Compensation-dependent in-plane magnetization reversal processes in Ga1-xMnxP1-ySy (2008)
Stone, P. R., Bihler, C., Kraus, M., Scarpulla, M. A., Beeman, J. W., Yu, K. M., ...
We report the effect of dilute alloying of the anion sublattice with S on the in-plane uniaxial magnetic anisotropy and magnetization reversal process in Ga1-xMnxP as measured by both ferromagnetic...
Stone, P. R., Alberi, K., Tardif, S. K. Z., Beeman, J. W., Yu, K. M., Walukiewicz, W., ...
We have investigated the effect of partial isovalent anion substitution in Ga1-xMnxAs on electrical transport and ferromagnetism. Substitution of only 2.4% of As by P induces a metal-insulator...
Scarpulla, M. A., Farshchi, R., Stone, P. R., Chopdekar, R. V., Yu, K. M., Suzuki, Y., ...
We present a detailed investigation of the magnetic and magnetotransport properties of thin films of ferromagnetic Ga1-xMnxAs synthesized using ion implantation and pulsed-laser melting (II-PLM). The...
Hydrogen patterning of Ga1-xMnxAs for planar spintronics (2007)
Farshchi, R., Ashby, P. D., Hwang, D. J., Grigoropoulos, C. P., Chopdekar, R. V., Suzuki, Y., ...
We demonstrate two patterning techniques based on hydrogen passivation of Ga1-xMnxAs to produce isolated ferromagnetically active regions embedded uniformly in a paramagnetic, insulating host. The...
Chemical nanomachining of silicon by gold-catalyzed oxidation (2007)
Robinson, J. T., Liddle, J. A., Evans, P. G., Dubon, O. D.
A chemical nanomachining process for the rapid, scalable production of nanostructure assemblies from silicon-on-insulator is demonstrated. The process is based on the spontaneous, local oxidation of...
Suppression of hole-mediated ferromagnetism in GaMnP by hydrogen (2007)
Bihler, C., Kraus, M., Brandt, M. S., Goennenwein, S. T. B., Opel, M., Scarpulla, M. A., ...
We report the successful passivation of the Mn acceptors in GaMnP upon exposure to a remote dc hydrogen plasma. The as-grown films are non-metallic and ferromagnetic with a Curie temperature of...
Bihler, C., Kraus, M., Huebl, H., Brandt, M. S., Goennenwein, S. T. B., Opel, M., ...
We report the observation of ferromagnetic resonance (FMR) and the determination of the magnetocrystalline anisotropy in (100)-oriented single-crystalline thin film samples of GaMnP with x=0.042. The...
Sculpting the shape of semiconductor heteroepitaxial islands: from dots to rods (2007)
Robinson, J. T., Walko, D. A., Arms, D. A., Tinberg, D. S., Evans, P. G., Cao, Y., ...
In the Ge on Si model heteroepitaxial system, metal patterns on the silicon surface provide unprecedented control over the morphology of highly ordered Ge islands. Island shape including nanorods and...
Acbas, G., Ohkubo, I., Christen, H., Mandrus, D., ...
We present measurement and analysis techniques that allow the complete complex magneto-conductivity tensor to be determined from mid-infrared (11-1.6 micron; 100-800 meV) measurements of the complex...
Compositional tuning of ferromagnetism in Ga1-xMnxP (2006)
Farshchi, R., Scarpulla, M. A., Stone, P. R., Yu, K. M., Sharp, I. D., Beeman, J. W., ...
We report the magnetic and transport properties of Ga1-xMnxP synthesized via ion implantation followed by pulsed laser melting over a range of x, namely 0.018 to 0.042. Like Ga1-xMnxAs, Ga1-xMnxP...
Stone, P. R., Scarpulla, M. A., Farshchi, R., Sharp, I. D., Beeman, J. W., Yu, K. M., ...
We have measured the X-ray absorption (XAS) and X-ray magnetic circular dichroism (XMCD) at the Mn L3,2 edges in ferromagnetic Ga1-xMnxP films for 0.018
Sculpting the shape of semiconductor heteroepitaxial islands: from dots to rods (2006)
Robinson, J.T., Walko, D.A., Arms, D.A., Tinberg, D.S., Evans, P.G., Cao, Y., ...
Compositional tuning of ferromagnetism in Ga1-xMnxP (2006)
Farshchi, R., Scarpulla, M.A., Stone, P.R., Yu, K.M., Sharp, I.D., Beeman, J.W., ...
