A novel bipolar transistor structure, namely, SiGe base lateral PNM Schottky collector bipolar transistor (SCBT) on silicon-on-insulator (SOI) substrate is explored using two-dimensional (2D)...
Miller's approximation in VLSI and power bipolar transistors with reach-through collectors (1997)
Using a modified ionization model based on nonlocal impact ionization, Miller's relationship is examined for typical reach-through collector VLSI bipolar transistors with collector epi-thickness...
Profile design considerations for minimizing base transit time in SiGe HBT's (1997)
A unified closed form analytical model for base transit time of SiGe HBT's for uniform and exponential base dopant distributions with different Ge profiles in the base (e.g., box, trapezoidal,...