Catalyst-free selective-area MOVPE of semiconductor nanowires on (111)B oriented substrates (2004)
Motohisa, J., Noborisaka, J., Takeda, J., Inari, M., Fukui, T., 本久, 順一
We report on a catalyst-free approach for the growth of semiconductor nanowires which is attracting interest as building blocks for nanoscale electronics and circuits. Our approach is based on...
Catalyst-free selective-area MOVPE of semiconductor nanowires on (111)B oriented substrates (2004)
Motohisa, J., Noborisaka, J., Takeda, J., Inari, M., Fukui, T.
We report on a catalyst-free approach for the growth of semiconductor nanowires which is attracting interest as building blocks for nanoscale electronics and circuits. Our approach is based on...
Catalyst-free selective-area MOVPE of semiconductor nanowires on (111)B oriented substrates (2004)
Motohisa, J., Noborisaka, J., Takeda, J., Inari, M., Fukui, T.
We report on a catalyst-free approach for the growth of semiconductor nanowires which is attracting interest as building blocks for nanoscale electronics and circuits. Our approach is based on...
Growth of GaAs/AlGaAs hexagonal pillars on GaAs (1 1 1)B surfaces by selective-area MOVPE (2004)
Motohisa, J., Takeda, J., Inari, M., Noborisaka, J., Fukui, T., 本久, 順一
We report on the growth of GaAs and GaAs/AlGaAs heterostructured hexagonal pillar structures using selective area (SA) metalorganic vapor phase epitaxy (MOVPE). By performing growth on SiO2-masked (1...
Growth of GaAs/AlGaAs hexagonal pillars on GaAs (1 1 1)B surfaces by selective-area MOVPE (2004)
Motohisa, J., Takeda, J., Inari, M., Noborisaka, J., Fukui, T.
We report on the growth of GaAs and GaAs/AlGaAs heterostructured hexagonal pillar structures using selective area (SA) metalorganic vapor phase epitaxy (MOVPE). By performing growth on SiO2-masked (1...
Growth of GaAs/AlGaAs hexagonal pillars on GaAs (1 1 1)B surfaces by selective-area MOVPE (2004)
Motohisa, J., Takeda, J., Inari, M., Noborisaka, J., Fukui, T.
We report on the growth of GaAs and GaAs/AlGaAs heterostructured hexagonal pillar structures using selective area (SA) metalorganic vapor phase epitaxy (MOVPE). By performing growth on SiO2-masked (1...