Meera Chandrasekhar

Publication List Details

Period

1998 - 2007

Number

6

Co-Authors

Pressure Raman effects and internal stress in network glasses (2007)

Wang, Fei, Mamedov, S., Boolchand, P., Goodman, B., Chandrasekhar, Meera

Raman scattering from binary GexSe1-x glasses under hydrostatic pressure shows onset of a steady increase in the frequency of modes of corner-sharing GeSe4 tetrahedral units when the external...

Pressure Raman Effects and Internal Stress in Network Glasses (2004)

Wang, Fei, Mamedov, Sergey, Boolchand, P., Goodman, B., Chandrasekhar, Meera

Raman scattering from binary GexSe1-x glasses under hydrostatic pressure shows onset of a steady increase in the frequency of modes of corner-sharing GeSe4 tetrahedral units when the external...

Advanced Techniques for Transmutation Compensation of Extrinsic Silicon Detectors. (2002)

Meese,J. M., Cowan,D. L., Chandrasekhar,Meera, Glairon,P. J., Lindley,R.

The effects of nuclear transmutation doping in high quality detector grade silicon have been investigated. A theoretical treatment of the concepts of critical fluence for exact compensation, extrema...

Spectroscopic Studies of GaAs/AlGaAs Superlattices under Hydrostatic and Uniaxial Pressures at 8 to 300K. (1998)

Chandrasekhar, Meera

We report on our spectroscopy investigations of bulk semiconductors and quantum well heterostructures under hydrostatic pressures at low temperatures (5 to 300K). We have studied several...

Raman and Photo-Modulated Reflectivity Studies of ZnTe/InAs Semiconductor Heterostructure Under Hydrostatic Pressure, (1998)

Thomas, Robert J., Boley, Mark S., Chandrasekhar, H. R., Chandrasekhar, Meera, Parks, C.

The photo-modulated reflectivity spectrum of a biaxially-strained pseudomorphic ZnTe epilayer, grown on an InAs epilayer by molecular beam epitaxy is studied as a function of applied hydrostatic...

High Pressure Spectroscopic Studies of AlGaAs, GaAs, and II-VI Semiconductors and Heterostructures (1998)

Chandrasekhar, Meera

We have conducted four studies on three different but related materials. The first is a temperature study of a pseudomorphic epilayer of ZnSe on GaAs, where we measured the temperature dependence of...