a single layer of InAs self-assembled quantum dots is embedded in the centre of the GaAs...

Wavelength tuning in GaAs/AlGaAs quantum wells by InAs submonolayer insertion (1999)

Xu, Z. Y., Wang, Jiannong, Wang, Y., Ge, Wei-Kun, Li, Qing, Henini, M., ...

Journal of Physics: Condensed Matter © copyright (1999) IOP Publishing Ltd. The Journal's web site is located at http://www.iop.org/EJ/journal/JPhysCM

Self-sustained current oscillation above 100 GHz in a GaAs/AlAs superlattice (1999)

Schomburg, Ekkehard, Henini, M., Chamberlain, J. M., Steenson, D. P., Brandl, S., Hofbeck, K., ...

A GaAs/AlAs superlattice with a large miniband (120 meV) showed self-sustained current oscillation at a frequency of 103 GHz giving rise to microwave emission (power 0.5 mW). The emission line had a...

Hysteretic behavior and evidence for domain formation in a double-layer quantum Hall system at total filling factor 2 (1998)

Lok, J. G. S., Geim, A. K., Tieke, B., Maan, J. C., Stoddart, S. T., Hyndman, R. J., ...

We report anomalous behavior in a double-layer two dimensional hole gas (2DHG) at even integer filling factors which includes hysteresis in the longitudinal and Hall resistances and a very weak...

Tunneling spectroscopy of hole plasmons in a valence-band quantum well (1996)

Neves, B. R., Foster, T. J., Eaves, L., Main, P. C., Henini, M., Fisher, D. J., ...

We investigate the current-voltage characteristics of a p-doped resonant tunneling diode. In the voltage range slightly above the bias corresponding to resonant tunneling of holes into the first...

Tunneling spectroscopy of hole plasmons in a valence-band quantum well (1996)

Neves, B. R., Foster, T. J., Eaves, L., Main, P. C., Henini, M., Fisher, D. J., ...

We investigate the current-voltage characteristics of a p-doped resonant tunneling diode. In the voltage range slightly above the bias corresponding to resonant tunneling of holes into the first...

Energy states of Be in GaAs (1996)

Lewis, R. A., Cheng, T. S., Henini, M., Chamberlain, J. M.

Far-infrared absorption due to Lyman transitions of the Be acceptor in GaAs has been measured in bulk molecular-beam-epitaxy-grown samples at various temperatures and under different illumination...

Energy states of Be in GaAs (1996)

Lewis, R. A., Cheng, T. S., Henini, M., Chamberlain, J. M.

Far-infrared absorption due to Lyman transitions of the Be acceptor in GaAs has been measured in bulk molecular-beam-epitaxy-grown samples at various temperatures and under different illumination...

Tunneling spectroscopy of hole plasmons in a valence-band quantum well (1996)

Neves, B. R., Foster, T. J., Eaves, L., Main, P. C., Henini, M., Fisher, D. J., ...

We investigate the current-voltage characteristics of a p-doped resonant tunneling diode. In the voltage range slightly above the bias corresponding to resonant tunneling of holes into the first...

Energy states of Be in GaAs (1996)

Lewis, R. A., Cheng, T. S., Henini, M., Chamberlain, J. M.

Far-infrared absorption due to Lyman transitions of the Be acceptor in GaAs has been measured in bulk molecular-beam-epitaxy-grown samples at various temperatures and under different illumination...

Tunneling spectroscopy of hole plasmons in a valence-band quantum well (1996)

Neves, B. R., Foster, T. J., Eaves, L., Main, P. C., Henini, M., Fisher, D. J., ...

We investigate the current-voltage characteristics of a p-doped resonant tunneling diode. In the voltage range slightly above the bias corresponding to resonant tunneling of holes into the first...

Energy states of Be in GaAs (1996)

Lewis, R. A., Cheng, T. S., Henini, M., Chamberlain, J. M.

