The integral field spectroscopy (IFS) wiki (2009)
Westmoquette, M. S., Exter, K. M., Christensen, L., Maier, M., Lemoine-Busserolle, M., Turner, J., ...
In this article we present the integral field spectroscopy (IFS) wiki site, http://ifs.wikidot.com; what the wiki is, our motivation for creating it, and a short introduction to IFS. The IFS wiki is...
Reduced nonthermal rollover of wide-well GaInN light-emitting diodes (2009)
Maier, M., Köhler, K., Kunzer, M., Pletschen, W., Wagner, J.
Nonthermal rollover (or efficiency droop) of the electroluminescence (EL) efficiency has been investigated for near-UV-emitting (AlGaIn)N single-well light-emitting diodes (LED) with varying GaInN...
Determination of surface potential of GaN:Si (2009)
Köhler, K., Maier, M., Kirste, L., Wiegert, J., Menner, H.
The surface potential of GaN:Si is determined for Si doping from 2.4 x 10(exp 17) cm-3 to 2.3 x 10(exp 19) cm-3 in layers grown by low pressure metal-organic vapor-phase epitaxy. We used the sheet...
Contaminant transport to public water supply wells via flood water retention areas (2009)
D. Kühlers, E. Bethge, G. Hillebrand, H. Hollert, M. Fleig, B. Lehmann, ...
The essential processes and mechanisms of the transport of contaminants from a river to a well field via a flood water retention area are presented. The transport is conceptualized as a succession of...
D. Kühlers, E. Bethge, G. Hillebrand, H. Hollert, M. Fleig, B. Lehmann, ...
No abstract available.
Maier, M., Passow, T., Kunzer, M., Schirmacher, W., Pletschen, W., Kirste, L., ...
Near-UV LEDs emitting at around 400 nm can be used e.g. as pump light source in tri-phosphor RGB white luminescence-conversion LEDs with high color rendering. Although non-thermal roll-over decreases...
Maier, M., Passow, T., Kunzer, M., Pletschen, W., Liu, S., Wiegert, J., ...
Three series of 400 nm light-emitting diodes (LED) with GaInN well widths ranging from 3 nm to 18 nm were grown on freestanding GaN- substrates, on ultra low dislocation GaN templates on sapphire,...
Demond, Avery, Adriaens, P., Towey, T., Hong, B., Chen, Q., ...
The University of Michigan dioxin exposure study was undertaken to address concerns that the industrial discharge of dioxin-like compounds in the Midland, MI area had resulted in contamination of...
Kunzer, M., Maier, M., Köhler, K., Kaufmann, U., Wagner, J.
Temperature and excitation power dependent photoluminescence spectroscopy on GaInN UV-violet LED structures allows to separate the influence of the quantum confined stark effect (QCSE) from carrier...
Enhancement of (AlGaIn)N near-UV LED efficiency using freestanding GaN substrate (2008)
Maier, M., Köhler, K., Kunzer, M., Wiegert, J., Liu, S., Kaufmann, U., ...
The effect of freestanding GaN-substrates with low defect density (DD) on the electroluminescence (EL) characteristics of near UV-LEDs has been investigated. Three series of LED-structures with...
SIMS depth profiling of Mg back-diffusion in (AlGaIn)N light-emitting diodes (2008)
Kirste, L., Köhler, K., Maier, M., Kunzer, M., Maier, M., Wagner, J.
The Mg doping profiles in close proximity to the (AlGaIn)N/GaN QW active region of group III-nitride light-emitting diodes grown by low pressure metal-organic vapor-phase epitaxy on sapphire...
(AlGaIn)N UV LEDs for integrated metal-oxide based ozone sensors (2008)
Wagner, J., Wang, C.Y., Maier, M., Kunzer, M., Passow, T., ...
There is high demand for compact low-cost ozone (O3) sensors. It has been shown that indium oxide (In2O3) thin films grown by metal-organic vapor-phase epitaxy (MOVPE) act as an O3 sensitive...
Manz, C., Yang, Q.K., Köhler, K., Maier, M., Kirste, L., Wagner, J., ...
Short wavelength (lambda < 5 mu m) quantum cascade lasers are of current interest as they operate in the technologically important atmospheric 3-5 mu m transparency window. For this wavelength range...
Photoluminescence study of In-situ rare earth doped PVT-grown SiC single crystals (2005)
Schmitt, H., Müller, R., Maier, M., Winnacker, A., Wellmann, P.
Several SiC bulk crystals were grown with erbium and ytterbium as doping materials. Erbium contents determined by secondary ion mass spectroscopy (SIMS) ranged from 1.2 (.) 10(14) cm(-3) to 1.04 (.)...
