Enhancement-mode quantum transistors for single electron spin (2006)
Jones, G. M., Hu, B. H, Yang, C. H, Yang, M. J, Lyanda-Geller, Yuli
Using an InAs/GaSb composite quantum well, we demonstrate an enhancement mode single electron transistor. With a Hall bar geometry, we show that the device undergoes a transition from accumulation of...
Jones, G. M., Hu, B. H., Yang, C. H., Yang, M. J., Lyanda-Geller, Y. B.
We demonstrate experimentally single-electron quantum dots using a single-top-gate transistor configuration on a composite quantum well. The data indicate a 15 meV Coulomb charging energy and a 20...
Jones, G. M., Hu, B. H., Yang, C. H., Yang, M. J., Lyanda-Geller, Y. B.
We demonstrate experimentally single-electron quantum dots using a single-top-gate transistor configuration on a composite quantum well. The data indicate a 15 meV Coulomb charging energy and a 20...
Jones, G. M., Hu, B. H., Yang, C. H., Yang, M. J., Lyanda-Geller, Y. B.
We propose and demonstrate experimentally a novel design of single-electron quantum dots. The structure consists of a narrow band gap quantum well that can undergo a transition from the hole...
Scalable Quantum Computing with "Enhancement" Quantum Dots (2005)
Lyanda-Geller, Y. B., Yang, M. J., Yang, C. H.
We propose a novel scheme of solid state realization of a quantum computer based on single spin "enhancement mode" quantum dots as building blocks. In the enhancement quantum dots, just one electron...
On demand single photon source using a nanoscale metal-insulator-semiconductor capacitor (2005)
Hu, Binhui, Yang, C. H., Yang, M. J.
We propose an on-demand single photon source for quantum cryptography using a metal-insulator-semiconductor quantum dot capacitor structure. The main component in the semiconductor is a p-doped...
Quantum steering of electron wave function in an InAs Y-branch switch (2005)
Jones, G. M., Yang, C. H., Yang, M. J., Lyanda-Geller, Y. B.
We report experimental results on gated Y-branch switches made from InAs ballistic electron waveguides. We demonstrate that gating modifies the electron wave functions as well as their interference...
Quantum steering of electron wave function in an InAs Y-branch switch (2005)
Jones, G. M., Yang, C. H., Yang, M. J., Lyanda-Geller, Y. B.
We report experimental results on gated Y-branch switches made from InAs ballistic electron waveguides. We demonstrate that gating modifies the electron wave functions as well as their interference...
Quantum steering of electron wave function in an InAs Y-branch switch (2004)
Jones, G. M., Yang, M. J., Lyanda-Geller, Y. B., Yang, C. H.
We report experiments on gated Y-branch switches made from InAs ballistic electron wave guides. We demonstrate that gating modifies the electron wave functions as well as their interference pattern,...
Characterization of one-dimensional quantum channels in InAs/AlSb (2002)
Yang, C. H., Yang, M. J., Cheng, K. A., Culbertson, J. C.
We report the magnetoresistance characteristics of one-dimensional electrons confined in a single InAs quantum well sandwiched between AlSb barriers. As a result of a novel nanofabrication scheme...
Quantum Beating in Ring Conductance: Observation of Spin Chiral States and Berry's phase (2002)
Yang, M. J., Yang, C. H., Cheng, K. A., Lyanda-Geller, Y. B.
Using singly connected rings with a collimating contact to current leads, we have observed the spin quantum beating in the Aharonov-Bohm conductance oscillations. We demonstrate that the beating is a...
Suppression of Auger recombination in long-wavelength quantum well W-structure lasers (2000)
Findlay, P. C., Wells, J-P. R., Bradley, I. V., Crowder, J. G., Pidgeon, C. R., Murdin, B. N., ...
A Novel InAs Quantum Wire System (1998)
Yang, C. H., Yang, M. J., Cheng, K. A., Culbertson, J. C.
This article reports on a new technique in patterning high-quality, low-dimensional electrons in single InAs quantum wells. Grown by molecular beam epitaxy, the single InAs quantum well is sandwiched...
Chemical and Electronic Properties of Sulfer-Passivated InAs Surfaces (1998)
Petrovykh, D. Y., Yang, M. J., Whitman, L. J.
Treatment with ammonium sulfide [(NH4)2Sx] solutions is used to produce model passivated InAs (001) surfaces with well-defined chemical and electronic properties. The passivation effectively removes...