Utilization of wet chemical etching for revealing defects in GaAs x-ray detector arrays (2005)
Skriniarová , J., Perdochová, A., Hrúzik, M., Veselý, M., Bendjus, B., Haupt, L., ...
The aim of the study was to check the potential of wet chemical etching to improve the performance of GaAs-based X-ray detector arrays in view of their applications in medical diagnostics and...
Zerstörungsfreie Prüfverfahren für die Elektronik, mikrobearbeitete Strukturen und Baugruppen (2005)
Köhler, B., Schreiber, J., Bendjus, B., Herms, M., Melov, V.G., Krüger, P., ...
NDE techniques for electronics, micromachined structures, and assembling are outlined. The applied methods comprise acoustic, thermal, optical, and X-ray techniques. Additionally, scanning electron...
Herms, M., Irmer, G., Verma, P., Goerigk, G.
Laser spectroscopical methods as Raman scattering (RS) and Photoluminescence as well as Small Angle Scattering of Xrays (SAXS) are presented as powerful tools for the efficient, nondestructive and...
Köhler, B., Schreiber, J., Bendjus, B., Herms, M., Melov, V., Helfen, L., ...
NDE activities at the Laboratory for Acoustic Diagnosis and Quality Assurance (EADQ) Dresden are outlined. The applied methods comprise acoustic, thermal, optical, and X-ray ones. Additionally,...
Precipitation in low-temperature grown GaAs (2002)
Herms, M., Irmer, G., Goerigk, G., Bedel, E., Claverie, A.
The precipitation of arsenic in GaAs epitaxially grown at low temperature (LT GaAs) has been studied as a function of the post-growth annealing temperature by three independent methods: transmission...
Advanced x-ray imaging techniques for semiconductor wafer characterisation (2002)
Baumbach, T., Mikulik, P., Korytar, D., Pernot, P., Lubbert, D., Helfen, L., ...
Raman studies on gaas1-xbix and inas1-xbix (2001)
Verma, P., Oe, K., Yamada, M., Harima, H., Herms, M., Irmer, G.
Micro-raman investigation of InAsBi epilayers grown by MOVPE (2000)
Verma, P., Herms, M., Irmer, G., Okamoto, H., Oe, K., Yamada, M.
Schreiber, J., Herms, M., Fukuzawa, M., Yamada, M.
A comprehensive procedure as how to record the spatial distribution of residual strain and stress respectively, in semiconductor single crystal wafers by Scanning Infrared Polariscopy (SIRP) and High...
Herms, M., Fukuzawa, M., Melov, V.G., Schreiber, J., Yamada, M.
The fabrication of most of micro and optoelectronic devices is based on substrates cut as wafers from melt-grown single crystals. The growth of crystals, the subsequent annealing steps and the...
Herms, M., Fukuzawa, M., Melov, V.G., Schreiber, J., Möck, P., Yamada, M.
We have compared the strain data in GaAs wafers, as-grown as well as annealed, determined by means of the scanning infrared polariscope (SIRP) with data of high-resolution X-ray diffraction (HRXD)...
Breakdown of Elasticity in Copper and Aluminium Interconnects (2000)
Schreiber, J., Melov, V.G., Herms, M.
Applying a non-destructive approach to test the mechanical properties metallic interconnections highly constrained in two dimensions anomalies were found, which can be explained by the breakdown of...
Irmer, G., Monecke, J., Verma, P., Goerigk, G., Herms, M.
This version is available at the following URL: http://jap.aip.org/
Characterization of GaAs(1-x) Bi(x) Epilayers by Raman Scattering and X-ray Diffraction (1999)
Herms, M., Melov, V.G., Verma, P., Irmer, G., Okamoto, H., Fukuzawa, M., ...
For the first time, the Raman spectra of GaAs1-xBix, mixed crystal layers have been analysed at different temperatures in dependence on the molar fraction x. A two-mode behavior well-known from other...
Partial pressure of phosphorus and arsenic vapor measured by raman scattering (1999)
Roth, K., Kortus, J., Herms, M., Porezag, D., Pederson, M.
In-situ Raman scattering results on vapor of phosphorus and arsenic at temperatures up to 1400 K are presented. The ration of the Raman intensites of different species in the gas is proportional to...
Möck, P., Fukuzawa, M., Laczik, Z., Smith, G.W., Brooker, G., Yamada, M., ...
Different types of dislocation bundles are identified in GaAs Substrates of III-V heterostructures. Comparisons of X-ray transmission topograms with scanning infrared polariscopy images show a one to...
Residual Strain in Semi-Insulating InP Wafers Treated by Multiple-Step Wafer Annealing (1999)
Fukuzawa, M., Herms, M., Uchida, M., Oda, O., Yamada, M.
By using a scanning infrared polariscope (SIRP), the residual strain was characterized in semi-insulating wafers of slightly Fe-doped InP crystals treated by multiple-step wafer annealing (MWA). The...
Herms, M., Fukuzawa, M., Yamada, M., Klöber, J., Zychowitz, G., Niklas, J.
The spatial distribution of residual strain in undoped 2 inch GaAs wafers multi-step annealed in holders of different geometry was characterized by the scanning infrared polariscope (SIRP) method....