Oxidation threshold in silicon etching at cryogenic temperatures (2006)
Tillocher, Thomas, Lefaucheux, Philippe, Mellhaoui, Xavier, Dussart, Remi, Ranson, Pierre, Boufnichel, Mohamed, ...
In silicon etching in SF6/O2 plasmas, an oxidation threshold appears when the oxygen content is large enough. A SiOxFy passivation layer is formed under such conditions. This threshold is reached at...
Oxidation threshold in silicon etching at cryogenic temperatures (2006)
Tillocher, Thomas, Lefaucheux, Philippe, Mellhaoui, Xavier, Dussart, Remi, Ranson, Pierre, Boufnichel, Mohamed, ...
In silicon etching in SF6/O2 plasmas, an oxidation threshold appears when the oxygen content is large enough. A SiOxFy passivation layer is formed under such conditions. This threshold is reached at...