Wagner, J., Serries, D., Köhler, K., Ganser, P., Maier, M., Kirste, L., ...
We report on the growth and characterization of high In-content quaternary Ga(1-x)In(x)As(1-y)N(y) (0.78 lt = x lt = 1,y lt = 0.02), grown by plasma assisted molecular beam epitaxy on InP-substrates....
In situ Er-doping of SiC bulk single crystals (2004)
Müller, R., Desperrier, P., Seitz, C., Weisser, M., Magerl, A., Maier, M., ...
In this work the first PVT grown in-situ erbium doped SiC bulk crystal, to our knowledge, is presented. The crystal was characterised by secondary ion mass spectrometry (SIMS) and photoluminescence...
Quantitative assessment of Al-to-N bonding in dilute Al(0.33)Ga(0.67)As(1-y)N(y) (2003)
Wagner, J., Geppert, T., Köhler, K., Ganser, P., Maier, M.
A quantitative assessment of the group III-nitrogen bonding in low N-content Al(0.33)Ga(0.67)As(1-y)N(y)with y
SIMS depth profiling of InGaAsN/InAlAs quantum wells on InP (2003)
Maier, M., Serries, D., Geppert, T., Köhler, K., Güllich, H., Herres, N.
Quaternary InxGa1-xAsyN1-y (x > 0.53, 1 - y
Bonding of nitrogen in dilute GaInAsN and AlGaAsN studied by Raman spectroscopy (2003)
Wagner, J., Geppert, T., Köhler, K., Ganser, P., Maier, M.
To gain information on the local bonding of the nitrogen, Ga1-xInxAs1-yNy with x
Preferential formation of Al-N bonds in low N-content AlGaAsN (2002)
Geppert, T., Wagner, J., Köhler, K., Ganser, P., Maier, M.
The bonding of nitrogen in low N-content Al(x)Ga(1-x)As(1-y)N(y) with x
Differential function of nitric oxide in murine antigen-induced arthritis (2002)
Veihelmann, A., Hofbauer, A., Krombach, F., Dorger, M., Maier, M., ...
Background. The aim of our study was to investigate the role of inducible nitric oxide synthase (iNOS)‐derived nitric oxide (NO) production in different stages of murine...
Development of a gas-catcher system to stop relativistic ions at GSI (2001)
Scheidenberger, C, Dendooven, P, Van Duppen, Pieter; U0010286, Elisseev, S, Faestermann, T, ...
Foong, J., Symms, M.R., Barker, G.J., Maier, M., Woermann, F.G., Miller, D.H., ...
Post-mortem and structural brain imaging studies in schizophrenia have reported macroscopic changes such as global and regional cortical volume reductions, but it has been more difficult to...
Measurement of the Resonant $d\mu t$ Molecular Formation Rate in Solid HD (2001)
Porcelli, T. A., Adamczak, A., Bailey, J. M., Beer, G. A., Douglas, J. L., Faifman, M. P., ...
Measurements of muon-catalyzed dt fusion ($d\mu t \to ^4He+n+\mu^-$) in solid HD have been performed. The theory describing the energy dependent resonant molecular formation rate for the reaction...
Sigmundsson, T., Suckling, J., Maier, M., Williams, S.C.R., Bullmore, E.T., Greenwood, K.E., ...
Objective: Imaging studies of schizophrenia have repeatedly demonstrated global abnormalities of cerebral and ventricular volumes. However, pathological changes at more local levels of brain...
Dielectric function spectra of GaN, AlGaN, and GaN/AlGaN heterostructures (2001)
Wagner, J., Obloh, H., Kunzer, M., Maier, M., Köhler, K.
The pseudodielectric function spectra (epsilon) of wurtzite GaN, AlGaN, and GaN/AlGaN heterostructures were determined for photon energies ranging from 2 to 5 eV, using variable angle spectroscopic...
Partial core hole screening in the Cu L3 edge (2001)
Luitz, J., Maier, M., Hébert, C., Schattschneider, P., Blaha, P., Schwarz, K., ...
The fine structure of the copper L3 edge in fcc Cu was simulated using a full potential linearised augmented plane wave method (WIEN97). The computations were based on a single cell-model by...
Foong, J., Symms, M. R., Barker, G. J., Maier, M., Woermann, F. G., Miller, D. H., ...
Post-mortem and structural brain imaging studies in schizophrenia have reported macroscopic changes such as global and regional cortical volume reductions, but it has been more difficult to...
