Blacksberg, Jordana, Hoenk, Michael E., Elliott, S. Tom, Holland, Stephen E., Nikzad, Shouleh
A low temperature process for Sb doping of silicon has been developed as a backsurface treatment for high-purity n-type imaging detectors. Molecular beam epitaxy (MBE) is used to achieve very high...
Ultra-low-temperature homoepitaxial growth of Sb-doped silicon (2008)
Blacksberg, Jordana, Hoenk, Michael E., Nikzad, Shouleh
An ultra-low-temperature process for homoepitaxial growth of high-quality, surface-confined, Sb-doped silicon layers is presented. Non-equilibrium growth by molecular beam epitaxy (MBE) is used to...
Blacksberg, Jordana, Hoenk, Michael E., Elliott, S. Tom, Holland, Stephen E., Nikzad, Shouleh
A low temperature process for Sb doping of silicon has been developed as a backsurface treatment for high-purity n-type imaging detectors. Molecular beam epitaxy (MBE) is used to achieve very high...
Small Inertial Measurement Units- Sources of Error and Limitations on Accuracy (2004)
Inertial measurement units (IMUs) with very low mass and power can be manufactured using micromachined accelerometers and gyroscopes. Six degree of freedom packages which require a few watts of power...
Hoenk, Michael E., Nieh, C. W., Chen, Howard Z., Vahala, Kerry J.
We report the first observation of a lateral junction formed in an alloy due to an abrupt transition from segregated to random AlGaAs alloy compositions. Al0.25Ga0.75As epilayers were grown by...
Zarem, Hal A., Sercel, Peter C., Hoenk, Michael E., Lebens, John A., Vahala, Kerry J.
A shallow zinc diffusion technique is used to selectively disorder a GaAs quantum well creating nanometer scale wire structures. Spectrally resolved cathodoluminescence images of the structures are...
Hoenk, Michael E., Chen, Howard Z., Yariv, Amnon, Morkoç, Hadis, Vahala, Kerry J.
Cathodoluminescence scanning electron microscopy is used to study AlxGa1−x As epilayers grown on a nonplanar substrate by molecular beam epitaxy. Grooves parallel to the [011-bar] direction were...
Hoenk, Michael E., Vahala, Kerry J.
We describe a novel light collection system for cathodoluminescence scanning electron microscopy. Cathodoluminescence emitted from the sample surface enters directly into the facet of an optical...
Hoenk, Michael E., Vahala, Kerry J.
A cathodoluminescence system using a novel optical fiber light collection system is employed to study oval defects in GaAs/Alx Ga1–x As epilayers grown by molecular beam epitaxy. Spatially and...