Murakoshi, H, Gatanaga, H, Koyanagi, M, Oka, S, Takiguchi, M
No abstract available.
Park , K-T., 中村, 共則, ナカムラ, トモノリ, Nakamura, Tomonori, Nakamura, T., Lee, K.W., ...
Proc. of IPACK'01
Filling of tungsten into deep trench using time-modulation CVD method (2001)
Igarashi, Y., Morooka, T., Yamada, Y., Lee, K.W., Park, K.T., Kurino, H., ...
Extnded abstracts of the 2001 International Conference on solid state devices and materials, Tokyo, 2000. pp.34-35
Park , K-T., 中村, 共則, ナカムラ, トモノリ, Nakamura, Tomonori, Nakamura, T., Lee, K.W., ...
Proc. of IPACK'01
Filling of tungsten into deep trench using time-modulation CVD method (2001)
Igarashi, Y., Morooka, T., Yamada, Y., Lee, K.W., Park, K.T., Kurino, H., ...
Extnded abstracts of the 2001 International Conference on solid state devices and materials, Tokyo, 2000. pp.34-35
Deep trench Eeching in SOI wafer for Ttree-dimensional LSI (2000)
Lee, K.W., 中村, 共則, ナカムラ, トモノリ, Nakamura, Tomonori, Nakamura, T., Yamada, Y., ...
Extended abstracts of the 2000 International Conference on Solid State Devices and Materials
Deep trench Eeching in SOI wafer for Ttree-dimensional LSI (2000)
Lee, K.W., 中村, 共則, ナカムラ, トモノリ, Nakamura, Tomonori, Nakamura, T., Yamada, Y., ...
Extended abstracts of the 2000 International Conference on Solid State Devices and Materials
Spin-polarized tunneling of La0.67Sr0.33MnO3/YBa2Cu3O7-d junctions (1999)
Sawa, A., Kashiwaya, S., Obara, H., Yamasaki, H., Koyanagi, M., Yoshida, N., ...
The transport properties between ferromagnets and high-Tc superconductors are investigated in La0.67Sr0.33MnO3/YBa2Cu3O7-d (LSMO/YBCO)junctions in the geometry of cross-strip lines. The conductance...
New three dimensional integration technology for future system-on-silicon LSIs (1998)
Koyanagi, M., Matsumoto, T., Sakuma, K., Lee, K.W., Miyakawa, N., Itani, H., ...
New three dimensional integration technology for future system-on-silicon LSIs (1998)
Koyanagi, M., Matsumoto, T., Sakuma, K., Lee, K.W., Miyakawa, N., Itani, H., ...
New three-dimensional wafer bonding technology using adhesive injection Mmthod (1997)
Matsumoto, T., Satoh, M., Kurino, H., Miyakawa, N., Itani, H., Koyanagi, M.
New three-dimensional wafer bonding technology using adhesive injection Mmthod (1997)
Matsumoto, T., Satoh, M., Kurino, H., Miyakawa, N., Itani, H., Koyanagi, M.
Three-dimensional integration technology based on wafer bonding technique using micro-bumps (1995)
Matsumoto, T., Kudoh, Y., Tahara, M., Miyakawa, N., Itani, H., ...
Three-dimensional integration technology based on wafer bonding technique using micro-bumps (1995)
Matsumoto, T., Kudoh, Y., Tahara, M., Miyakawa, N., Itani, H., ...
Ohkubo, M., Sakamoto, I., Kohjiro, S., Kiryu, S., Hayashi, N., Koyanagi, M., ...
Röntgen-Centennial : Internat.Congress on the 100th Anniversary of the Discovery of X-Rays, Würzburg, October 23-27, 1995
Balestra, F., Tsuno, M., Matsumoto, T., Nakabayashi, H., Koyanagi, M.
The variations of the substrate current and the impact ionization rate in MOS transistors are investigated as a function of channel length and temperature. It is shown that, although a significant...
Performances and physical mechanisms in sub-0.1 µm gate length LDD MOSFETs at low temperature (1994)
Balestra, F., Nakabayashi, H., Tsuno, M., Matsumoto, T., Koyanagi, M.
The electrical properties of sub-0.1 µm gate length LDD devices are investigated between room and liquid helium temperatures. The strong impact of gate overlapping effects on LDD resistance is shown...
Balestra, F., Tsuno, M., Matsumoto, T., Nakabayashi, H., Koyanagi, M.
The variations of the substrate current and the impact ionization rate in MOS transistors are investigated as a function of channel length and temperature. It is shown that, although a significant...
Performances and physical mechanisms in sub-0.1 µm gate length LDD MOSFETs at low temperature (1994)
Balestra, F., Nakabayashi, H., Tsuno, M., Matsumoto, T., Koyanagi, M.
The electrical properties of sub-0.1 µm gate length LDD devices are investigated between room and liquid helium temperatures. The strong impact of gate overlapping effects on LDD resistance is shown...
Balestra, F., Tsuno, M., Matsumoto, T., Nakabayashi, H., Koyanagi, M.
The variations of the substrate current and the impact ionization rate in MOS transistors are investigated as a function of channel length and temperature. It is shown that, although a significant...
Performances and physical mechanisms in sub-0.1 µm gate length LDD MOSFETs at low temperature (1994)
Balestra, F., Nakabayashi, H., Tsuno, M., Matsumoto, T., Koyanagi, M.
The electrical properties of sub-0.1 µm gate length LDD devices are investigated between room and liquid helium temperatures. The strong impact of gate overlapping effects on LDD resistance is shown...
Fas and its ligand in a general mechanism of T-cell-mediated cytotoxicity.
Hanabuchi, S, Koyanagi, M, Kawasaki, A, Shinohara, N, Matsuzawa, A, Nishimura, Y, ...
To investigate the mechanisms of T-cell-mediated cytotoxicity, we estimated the involvement of apoptosis-inducing Fas molecule on the target cells and its ligand on the effector cells. When...
Fas and its ligand in a general mechanism of T-cell-mediated cytotoxicity.
Hanabuchi, S, Koyanagi, M, Kawasaki, A, Shinohara, N, Matsuzawa, A, Nishimura, Y, ...
To investigate the mechanisms of T-cell-mediated cytotoxicity, we estimated the involvement of apoptosis-inducing Fas molecule on the target cells and its ligand on the effector cells. When...