M. J. Ashwin

Shallow thermal donors in annealed CZ silicon and links to the NL10 spectrum: the relevance of H, Al and N impurities (1997)

Newman, R.C., Ashwin, M.J., Pritchard, R.E., Tucker, J.H., Lightowlers, E.C., Gregorkiewicz, T., ...

Shallow thermal donors associated with H, Al and N in annealed Czochralski silicon distinguished by infrared spectroscopy (1997)

Pritchard, R.E., Ashwin, M.J., Tucker, J.H., Newman, R.C., Lightowlers, E.C., Gregorkiewicz, T., ...

Lattice locations of silicon atoms in delta-doped layers in GaAs at high doping concentrations (1996)

Newman, R.C., Ashwin, M.J., Fahy, M.R., Hart, L., Holmes, S.N., Roberts, C., ...

Low-noise infrared (IR) absorption measurements of localized vibrational modes (LVM's) showed that SiAs acceptors, SiGA-SiAs pairs, and a deep trap Si-X (VGa-SiAs-AsGa), as well as isolated SiGa...

The transition from dilute aluminium delta-structures to an AlAs monolayer in GaAs and a comparison with Si delta-doping (1994)

Ashwin, M.J., Fahy, M.R., Hart, L., Newman, R.C., Wagner, J.

Superlattices of Al delta layers embedded in GaAs have been grown by molecular beam epitaxy at 400 degree Celsius on (001) GaAs. Infrared absorption measurements revealed a shift of the Al localized...

A local vibrational mode investigation of p-type Si-doped GaAs (1994)

Ashwin, M.J., Fahy, M.R., Newman, R.C., Wagner, J., Robbie, D.A., Silier, I., ...

Infrared absorption (IR) and Raman scattering measurements have been made of the localized vibration modes (LVM) due to defects incorporating silicon impurities in p-type Si-doped GaAs grown by...

Incorporation of silicon in -311-A and -111-A GaAs grown by molecular beam epitaxy. (1994)

Wagner, J., Ramsteiner, M., Ashwin, M.J., Fahy, M.R., Newman, R.C., Braun, W., ...

The incorporation of silicon into GaAs grown by molecular beam epitaxy on Ga-terminated (311)A and (111)A surfaces has been investigated by local vibrational mode (LVM) Raman and absorption...