N. A. Morley

Direct measurement of the electronic spin diffusion length in a fully functional organic spin valve by low-energy muon spin rotation (2009)

Drew, Alan J., Hoppler, Julian, Schulz, Leander, Pratt, F. L., Desai, P., Shakya, P., ...

Electronic devices that use the spin degree of freedom hold unique prospects for future technology. The performance of these 'spintronic' devices relies heavily on the efficient transfer of spin...

Direct measurement of the electronic spin diffusion length in a fully functional organic spin valve by low-energy muon spin rotation (2009)

Drew, Alan J., Hoppler, Julian, Schulz, Leander, Pratt, F. L., Desai, P., Shakya, P., ...

Electronic devices that use the spin degree of freedom hold unique prospects for future technology. The performance of these 'spintronic' devices relies heavily on the efficient transfer of spin...

Intrinsic Mobility Limit for Anisotropic Electron Transport in Alq₃ (2008)

Drew, Alan J., Pratt, F. L., Hoppler, Justin, Schulz, Leander, Malik-Kumar, Vivek, Morley, N. A., ...

Muon spin relaxation has been used to probe the charge carrier motion in the molecular conductor Alq₃ (tris[8-hydroxy-quinoline] aluminum). At 290 K, the magnetic field dependence of the muon spin...

Intrinsic Mobility Limit for Anisotropic Electron Transport in Alq₃ (2008)

Drew, Alan J., Pratt, F. L., Hoppler, Justin, Schulz, Leander, Malik-Kumar, Vivek, Morley, N. A., ...

Muon spin relaxation has been used to probe the charge carrier motion in the molecular conductor Alq₃ (tris[8-hydroxy-quinoline] aluminum). At 290 K, the magnetic field dependence of the muon spin...

Direct measurement of the electronic spin diffusion length in a fully functional organic spin valve by low-energy muon spin rotation (2008)

Drew, A. J., Hoppler, J, Schulz, L, Pratt, F. L., Desai, P, Shakya, P, ...

Electronic devices that use the spin degree of freedom hold unique prospects for future technology. The performance of these 'spintronic' devices relies heavily on the efficient transfer of spin...

Comparison between the in-plane anisotropies and magnetostriction constants of thin epitaxial Fe films grown on GaAs and Ga0.8In0.2As substrates, with Cr overlayers (2006)

Morley, N.A., Gibbs, M.R.J., Ahmad, E., Will, I.G., Xu, Y.B.

Thin epitaxial Fe films grown on GaAs(100) and Ga0.8In0.2As(100) substrates were investigated to determine how tuning the lattice constant mismatch between the Fe and the substrate may change the...

Comparison between the in-plane anisotropies and magnetostriction constants of thin epitaxial Fe films grown on GaAs and Ga0.8In0.2As substrates, with Cr overlayers (2006)

Morley, N.A., Gibbs, M.R.J., Ahmad, E., Will, I.G., Xu, Y.B.

Thin epitaxial Fe films grown on GaAs(100) and Ga0.8In0.2As(100) substrates were investigated to determine how tuning the lattice constant mismatch between the Fe and the substrate may change the...

Comparison between the in-plane anisotropies and magnetostriction constants of thin epitaxial Fe films grown on GaAs and Ga0.8In0.2As substrates, with Cr overlayers (2006)

Morley, N.A., Gibbs, M.R.J., Ahmad, E., Will, I.G., Xu, Y.B.

Thin epitaxial Fe films grown on GaAs(100) and Ga0.8In0.2As(100) substrates were investigated to determine how tuning the lattice constant mismatch between the Fe and the substrate may change the...