Hole conductivity and compensation in epitaxial GaN:Mg layers (2000)
Kaufmann, U., Schlotter, P., Obloh, H., Köhler, K., Maier, M.
The concentration p and the mobility mu of holes in metal-organic chemical vapor deposition (MOCVD) GaN:Mg layers were studied by room temperature Hall-effect measurements as a function of the Mg...
Yoshikawa, M., Wagner, J., Obloh, H., Kunzer, M., Maier, M.
Resonant Raman scattering from Al(x)Ga(1-x)N(x
Wagner, J., Ramakrishnan, A., Behr, D., Maier, M., Herres, N., Kunzer, M., ...
We report on the composition dependence of the band gap energy of strained hexagonal In(x),Ga(1-x)N layers on GaN with x
Gaymann, A., Maier, M., Köhler, K., Bronner, W., Grotjahn, F., Hornung, J., ...
Detailed studies of segregation and diffusion of the dopants Si and Be in MBE grown AlGaAs/GaAs heterostructures for optoelectronic devices are presented. Segregation of Si could be suppressed by...
MBE growth of metamorphic In(Ga)AlAs buffers (1998)
Sexl, M., Böhm, G., Maier, M., Tränkle, G., Weimann, G., Abstreiter, G.
Metamorphic buffer layers were grown by MBE on GaAs-substrates using linearly graded InAlAs and InGaAlAs buffers to accommodate lattice misfit. The surface morphology was investigated by AFM, the...
Kunzer, M., Kaufmann, U., Maier, M., Obloh, H.
Recombination paths in GaN/Al(x)Ga(1-x)N (x
Kiefer, R., Lösch, R., Walcher, H., Walther, M., Weisser, S., Czotscher, K., ...
We describe the realization of 1.55 mu m InGaAs/InAlGaAs MQW ridge waveguide laser diodes with InP cladding layers grown by molecular beam epitaxy with solid sources (SSMBE) and valved cracker cells...
Electrical and optical properties of oxygen doped GaN grown by MOCVD using N2O (1997)
Niebuhr, R., Bachem, K.H., Kaufmann, U., Maier, M., Merz, C., Santic, B., ...
Oxygen doped GaN has been grown by metalorganic chemical vapor deposition using N2O as oxygen dopant source. The layers were deposited on 2" sapphire substrates from trimethylgallium and especially...
Doping of SiC by implantation of Boron and Aluminum (1997)
Troffer, T., Schadt, M., Frank, T., Itoh, H., Pensl, G., Heindl, J., ...
Experimental studies on aluminum (Al) and boron (B) implantation in 4H/6H SiC are reported; the implantation is conducted at room temperature or elevated temperatures (500 to 700 degrees C). Both Al...
Gaymann, A., Maier, M., Bronner, W., Grün, N., Köhler, K.
Dopant diffusion is investigated by depth profiling with secondary ion mass spectrometry (SIMS) in heterostructures containing Be-doped short-period superlattice Al(x)Ga(1-x)As layers (0.3 =< x =<...
Tailoring of Si doping layers in GaAs during molecular beam epitaxy (1996)
Däweritz, L., Kostial, H., Ramsteiner, M., Klann, R., Schützendübe, P., Stahrenberg, K., ...
For Si delta -like doping of GaAs lateral ordering processes and segregation in growth direction have been investigated in real time by monitoring long-range and short-range ordering effects using...
A Raman spectroscopic study of the Si, Be, and C incorporation in InxGa1-xAs relaxed layers (1995)
Calle, F., Sacedon, A., Calleja, E., Munoz, E., Wagner, J., ...
The incorporation of high concentrations (>1019 cm-3) of Si, Be, and C in InxGa1-xAs relaxed layers has been studied as a function of In content (x
Bürkner, S., Maier, M., Larkins, E.C., Rothemund, W., O'Reilly, E.P., Ralston, J.D.
The dependence of the impurity-free interdiffusion process on the properties of the dielectric cap layer has been studied, for both unstrained GaAs/Alx Ga1-y As and pseudomorphic Iny Ga1-y As/GaAs...
Weisser, S., Larkins, E.C., Esquivias, I., Fleissner, J., Maier, M., Ralston, J.D., ...
We present the first semiconductor lasers to achieve direct CW modulation bandwidths exceeding 40GHz. The devices utilize undoped In0.35Ga0.65As/GaAs active regions and achieve largesignal modulation...
Niebuhr, R., Bachem, K., Dombrowski, K., Maier, M., Pletschen, W., Kaufmann, U.
We have studied the growth of gallium nitride on c-plane sapphire substrates. The layers were grown in a horizontal metalorganic chemical vapor deposition reactor at atmospheric pressure using...