Mn L3,2 X-ray absorption and magnetic circular dichroism in ferromagnetic Ga1-xMnxP (2006)
Stone, P. R., Scarpulla, M. A., Farshchi, R., Sharp, I. D., Haller, E. E., Dubon, O. D., ...
We have measured the X-ray absorption (XAS) and X-ray magnetic circular dichroism (XMCD)at the Mn L3,2 edges in ferromagnetic Ga1-xMnxP for 0.018
Mn L3,2 X-ray absorption and magnetic circular dichroism in ferromagnetic Ga1-xMnxP (2006)
Stone, P.R., Scarpulla, M.A., Farshchi, R., Sharp, I.D., Haller, E.E., Dubon, O.D., ...
A Chemical Approach to 3-D Lithographic Patterning of Si and Ge Nanocrystals (2005)
Sharp, I.D., Xu, Q., Yi, D.O., Liao, C.Y., Ager III, J.W., Beeman, J.W., ...
Ion implantation into silica followed by thermal annealing is an established growth method for Si and Ge nanocrystals. We demonstrate that growth of Group IV semiconductor nanocrystals can be...
Multiband GaNAsP Quaternary Alloys (2005)
Yu, K.M., Walukiewicz, W., Ager III, J.W., Bour, D., Farshchi, R., Dubon, O.D., ...
Mutual Passivation in Dilulte GaNxAs1-x Alloys (2005)
Yu, K.M., Walukiewicz, W., Wu, J., Mars, D.E., Scarpulla, M.A., Dubon, O.D., ...
Highly Mismatched Alloys for Intermediate Band Solar Cells (2005)
Walukiewicz, W., Yu, K.M., Wu, J., Ager III, J.W., Shan, W., Scrapulla, M.A., ...
Scarpulla, M. A., Cardozo, B. L., Oo, W. M. Hlaing, McCluskey, M. D., Dubon, O. D.
We demonstrate that in ferromagnetic Ga1-xMnxP exchange is mediated by holes localized in a Mn-derived band. For x
Carrier Concentration Dependencies of Magnetization & Transport in Ga1-xMnxAs1-yTey (2004)
Scarpulla, M. A., Yu, K. M., Walukiewicz, W., Dubon, O. D.
We have investigated the transport and magnetization characteristics of Ga1-xMnxAs intentionally compensated with shallow Te donors. Using ion implantation followed by pulsed-laser melting, we vary...
Fabrication of GaNxAs1-x Quantum Structures by Focused Ion Beam Patterning (2004)
Alberi, K., Minor, A., Scarpulla, M. A., Chung, S. J., Mars, D. E., Yu, K. M., ...
A novel approach to the fabrication of GaNxAs1-x quantum dots and wires via ion beam patterning is presented. Photomodulated reflectance spectra confirm that N can be released from the As sublattice...
Synthesis and optical properties of II-O-VI highly mismatched alloys (2004)
Yu, K.M., Walukiewicz, W., Shan, W., Wu, J., Beeman, J.W., Scarpulla, M.A., ...
Diluted II-VI Oxide Semiconductors with Multiple Band Gaps (2003)
Yu, K. M., Walukiewicz, W., Wu, J., Shan, W., Beeman, J. W., Scarpulla, M. A., ...
We report the realization of a new multi-band-gap semiconductor. The highly mismatched alloy Zn1-yMnyOxTe1-x has been synthesized using the combination of oxygen ion implantation and pulsed laser...
Diluted magnetic semiconductors formed by an ion implantation and pulsed-laser melting (2003)
Scarpulla, M.A., Daud, U., Yu, K.M., Monteiro, O., Liliental-Weber, Z., Zakharov, D., ...
Stimulated Far Infrared Emission from Copper-Doped Germanium Crystals (1997)
Sirmain, G., Reichertz, L.A., Dubon, O.D., Haller, E.E., Hansen, W.L., Bründermann, E., ...
Double acceptor doped Ge: A new medium for inter-valence-band lasers (1996)
Bründermann, E., Linhart, A.M., Reichertz, L., Röser, H.P., Dubon, O.D., Hansen, W.L., ...
Miniaturization of p-Ge Lasers: Progress toward continuous wave operation (1996)
Bründermann, E., Linhart, A.M., Röser, H.P., Dubon, O.D. (1), Hansen, W.L.(1), Haller, E.E.(1)
Berlin 240796.