M. Ilegems

Publication List Details

Period

1969 - 2007

Number

121

Co-Authors

Characterization of Ingaas and Inalas Layers on Inp by 4-Crystal High-Resolution X-Ray-Diffraction and Wedge Transmission Electron-Microscopy (2007)

Houdre, R., Gueissaz, F., Gailhanou, M., Ganiere, J. D., Rudra, A., Ilegems, M.

The indium desorption rates from InGaAs and InAlAs grown on InP substrates have been measured by wedge transmission electron microscopy as a function of the growth temperature. Desorption becomes...

Interface Measurements of Heterojunction Band Lineups with the Vanderbilt Free-Electron Laser (2007)

Coluzza, C., Tuncel, E., Staehli, J. L., Baudat, P. A., Margaritondo, G., McKinley, J. T., ...

We used optical pumping by the Vanderbilt free-electron laser and the technique of internal photoemission to measure with high accuracy the conduction-band discontinuity of semiconductor...

Growth of Gainas(P) and Gainasp/Gainas Mqw Structures by Cbe (2007)

Rudra, A., Carlin, J. F., Ruterana, P., Gailhanou, M., Staehli, J. L., Ilegems, M.

We discuss the growth of lattice matched GaInAs, GaInAsP and GaInAsP/GaInAs multiple quantum well structures for high speed laser applications. Optical cavities, including five 90 angstrom GaInAs...

High-Reflectance Gainp/Gaas Distributed-Bragg-Reflector (2007)

Saintcricq, B., Rudra, A., Ganiere, J. D., Ilegems, M.

A high-reflectance GaInP/GaAs distributed Bragg reflector (DBR) was grown by chemical beam epitaxy (CBE). The mirror consists of 40 pairs of alternating layers and was designed for a centre...

One-Step Growth of Buried Heterostructures by Chemical Beam Epitaxy over Patterned Inp Substrates (2007)

Rudra, A., Sugiura, H., Ling, J., Bonard, J. M., Ganiere, J. D., Defays, M., ...

We studied the formation of buried heterostructures obtained in a single growth step over nonplanar substrates patterned with ridges. When the ridge dimensions are large enough, the growth on the...

Low-Frequency Noise Measurements of Alxga1-Xas/Inyga1-Y as/Gaas High-Electron-Mobility Transistors (2007)

Haddab, Y., Deveaud, B., Buhlmann, H. J., Ilegems, M.

Low-frequency noise measurements have been performed in the linear range of the I-V characteristics of pseudomorphic Al0.3Ga0.7As/In0.25Ga0.75As/GaAs high electron mobility transistors (HEMTs) grown...

Chemical Beam Epitaxy of 1.55-Mu-M Separate-Confinement Heterostructure Multiple-Quantum-Well Laser-Diodes (2007)

Carlin, J. F. R., Sallese, J. M., Defays, M. P., Grunberg, P. J., Rudra, A. P., Bonard, J. M., ...

We report on the realization of InGaAs-lnGaAsP separate confinement heterostructure multiple quantum well lasers grown by chemical beam epitaxy. We discuss key growth parameters and characterization...

Dephasing of strongly coupled exciton-photon systems (2007)

Bradley, A. L., Dunbar, L. A., Hegarty, J., Stanley, R. P., Oesterle, U., Houdré, R., ...

The coherent dynamics of cavity-polaritons are investigated using the four-wave-mixing technique. A series of experiments on four samples operating in both the weak and strong coupling regimes were...