pMOSFET with 200% mobility enhancement induced by multiple stressors (2006)
Nouri, F, Thirupapuliyur, S, Verheyen, P, Moroz, V, ...
Recessed Si0.8Ge0.2 source/drain (S/D) and a compressive contact etch-stop layer have been successfully integrated resulting in nearly 200% improvement in hole mobility. This is the largest reported...