High-k dielectrics for future generation memory devices (Invited Paper) (2009)
Kittl, JA, Opsomer, K, Popovici, M, Menou, N, Kaczer, B, Wang, XP, ...
Impact of fin width on digital and analog performances of n-FinFETs (2007)
Mercha, A, Parvais, B, Loo, J, Gustin, C, Dehan, M, ...
This paper examines the impact of an important geometrical parameter of FinFET devices, namely the fin width. From static and low-frequency measurements on n-FinFETs (I-V, C-V and 1/f noise),...
Sub-threshold channels at the edges of nanoscale triple-gate silicon transistors (2007)
Sellier, H., Lansbergen, G. P., Caro, J., Collaert, N., Ferain, I., Jurczak, M., ...
We investigate by low-temperature transport experiments the sub-threshold behavior of triple-gate silicon field-effect transistors. These three-dimensional nano-scale devices consist of a...
Transport spectroscopy of a single dopant in a gated silicon nanowire (2007)
Sellier, H., Lansbergen, G. P., Caro, J., Collaert, N., Ferain, I., Jurczak, M., ...
We report on spectroscopy of a single dopant atom in silicon by resonant tunneling between source and drain of a gated nanowire etched from silicon on insulator. The electronic states of this dopant...
Lousberg, Grégory, Yu, HY, Froment, B, Augendre, E, De Keersgieter, A, Lauwers, A, ...
In this letter, the Schottky-barrier height (SBH) lowering in Pt silicide/n-Si junctions and its implications to Schottky-barrier source/drain p-field-effect transistors (p-SBFETs) are studied...
Transport spectroscopy of a single dopant in a gated silicon nanowire (2006)
Sellier, H., Lansbergen, G. P., Caro, J., Collaert, N., Ferain, I., Jurczak, M., ...
We report on spectroscopy of a single dopant atom in silicon by resonant tunneling between source and drain of a gated nanowire etched from silicon on insulator. The electronic states of this dopant...
Roberts, C K, Barnard, R James, Sindhu, R K, Jurczak, M, Ehdaie, A, Vaziri, N D
Previously, we have demonstrated that chronic consumption of a high-fat, high-refined sugar (HFS) diet results in metabolic syndrome which is marked by obesity, insulin resistance, hyperlipidemia,...
Yu, HY, Pourtois, G, Anil, KG, Kubicek, S, ...
The impact of TiN film thickness variations on the effective work function (WF) of poly-SiTiN/SiO2 and poly-Si/TiN/HfSiON interfaces has been investigated. The electrical signatures of these gate...
Sub-threshold channels at the edges of nanoscale triple-gate silicon transistors (2006)
Sellier, H., Lansbergen, G. P., Caro, J., Collaert, N., Ferain, I., Jurczak, M., ...
We investigate by low-temperature transport experiments the sub-threshold behavior of triple-gate silicon field-effect transistors. These three-dimensional nano-scale devices consist of a...
Lousberg, Grégory, Yu, Hong-Yu, Froment, Benoit, Li, M-F, Augendre, E, De Keersgieter, A, ...
Solid-State Device Research Conference, 2006. ESSDERC 2006.
Collaert, N, Kilchytska, V, Jurczak, M, Flandre, D
In this work, the effective mobility in n- and p-channel FinFETS with silicon oxynitride and HfO2 gate dielectrics and TaN gate electrode is studied as a function of the inversion charge density...
45nm LSTP FET with FUSI gate on PVD-HfO2 with excellent drivability by advanced PDA treatment (2005)
Yamamoto, K, Hayashi, S, Rothschild, A, Kubicek, S, Veloso, A, ...
Reaction behavior between Ni-FUSI gate and PVD-HfO2 gate dielectrics during FUSI formation was examined. A SiN cap between FUSI and HfO2 was found to increase the yield of the transistors, however,...
Jurczak, M, Grau, L, Linten, D, Augendre, E, De Potter, M, ...
It has been known that using selective epitaxial growth (SEG) silicon, to elevate source/drain regions, is beneficial to digital CMOS by reducing the junction leakage. In addition, this architecture...