P. Albrecht

Publication List Details

Period

1968 - 2002

Number

34

Co-Authors

1.3 mu m BH-FP laser with integrated monitor photodiode, 45 degrees reflector for bottom side emission employing full on-wafer fabrication (2002)

Janiak, K., Albrecht, P., Fidorra, S., Heidrich, H., Rehbein, W., Roehle, H., ...

We report on a 1.3 mu m FP-BH laser with monolithically integrated monitor photodiode and 45 degrees reflector for bottom side emission of the laser light. The devices are fabricated by employing a...

Timing of early diagenetic sulfurization of organic matter: A precursor-product relationship in Holocene sediments of the anoxic Cariaco Basin, Venezuela (2000)

Sinninghe Damsté, J.S., Werne, J., Hollander, D.J., Behrens, A., Schaeffer, P., Albrecht, P.

The incorporation of reduced inorganic sulfur into organic matter is a significant mechanism for the preservation of functionalized organic compounds in the sedimentary environment, but the timing of...

Optical crosstalk within monolithic transceiver ICs on GaInAsP/InP (2000)

Kaiser, R., Hamacher, M., Heidrich, H., Albrecht, P., Janiak, K., Malchow, S., ...

Static optical crosstalk within monolithic 1.3 mu m/1.5 mu m transceiver photonic integrated circuits (PICs) was studied. The efficiency of different optical barriers is analysed and a maximum...

Monolithic integration of lasers, photodiodes, waveguides and spot size converters on GaInAsP/InP for photonic IC applications (2000)

Hamacher, M., Kaiser, R., Heidrich, H., Albrecht, P., Borchert, B., Janiak, K., ...

This paper reports on 1.3 mu m complex coupled DFB lasers, 1.55 mu m (wavelength selective) photodiodes and passive spot size converters integrated with Y-shaped waveguide structures on InP,...

Monolithically integrated 1.5 mu m/1.3 mu m transceiver modules for full-duplex operation (1999)

Hamacher, M., Heidrich, H., Kaiser, R., Albrecht, P., Ebert, W., Franke, D., ...

1.5/1.3 mu m transceiver-photonic integrated circuits (PICs) with in-line and Y-junction architecture including a 1.3- mu m wavelength-selective photodetector building block have been fabricated. The...

STEPS TOWARD DETERMINATION OF THE SIZE AND STRUCTURE OF THE BROAD-LINE REGION IN ACTIVE GALACTIC NUCLEI. XII. GROUND-BASED MONITORING OF 3C 390.3 (1998)

Dietrich, M., Peterson, B.M., Albrecht, P., Altmann, M., Barth, A.J., Bennie, P.J., ...

Results of a ground-based optical monitoring campaign on 3C 390.3 in 1994-1995 are presented. The broadband fluxes (B, V , R, and I), the spectrophotometric optical continuum flux Fλ(5177 Å),...

Steps toward Determination of the Size and Structure of the Broad-Line Region in Active Galactic Nuclei. XII. Ground-based Monitoring of 3C 390.3 (1998)

Dietrich, M, Peterson, B. M, Albrecht, P, Altmann, M, Barth, A. J, Bennie, P. J, ...

Results of a ground-based optical monitoring campaign on 3C 390.3 in 1994-1995 are presented. The broadband fluxes (B, V, R, and I), the spectrophotometric optical continuum flux F lambda (5177 A),...

Full-duplex WDM transceiver PICs (1998)

Hamacher, M., Heidrich, H., Kaiser, R., Albrecht, P., Ebert, W., Malchow, S., ...

Results on the development of monolithically integrated bi-directional full duplex WDM GaInAsP-InP transceivers for dual spectral window operation (1.3 and 1.5 mu m) are reported. Their fabrication...

Monolithically integrated transceivers on InP: The development of a generic integration concept and its technological challenges (1998)

Kaiser, R., Hamacher, M., Heidrich, H., Albrecht, P., Ebert, W., Gibis, R., ...

A versatile and extendable integration process suitable for future economic fabrication of photonic integrated circuits (PICs) is described. The advantages and technological challenges are emphazised...

Metalorganic molecular beam epitaxial growth of semi-insulating GaInAsP( lambda g=1.05 mu m):Fe optical waveguides for integrated photonic devices (1998)

Kunzel, H., Albrecht, P., Ebert, S., Gibis, R., Harde, P., Kaiser, R., ...

Iron doping of InP and GaInAsP( lambda g=1.05 mu m) layers grown by metalorganic molecular beam epitaxy was studied using elemental source material in combination with a conventional effusion cell....

