Field Effect Transistors for Terahertz Detection: Physics and First Imaging Applications (2009)
Knap, W., Dyakonov, M., Coquillat, D., Teppe, F., Dyakonova, N., Łusakowski, J., ...
Resonant frequencies of the two-dimensional plasma in FETs increase with the reduction of the channel dimensions and can reach the THz range for sub-micron gate lengths. Nonlinear properties of the...
Terahertz Radiation Detection by Field Effect Transistor in Magnetic Field (2009)
Boubanga-Tombet, S., Sakowicz, M., Coquillat, D., Teppe, F., Knap, W., Dyakonov, M. I., ...
We report on terahertz radiation detection with InGaAs/InAlAs Field Effect Transistors in quantizing magnetic field. The photovoltaic detection signal is investigated at 4.2 K as a function of the...
Sakowicz, M., Lusakowski, J., Karpierz, K., Grynberg, M., Knap, W., Köhler, K., ...
Detection of terahertz radiation by two dimensional electron plasma in high electron mobility GaAs/GaAlAs transistors was investigated at cryogenic temperatures in quantizing magnetic fields....
Terahertz detection by the entire channel of high electron mobility transistors (2008)
Sakowicz, M., Lusakowski, J., Karpierz, K., Knap, W., Grynberg, M., Köhler, K., ...
GaAs/ALGaAs and GaN/AlGaN high electron mobility transistors were used as detectors of THz electromagnetic radiation at liquid helium temperatures. Application of high magnetic fields led to the...
Sakowicz, M., Lusakowski, J., Karpierz, K., Grynberg, M., Knap, W., Köhler, K., ...
Detection of THz radiation by a high electron mobility (HEMT) GaAs/GaAlAs transistor was investigated at 4 K as a function of the magnetic field B. The detection signal (a source - drain photovoltage...
In-plane optical anisotropy due to conduction band electron wavefunctions (2007)
Łusakowski, J., Sakowicz, M., Friedland, K. J., Hey, R., Ploog, K.
Photoluminescence measurements were carried out on Be $\delta$-doped GaAs/Al$_{0.33}$Ga$_{0.67}$As heterostructure at 1.6 K in magnetic fields ($B$) up to 5 T. Luminescence originating from...