Jeong, Changwook, Kim, Raseong, Luisier, Mathieu, Datta, Supriyo, Lundstrom, Mark
The Landauer approach to diffusive transport is mathematically related to the solution of the Boltzmann transport equation, and expressions for the thermoelectric parameters in both formalisms are...
Nanoelectronics: Metrology and Computation (2008)
Mark Lundstrom, Jason V. Clark, Gerhard Klimeck, Arvind Raman
Abstract. Research in nanoelectronics poses new challenges for metrology, but advances in theory, simulation and computing and networking technology provide new opportunities to couple simulation and...
Low, Tony, Hong, Seokmin, Appenzeller, Joerg, Datta, Supriyo, Lundstrom, Mark
The Keldysh non-equilibrium Green function (NEGF) method is shown to provide a quantitative description of the conductance of graphene pn junctions - an important building block for graphene...
Notes on Fermi-Dirac Integrals (2008)
Fermi-Dirac integrals appear frequently in semiconductor problems, so a basic understanding of their properties is essential. The purpose of these notes is to collect in one place, some basic...
A Tight-Binding Study of the Ballistic Injection Velocity for Ultrathin-Body SOI MOSFETs (2008)
Liu, Yang, Neophytou, Neophytos, Low, Tony, Klimeck, Gerhard, Lundstrom, Mark
This paper examines the validity of the widely used parabolic effective mass approximation by computing the ballistic injection velocity of a double-gate, ultrathin-body (UTB) n-MOSFET. The energy...
HUB is Where the Heart is (2008)
Lundstrom, Mark, Klimeck, Gerhard, McLennan, Michael
The Network for Computational Nanotechnology (NCN) is a six-university initiative that was established in 2002 to connect those who develop simulation tools with those who use them. The NCN currently...
HUB is Where the Heart Is (2008)
Lundstrom, Mark, Klimeck, Gerhard, Adams III, George B., McLennan, Michael
THE NETWORK FOR COMPUTATIONAL NANOTECHNOLOGY (NCN) is a six-university initiative that was established in 2002 to connect those who develop simulation tools with those who use them. The NCN currently...
Bandstructure Effects in Silicon Nanowire Electron Transport (2007)
Neophytou, Neophytos, Paul, Abhijeet, Lundstrom, Mark, Klimeck, Gerhard
Bandstructure effects in the electronic transport of strongly quantized silicon nanowire field-effect-transistors (FET) in various transport orientations are examined. A 10-band sp3d5s*...
Farzin Assad, Zhibin Ren, Dragica Vasileska, Supriyo Datta, Mark Lundstrom, F. Assad, ...
Performance limits of silicon MOSFETs are examined by a simple analytical theory augmented by self-consistent Schrödinger-Poisson simulations. The on-current, transconductance, and drain-to-source...
Extraordinarily High Drive Currents in Asymmetrical Double-Gate (2007)
Jerry G. Fossum, Zhibin Ren, Keunwoo Kim, Mark Lundstrom
Numerical simulation results derived from a Schrödinger-Poisson tool applied to double-gate (DG) MOSFETs, supplemented by analytical characterizations of the pertinent physics, are presented to give...
Performance Analysis of a Ge/Si Core/Shell Nanowire Field-Effect Transistor (2007)
Liang, Gengchiau, Xiang, Jie, Kharche, Neerav, Klimeck, Gerhard, Lieber, Charles M., Lundstrom, Mark
We ana/lyze the performance of a recently reported Ge/Si core/shell nanowire transistor using a semiclassical, ballistic transport model and an sp3d5s* tight-binding treatment of the electronic...
Nanoelectronics: Metrology and Computation (2007)
Lundstrom, Mark, Clark, Jason V., Klimeck, Gerhard, Raman, Arvind
Research in nanoelectronics poses new challenges for metrology, but advances in theory, simulation and computing and networking technology provide new opportunities to couple simulation and...
Performance Analysis of a Ge/Si Core/Shell Nanowire Field Effect Transistor (2006)
Liang, Gengchiau, Xiang, Jie, Kharche, Neerav, Klimeck, Gerhard, Lieber, Charles M., Lundstrom, Mark
We analyze the performance of a recently reported Ge/Si core/shell nanowire transistor using a semiclassical, ballistic transport model and an sp3s*d5 tight-binding treatment of the electronic...
The role of self-heating and hot-phonons in metallic single walled carbon nanotubes (2006)
Hasan, Sayed, Alam, Ashraf, Lundstrom, Mark
The role of self-heating and hot-phonons on electronic transport in metallic single walled carbon nanotube is examined by solving a coupled electron-optical phonon (OP) Boltzmann transport equation...
Wang, Jim, Rahman, Anisur, Ghosh, Avik, Klimeck, Gerhard, Lundstrom, Mark
This paper examines the validity of the widely used parabolic effective-mass approximation for computing the current-voltage ( - ) characteristics of silicon nanowire transistors (SNWTs). The energy...
Rahman, Anisur, Klimeck, Gerhard, Lundstrom, Mark, Boykin, Timothy, Vagidov, Nizami
Band-structure effects on channel carrier density in the ultrathin-body end of the ITRS roadmap silicon (100) n-type metal oxide semiconductor field effect transistors (MOSFETs) are assessed here...
Wang, Jing, Rahman, Anisur, Ghosh, Avik, Klimeck, Gerhard, Lundstrom, Mark
In this letter, we explore the band structure effects on the performance of ballistic silicon nanowire transistors sSNWTsd. The energy dispersion relations for silicon nanowires are evaluated with an...
