Expected Performance of the ATLAS Experiment - Detector, Trigger and Physics (2008)
Abat, E., Abbott, B., Abdallah, J., Abdelalim, A. A., Abdesselam, A., ...
A detailed study is presented of the expected performance of the ATLAS detector. The reconstruction of tracks, leptons, photons, missing energy and jets is investigated, together with the performance...
O. Brandt, R. L. Hawley, J. Kohler, J. O. Hagen, E. M. Morris, T. Dunse, ...
We compare coincident data from the European Space Agency's Airborne SAR/Interferometric Radar Altimeter System (ASIRAS) with ground-based Very High Bandwidth (VHB) stepped-frequency radar...
Misra, P, Behn, U, Brandt, O, Grahn, H T, Imer, B, Nakamura, S, ...
We use photoreflectance (PR) spectroscopy to study the electronic band structure modification of GaN films grown along different nonpolar orientations due to biaxial, anisotropic in-plane strain. The...
Large spin splitting of GaN electronic states induced by Gd doping (2005)
Sapega, V. F., Ramsteiner, M., Dhar, S., Brandt, O., Ploog, K. H.
We present a detailed study of the magnetic-field and temperature-dependent polarization of the near-band-gap photoluminescence in Gd-doped GaN layers. Our study reveals an extraordinarily strong...
Dynamic polarization filtering in anisotropically strained M-plane GaN films (2005)
Omae, K, Flissikowski, T, Misra, P, Brandt, O, Grahn, HT, Kojima, K, ...
Suspended Particles in a Sound Field (2005)
Brandt, O., Breund, H., Hiedemann, E.
A simple formula is derived which shows the relationship between the aerosol particle amplitude and the amplitude of the gas.
Dynamic polarization filtering in anisotropically strained M-plane GaN films (2005)
Omae, K, Flissikowski, T, Misra, P, Brandt, O, Grahn, HT, Kojima, K, ...
GaN:Gd: A superdilute ferromagnetic semiconductor with a Curie temperature above 300 K (2004)
Dhar, S., Brandt, O., Ramsteiner, M., Sapega, V. F., Ploog, K. H.
We investigate the magnetic and magneto-optic properties of epitaxial GaN:Gd layers as a function of the external magnetic field and temperature. An unprecedented magnetic moment is observed in this...
X-ray diffraction peak profiles from threading dislocations in GaN epitaxial films (2004)
Kaganer, V. M., Brandt, O., Trampert, A., Ploog, K. H.
We analyze the lineshape of x-ray diffraction profiles of GaN epitaxial layers with large densities of randomly distributed threading dislocations. The peaks are Gaussian only in the central, most...
Brandt, O, Sun, Y J, Schonherr, H P, Ploog, K H, Waltereit, P, Lim, S H, ...
We present a simple strategy that minimizes the impact of surface segregation of In during the growth of (In,Ga) N/GaN multiple quantum wells by plasma-assisted molecular-beam epitaxy and...
Deatcher, C.J. *, Liu, C. *, Lada, M., Cullis, A.G., Sung, Y.J., ...
Reflectometry using a white light source has been applied to in situ monitoring of metal organic vapour phase epitaxy of InGaN alloy structures on GaN buffer layers. Both InGaN epilayers 60-350 nm in...
Deatcher, C.J., Liu, C., Lada, M., Cullis, A.G., Sung, Y.J., ...
Reflectometry using a white light source has been applied to in situ monitoring of metal organic vapour phase epitaxy of InGaN alloy structures on GaN buffer layers. Both InGaN epilayers 60-350 nm in...
Deatcher, C.J., Liu, C., Lada, M., Cullis, A.G., Sung, Y.J., ...
Reflectometry using a white light source has been applied to in situ monitoring of metal organic vapour phase epitaxy of InGaN alloy structures on GaN buffer layers. Both InGaN epilayers 60-350 nm in...
Watson, I.M.*, Jahn, U., Dahr, S., Brandt, O., Grahn, H.T., Ploog, K.H.
We study the quantum efficiency () and transition energy (Et) as a function of excitation density and temperature in (In,Ga)N/GaN multiple quantum wells (MQWs) fabricated by molecular-beam epitaxy...
