M. Zaknoune

Influence of recess extension on double heterostructure metamorphic HEMT for power application at 60 GHz (2002)

Ardouin, M., Bonte, B., Zaknoune, M., Théron, D., Cordier, Y., Bollaert, S., ...

This paper presents the influence of the recess extension on the power performance of double heterostructure Al0.65In0.35As/In0.35Ga0.65As/GaAs metamorphic HEMT’s in the millimeter wave range....

Electron lifetime of heavily Be-doped In0.53Ga0.47As as a function of growth temperature and doping density (2002)

Vignaud, D., Lampin, J.F., Lefebvre, E., Zaknoune, M., Mollot, F.

Hemt structures and technology on GAAS and inp for power amplification in millimetre wave range (2001)

Théron, D., Cordier, Y., Wallart, X., Bollaert, S., Zaknoune, M., Boudrissa, M., ...

The paper introduces a simple and efficient approach for the modelling of low-frequency dispersive phenomena in FETs. It is based on the definition of a virtual, non-dispersive associated device...

Electroluminescence of metamorphic In x Al 1-x As / In x Ga 1-x As HEMTs ON GaAs substrate (2000)

Cavassilas, N., Aniel, F., Nojeh, A., Adde, R., Zaknoune, M., Bollaert, S., ...

We present the first impact ionization investigation by electroluminescence of InxAl1-xAs /InxGa1-xAs metamorphic High Electron Mobility transistors on GaAs. Two Indium content are investigated....

Power performance capability of metamorphic HEMT on GaAs substrate (1998)

Zaknoune, M., Cordier, Y., Bollaert, S., Theron, D., Crosnier, Y.

An In0.3Al0.7As/In0.3Ga0.7As metamorphic power High Electron Mobility Transistor (HEMT) grown on GaAs has been developed. This structure with 30% indium content presents several advantages over...

0.1um metamorphic In0.4Al0.6As/In0.4Ga0.6As HEMTs on GaAs substrate (1998)

Bollaert, S., Cordier, Y., Happy, H., Zaknoune, M., Lepilliet, S., Cappy, A.

We report on the fabrication and characterization of 0.1 urn T-gate metamorphic InAlAs/InGaAs HEMTs on GaAs substrate with InAs mole fraction of 0.4. These devices present a good Schottky diode...