Far-infrared absorption due to Lyman transitions of the Be acceptor in GaAs has been measured in bulk molecular-beam-epitaxy-grown samples at various temperatures and under different illumination...

Phonon Absorption at the Magneto-Roton Minimum in the Fractional Quantum Hall Effect (1994)

Mellor, CJ, Eyles, RH, Digby, JE, Kent, AJ, Benedict, KA, Challis, LJ, ...

We have made the first phonon absorption measurements in the fractional quantum Hall r\'egime. Experiments have been conducted on two samples which have similar electron densities but greatly...

Role of Point-Defects in the Silicon Diffusion in Gaas and Al0.3ga0.7as and in the Related Superlattice Disordering (1992)

Pavesi, L., Ky, N. H., Ganiere, J. D., Reinhart, F. K., Babaali, N., Harrison, I., ...

The mechanism of silicon diffusion in GaAs, Al0.3Ga0.7As, and the silicon diffusion-induced layer disordering of multiquantum wells have been studied by photoluminescence, secondary-ion-mass...

HIGH RESOLUTION TEM-CL FROM THE CROSS-SECTIONAL SPECIMENS OF GaAs/AlGaAs QWs (1991)

Wang, J., Steeds, J., Henini, M.

One of the advantages of the scanning transmission electron microscope cathodoluminescence (STEM-CL) technique is its higher spatial resolution in comparison with CL performed in a scanning electron...

HIGH RESOLUTION TEM-CL FROM THE CROSS-SECTIONAL SPECIMENS OF GaAs/AlGaAs QWs (1991)

Wang, J., Steeds, J., Henini, M.

One of the advantages of the scanning transmission electron microscope cathodoluminescence (STEM-CL) technique is its higher spatial resolution in comparison with CL performed in a scanning electron...

HIGH RESOLUTION TEM-CL FROM THE CROSS-SECTIONAL SPECIMENS OF GaAs/AlGaAs QWs (1991)

Wang, J., Steeds, J., Henini, M.

One of the advantages of the scanning transmission electron microscope cathodoluminescence (STEM-CL) technique is its higher spatial resolution in comparison with CL performed in a scanning electron...

INVESTIGATIONS OF THE NEGATIVE DIFFERENTIAL CONDUCTIVITY AND CURRENT BISTABILITY IN DOUBLE BARRIER n+ GaAs/(AlGa)As/GaAs/(AlGa)As/n+ GaAs RESONANT TUNNELLING DEVICES USING HIGH MAGNETIC FIELDS (1987)

Payling, C., Alves, E., Eaves, L., Foster, T., Henini, M., Hughes, O., ...

Negative differential conductivity (NDC) and current bistability in a resonant tunnelling device are investigated by examining the oscillatory structure in the magnetotunnelling current for J ||B....

INVESTIGATIONS OF THE NEGATIVE DIFFERENTIAL CONDUCTIVITY AND CURRENT BISTABILITY IN DOUBLE BARRIER n+ GaAs/(AlGa)As/GaAs/(AlGa)As/n+ GaAs RESONANT TUNNELLING DEVICES USING HIGH MAGNETIC FIELDS (1987)

Payling, C., Alves, E., Eaves, L., Foster, T., Henini, M., Hughes, O., ...

Negative differential conductivity (NDC) and current bistability in a resonant tunnelling device are investigated by examining the oscillatory structure in the magnetotunnelling current for J ||B....

INVESTIGATIONS OF THE NEGATIVE DIFFERENTIAL CONDUCTIVITY AND CURRENT BISTABILITY IN DOUBLE BARRIER n+ GaAs/(AlGa)As/GaAs/(AlGa)As/n+ GaAs RESONANT TUNNELLING DEVICES USING HIGH MAGNETIC FIELDS (1987)

Payling, C., Alves, E., Eaves, L., Foster, T., Henini, M., Hughes, O., ...

Negative differential conductivity (NDC) and current bistability in a resonant tunnelling device are investigated by examining the oscillatory structure in the magnetotunnelling current for J ||B....