Watson, I.M., Jahn, U., Dahr, S., Brandt, O., Grahn, H.T., Ploog, K.H.
We study the quantum efficiency () and transition energy (Et) as a function of excitation density and temperature in (In,Ga)N/GaN multiple quantum wells (MQWs) fabricated by molecular-beam epitaxy...
Watson, I.M., Jahn, U., Dahr, S., Brandt, O., Grahn, H.T., Ploog, K.H.
We study the quantum efficiency () and transition energy (Et) as a function of excitation density and temperature in (In,Ga)N/GaN multiple quantum wells (MQWs) fabricated by molecular-beam epitaxy...
Sun, Y J, Brandt, O, Cronenberg, S, Dhar, S, Grahn, H T, Ploog, K H, ...
M-plane In0.1Ga0.9N(1 (1) over bar 00) multiple quantum wells were grown on gamma-LiAlO2(100) by plasma-assisted molecular-beam epitaxy. The high brightness of the photoluminescence of these multiple...
Indentation of GaN: A study of the optical activity and strain state of extended defects (2002)
Jahn, U., Trampert, A., Wagner, T., Brandt, O., Ploog, K. H.
Giehler, M., Ramsteiner, M., Waltereit, P., Brandt, O., Ploog, K.H., Obloh, H.
We study the influence of heteroepitaxy as well as intrinsic anharmonicity of the E2(high) and A1(LO) lattice vibrations in wurtzite GaN layers. The intrinsic phononSphonon scattering of bulk GaN...
Optical properties of wurtzite AlxGa1-xN (x (2001)
Cobet, C., Esser, N., Zetter, J. T., Richter, W., Waltereit, P., Brandt, O., ...
Heteroepitaxy of Cubic GaN (1997)
Trampert, A., Brandt, O., Yang, H., Ploog, K.
We report on the epitaxial growth and the microstructure of cubic CaN. The layers investigated are deposited by plasma-assisted molecular beam epitaxy on GaAs (001) and (311)A substrates....
Heteroepitaxy of Cubic GaN (1997)
Trampert, A., Brandt, O., Yang, H., Ploog, K.
We report on the epitaxial growth and the microstructure of cubic CaN. The layers investigated are deposited by plasma-assisted molecular beam epitaxy on GaAs (001) and (311)A substrates....
Heteroepitaxy of Cubic GaN (1997)
Trampert, A., Brandt, O., Yang, H., Ploog, K.
We report on the epitaxial growth and the microstructure of cubic CaN. The layers investigated are deposited by plasma-assisted molecular beam epitaxy on GaAs (001) and (311)A substrates....
Simulation als Feinplanungsinstrument in komplexen Fertigungsabläufen (1994)
Die Integration von Simulation in PPS- und BDE-Systeme bietet einen Ansatzpunkt zur Erweiterung des Einsatzbereiches der Simulationsanwendungen. Voraussetzung hierfür ist die Möglichkeit der...
Concepts and Application of SIMPLE++ (1994)
SIMPLE++ is a fully object-oriented simulation tool, which was first designed and implemented at the Fraunhofer-Institute for Manufacturing Engeneering and Automation as SIMPLEmac and reimplemented...
Nucleation, relaxation and redistribution of Si layers in GaAs. (1993)
Brandt, O., Crook, G., Ploog, K., Bierwolf, R., Hohenstein, M., Maier, M., ...
We study the structural properties of Si layers of different thickness (0.1-1.3 nm) inserted in GaAs by solidsource molecular beam epitaxy. Using high- resolution electron microscopy, we demonstrate...
Redistribution of epitaxial Si on -001- GaAs during overgrowth by GaAs. (1991)
Brandt, O., Crook, G.E., Ploog, K., Maier, M., Wagner, J.
We examine the stability of pseudomorphic submonolayer Si films embedded in (001) GaAs by molecular-beam epitaxy. Secondary ion-mass spectrometry depth profiling reveals the presence of 10high19 Si-...
P141-T A New Array Format for Protein Kinase Substrate Determination
Peptide arrays are useful tools to characterize antibodies, enzyme substrates or sequence specificities of interaction partners with given peptide sequences (e.g., SH2, SH3, MH2 and other domains)....