Atomic-scale controlled incorporation of ultrahigh-density Si doping sheets in GaAs (1995)
Däweritz, L., Hey, R., Ramsteiner, M., Wagner, J., Maier, M., Kostial, H., ...
Delta-doped GaAs: Si with doping densities up to 4 X 10(14) square centimetre has been grown by molecular beam epitaxy (MBE) at a substrate temperature of 590 degree. To promote an ordered...
JANUS II - Advances in Spontaneous Speech Translation (1995)
M. Woszczyna, M. Finke, T. Kemp, M. Maier, A. Lavie, L. Mayfield, ...
JANUS II is a research system to design and test components of speech to speech translation systems as well as a research prototype for such a system. We will focus on two aspects of the system: 1)...
Tropheryma whippelii endocarditis confirmed by polymerase chain reaction (1995)
WENDLER, D., MENDOZA, E., SCHLEIFFER, T., ZANDER, M., MAIER, M.
This report concerns a patient with cardiac manifestation of Whipple's disease. For the first time, the gene that encodes the 16s rRNA of Tropheryma whippelii was identified in a native aortic valve...
Schmitz, J., Wagner, J., Maier, M., Obloh, H., Koidl, P., Ralston, J.D.
We investigate unintentional arsenic incorporation during the molecular-beam epitaxial growth of AlSb/InAs/GaSb heterostructures, using both a standard As sub4 evaporation cell and a valved arsenic...
Schmitz, J., Wagner, J., Maier, M., Obloh, H., Hiesinger, P., Koidl, P., ...
We examine in detail the improvement in the structural and transport properties of MBE-grown InAs/AlSb quantum wells by utilising a valved cracker cell to inhibit unintentional As incorporation in...
Ralston, J.D., Weisser, S., Esquivias, I., Schönfelder, A., Larkins, E.C., Rosenzweig, J., ...
We investigate p-dopant incorporation and the influence of p-doping on the gain and damping behaviour in GaAs-based strained multiple quantum well lasers. By adding 5x10high18-2x10high19 cmhigh-3...
Nucleation, relaxation and redistribution of Si layers in GaAs. (1993)
Brandt, O., Crook, G., Ploog, K., Bierwolf, R., Hohenstein, M., Maier, M., ...
We study the structural properties of Si layers of different thickness (0.1-1.3 nm) inserted in GaAs by solidsource molecular beam epitaxy. Using high- resolution electron microscopy, we demonstrate...
Ralston, J.D., Dischler, B., Hiesinger, P., Koidl, P., Maier, M., Ramsteiner, M., ...
Using SIMS profiling temperature-dependent Hall measurements, electronic Raman scattering, and infra-red absorption, a detailed study is presented examining the effects of Si dopant behaviour on...
Zeitschrift fuer Wasser- und Abwasserforschung, 22(1989) S.262-67
Resonance Raman scattering of Si local vibrational modes in GaAs (1988)
Maier, M., Ramsteiner, M., Ennen, H., Wagner, J.
We have studied the resonance of Raman scattering by Si local vibrational modes (LVM's) in heavily doped GaAs prepared by ion implantation and rapid thermal annealing. For photon energies (1.9-2.7...
KfK-4457 (Dezember 88)
Submikron hoch dotierte LPVPE-Silizium-Epitaxieschichten. (1986)
Vescan, L., Maier, M., Beneking, H., Meyer, O.
Fruehjahrstagung DPG, Duenne Schichten, Dynamik und Statistishe Physik, Halbleiterphysik, Magnetismus, Metallphysik, Oberflaechenphysik, Tiefe Temperaturen, Vakuumtechnik, Freudenstadt, 7.-11.April...
Characterization of Ga-doped solid phase-MBE silicon. (1986)
Vescan, L., Kasper, E., Meyer, O., Maier, M.
Journal of Crystal Growth, 73(1985) S.482-86
Solid phase epitaxy of Ga and P implanted silicon by rapid thermal annealing. (1985)
Vescan, L., Splettstoesser, J., Maier, M., Meyer, O., Beneking, H.
5th General Conf.of the Condensed Matter Division of the European Physical Society, Berlin, March 18-22, 1985
Hennes, E.Ch., Palmer, W., Maier, M., Eberle, S.H.
Jahrestagung der Fachgruppe Wasserchemie, GDCH,
Hennes, E.Ch., Maier, M., Eberle, S.H.
RIZA - Internat.Symp.on Recent Investigations in the Zone of Aeration, TU Muenchen, 2.-4.Oktober 1984
Diplomarbeit, Universitaet Karlsruhe 1983