A Theoretical Investigation of Surface Roughness Scattering in Silicon Nanowire Transistors (2005)
Wang, Jing, Polizzi, Eric, Ghosh, Avik, Datta, Supriyo, Lundstrom, Mark
In this letter, we report a three-dimensional (3D) quantum mechanical simulation to investigate the effects of surface roughness scattering (SRS) on the device characteristics of Si nanowire...
Wang, Jing, Rahman, Anisur, Ghosh, Avik, Klimeck, Gerhard, Lundstrom, Mark
This paper examines the validity of the widely-used parabolic effective-mass approximation for computing the current-voltage (I-V) characteristics of silicon nanowire transistors (SNWTs). The energy...
Wang, Jing, Polizzi, Eric, Ghosh, Avik, Datta, Supriyo, Lundstrom, Mark
In this work, we present a quantum mechanical approach for the simulation of Si/SiO2 interface roughness scattering in silicon nanowire transistors (SNWTs). The simulation domain is discretized with...
Wang, Jing, Rahman, Anisur, Ghosh, Avik, Klimeck, Gerhard, Lundstrom, Mark
In this letter, we explore the bandstructure effects on the performance of ballistic silicon nanowire transistors (SNWTs). The energy dispersion relations for silicon nanowires are evaluated with an...
Self-Aligned Ballistic Molecular Transistors and Electrically Parallel Nanotube Arrays (2004)
Javey, Ali, Guo, Jing, Farmer, Damon B., Wang, Qian, Yenilmez, Erhan, Gordon, Roy G., ...
Carbon nanotube field-effect transistors with structures and properties near the scaling limit with short (down to 50 nm) channels, self aligned geometries, palladium electrodes with low contact...
Wang, Jing, Polizzi, Eric, Lundstrom, Mark
The silicon nanowire transistor (SNWT) is a promising device structure for future integrated circuits, and simulations will be important for understanding its device physics and assessing its...
Towards Multi-Scale Modeling of Carbon Nanotube Transistors (2003)
Guo, Jing, Datta, Supriyo, Lundstrom, Mark, Anantam, M. P.
Multiscale simulation approaches are needed in order to address scientific and technological questions in the rapidly developing field of carbon nanotube electronics. In this paper, we describe an...
Javey, Ali, Guo, Jing, Farmer, Damon B., Wang, Qian, Wang, Dunwei, Gordon, Roy G., ...
High performance enhancement mode semiconducting carbon nanotube field-effect transistors (CNTFETs) are obtained by combining ohmic metal-tube contacts, high dielectric constant HfO2 films as gate...
High-Field, Quasi-Ballistic Transport in Short Carbon Nanotubes (2003)
Javey, Ali, Guo, Jing, Paulsson, Magnus, Wang, Qian, Mann, David, Lundstrom, Mark, ...
Single walled carbon nanotubes with Pd ohmic contacts and lengths ranging from several microns down to 10 nm are investigated by electron transport experiments and theory. The mean free path (mfp)...
Guo, Jing, Javey, Ali, Dai, Hongjie, Datta, Supriyo, Lundstrom, Mark
Most carbon nanotube field-effect transistors (CNTFETs) directly attach metal source/drain contacts to an intrinsic nanotube channel. When the gate oxide thickness is reduced, such transistors...
A Numerical Study of Scaling Issues for Schottky Barrier Carbon Nanotube Transistors (2003)
Guo, Jing, Datta, Supriyo, Lundstrom, Mark
We performed a comprehensive scaling study of Schottky barrier carbon nanotube transistors using self-consistent, atomistic scale simulations. We restrict our attention to Schottky barrier carbon...
Simulating Quasi-ballistic Transport in Si Nanotransistors (2001)
Kausar Banoo, Jung-Hoon Rhew, Mark Lundstrom, Chi-Wang Shu, Joseph W. Jerome
Electron transport in model Si nanotransistors is examined by numerical simulation using a hierarchy of simulation methods, from full Boltzmann, to hydrodynamic, energy transport, and...
Simulating Quasi-Ballistic Transport in Si nanotransistors (2000)
Kausar Banoo, Jung-hoon Rhew, Mark Lundstrom, Chi-wang Shu, Joseph W. Jerome
Electron transport in model Si nanotransistors is examined by numerical simulation using a hierarchy of simulation methods, from full Boltzmann, to hydrodynamic, energy transport, and...
Performance limits of silicon MOSFET’s (1999)
Farzin Assad, Zhibin Ren, Supriyo Datta, Mark Lundstrom
A procedure for comparing the current vs. voltage characteristics of MOSFETs against their upper limits is described, and a 0.35 μm n-MOS technology is assessed. Channel back-scattering coefficients...
MULTI-FLUX FORMULATION OF THE BOLTZMANN EQUATION FOR CARRIER TRANSPORT IN SEMICONDUCTORS (1998)
Banoo, Kausar, Lundstrom, Mark
This report describes how the Boltzmann Transport Equation for carrier transport in s~~miconductocrasn be formulated in a manner suit able for numerical simulation. It arose from an effort to...
Elementary Scattering Theory of the Si MOSFET (1997)
A one-flux scattering theory of the silicon MOSFET is introduced. The result gives the current-voltage characteristic in terms of scattering parameters rather than a mobility. For long channel...