M. V. Petrychuk

Origin of noise in AlGaN/GaN heterostructures in the range of 10-100 MHz (2006)

Vitusevich, S. A., Danylyuk, S. V., Kurakin, A. M., Klein, N., Offenhäusser, A., Petrychuk, M. V., ...

This version is available at the following Publisher URL: http://jap.aip.org

Dynamic redistribution of the electric field of the channel in AlGaN/GaN high electron mobility transistor with nanometer-scale gate length (2005)

Vitusevich, S. A., Danylyuk, S. V., Kurakin, A. M., Klein, N., Lüth, H., Petrychuk, M. V., ...

This version is available at the following Publisher URL: http://apl.aip.org

Power and temperature dependence of low frequency noise in AlGaN/GaN transmission line model structures (2004)

Vitusevich, S. A., Danylyuk, S. V., Klein, N., Petrychuk, M. V., Belyaev, A. E.

This version is available at the following Publisher URL: http://jap.aip.org

Separation of hot-electron and self-heating effects in two-dimensional AlGaN/GaN-based conductivity channels (2003)

Vitusevich, S. A., Danylyuk, S. V., Klein, N., Petrychuk, M. V., Avksentiev, A. Yu., Sokolov, V. N., ...

This version is available at the following Publisher URL: http://apl.aip.org