A novel collector-tub concept for realizing high-voltage lateral bipolar transistors on SOI (2003)
Two-dimensional numerical simulation studies of collector-emitter breakdown voltage (BV/sub CEO/) of a novel collector-tub lateral bipolar transistor (CTLBT) on silicon-on-insulator (SOI) are...
This paper shows that base doping profiles obtained using any iterative scheme for reducing the base transit time τb in bipolar transistors for a given neutral base width must take into account the...
Considering the small warping parabolic heavy hole model with the quasi-elastic approximation in acoustic phonon scattering, it is shown that the hole scattering length is independent of the hole...