Tunable Kondo effect in a single donor atom (2009)
Lansbergen, G. P., Tettamanzi, G. C., Verduijn, J., Collaert, N., Biesemans, S., Blaauboer, M., ...
The Kondo effect has been observed in a single gate-tunable atom. The measurement device consists of a single As dopant incorporated in a Silicon nanostructure. The atomic orbitals of the dopant are...
Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET (2008)
Lansbergen, G P, Rahman, R, Wellard, C J, Woo, I, Caro, J, Collaert, N, ...
The ability to build structures with atomic precision is one of the defining features of nanotechnology. Achieving true atomic- level functionality, however, requires the ability to control the...
Level Spectrum of Single Gated As Donors (2008)
Lansbergen, G. P., Rahman, R., Caro, J., Collaert, N., Biesemans, S., Klimeck, Gerhard, ...
We study the electrical transport through single As donors incorporated in the channel of a FinFET, i.e. a donor in a three-terminal geometry. By means of spectroscopic measurements in conjuction...
Level Spectrum of Single Gated As Donors (2008)
Lansbergen, Gabriel P., Rahman, Rajib, Caro, J., Collaert, N., Biesemans, S., Klimeck, G., ...
We study the electrical transport through single As donors incorporated in the channel of a FinFET, i.e. a donor in a three-terminal geometry. By means of spectroscopic measurements in conjuction...
Impact of fin width on digital and analog performances of n-FinFETs (2007)
Mercha, A, Parvais, B, Loo, J, Gustin, C, Dehan, M, ...
This paper examines the impact of an important geometrical parameter of FinFET devices, namely the fin width. From static and low-frequency measurements on n-FinFETs (I-V, C-V and 1/f noise),...
Sub-threshold channels at the edges of nanoscale triple-gate silicon transistors (2007)
Sellier, H., Lansbergen, G. P., Caro, J., Collaert, N., Ferain, I., Jurczak, M., ...
We investigate by low-temperature transport experiments the sub-threshold behavior of triple-gate silicon field-effect transistors. These three-dimensional nano-scale devices consist of a...
Transport spectroscopy of a single dopant in a gated silicon nanowire (2007)
Sellier, H., Lansbergen, G. P., Caro, J., Collaert, N., Ferain, I., Jurczak, M., ...
We report on spectroscopy of a single dopant atom in silicon by resonant tunneling between source and drain of a gated nanowire etched from silicon on insulator. The electronic states of this dopant...
Transport spectroscopy of a single dopant in a gated silicon nanowire (2006)
Sellier, H., Lansbergen, G. P., Caro, J., Collaert, N., Ferain, I., Jurczak, M., ...
We report on spectroscopy of a single dopant atom in silicon by resonant tunneling between source and drain of a gated nanowire etched from silicon on insulator. The electronic states of this dopant...
Sub-threshold channels at the edges of nanoscale triple-gate silicon transistors (2006)
Sellier, H., Lansbergen, G. P., Caro, J., Collaert, N., Ferain, I., Jurczak, M., ...
We investigate by low-temperature transport experiments the sub-threshold behavior of triple-gate silicon field-effect transistors. These three-dimensional nano-scale devices consist of a...
Collaert, N, Kilchytska, V, Jurczak, M, Flandre, D
In this work, the effective mobility in n- and p-channel FinFETS with silicon oxynitride and HfO2 gate dielectrics and TaN gate electrode is studied as a function of the inversion charge density...