Steps toward Determination of the Size and Structure of the Broad-Line Region in Active Galactic Nuclei. X. Variability of Fairall 9 from Optical Data (1997)

Santos-Lleo, M, Chatzichristou, E, De Oliveira, C. M, Winge, C, Alloin, D, Peterson, B. M, ...

The results of an optical monitoring campaign on the active nucleus in the luminous Seyfert 1 galaxy Fairall 9 are presented. This campaign was undertaken in parallel with ultraviolet spectroscopic...

MOMBE growth of semi-insulating GaInAsP(lambda g=1.05 mu m):Fe optical waveguides for integrated photonic devices (1997)

Kunzel, H., Albrecht, P., Ebert, S., Gibis, R., Harde, P., Kaiser, R., ...

Iron doping using elemental source material evaporated from a conventional effusion cell was applied during MOMBE growth of semi-insulating InP and GaInAsP( lambda =1.05 mu m) for waveguide...

Polarization independent integrated mode transformer for uncladded InGaAsP/InP rib waveguides without epitaxial regrowth (1996)

Albrecht, P., Heidrich, H., Loffler, R., Morl, L., Reier, F., Weinert, C.M.

A polarization insensitive fibre port for integration in complex PICs has been demonstrated. The spot-size transformation is performed by a thickness taper integrated with an uncladded InGaAsP/InP...

Bi-directional photonic integrated transceivers for optical communication systems (1996)

Heidrich, H., Hamacher, M., Kaiser, R., Wenger, G., Albrecht, P., Loffler, R., ...

Bi-directional, full duplex transceiver InP/GaInAsP PIC architectures with high crosstalk suppression ratio values for single and dual spectral window operation (1.3 mu m and 1.5 mu m) are reported...

Integration of polarisation independent mode transformers with uncladded InGaAsP/InP rib waveguides (1996)

Albrecht, P., Heidrich, H., Loffler, R., Mori, L., Reier, F., Weinert, C.M.

Polarisation independent mode transformers were fabricated by core thickness tapering in uncladded InGaAsP/InP rib waveguides intended for integration into PICs. No epitaxial regrowth is needed. The...

First heterodyne receiver frontend module including a polarization diversity receiver OEIC on InP (1995)

Hamacher, M., Trommer, D., Heidrich, H., Albrecht, P., Jacumeit, G., Passenberg, W., ...

For the first time a packaged polarization diversity coherent receiver OEIC including detector units (photodetectors, JFET, load resistor) has been fabricated with the following data: waveguide loss...

Integration of a tunable 4-section DBR laser within polarization diversity heterodyne receiver PICs (1994)

Kaiser, R., Fidorra, F., Trommer, D., Malchow, S., Albrecht, P., Franke, D., ...

Polarization diversity heterodyne receiver PICs including a tunable 4-section DBR laser as a local oscillator have been successfully fabricated for the first time. PIC design and fabrication are...

Integration of tunable DBR-lasers with waveguides for heterodyne receiver OEIC applications using selective area MOVPE (1994)

Kaiser, R., Fidorra, F., Heidrich, H., Albrecht, P., Rehbein, W., Malchow, S., ...

For the first time we present the integration of a tunable buried four-section DBR-laser butt coupled to a directional coupler based on semi-insulating strip loaded (InGaAsP/InP):Fe waveguides by...

Organic Matter of the Mulhouse Basin, France: A synthesis (1993)

Sinninghe Damsté, J.S., Hofmann, P., Huc, A.Y., Carpentier, B., Schaeffer, P., Albrecht, P., ...

The lower Oligocene evaporite sequence of the Mulhouse Basin (France) contains organic matter-rich marl deposits. These marls display an overall cyclic variation of sedimentation rate, organic carbon...

High resistivity, low loss InGaAlAs/InP optical waveguides grown by low-temperature MBE (1992)

Kunzel, H., Grote, N., Albrecht, P., Bottcher, J., Bornholdt, C.

The authors present a study of material properties relevant to optical waveguides of MBE (molecular-beam epitaxy) grown InGaAlAs ( gamma g=1.06 mu m) layers lattice-matched to InP. In particular, the...

Low-temperature MBE-grown In0.52Ga0.18Al0.30As/InP optical waveguides (1992)

Kunzel, H., Grote, N., Albrecht, P., Bottcher, J., Bornholdt, C.

The MBE growth of In0.52Ga0.18Al0.30As ( lambda g=1.06 mu m) layers in the temperature range of 400-450 degrees C was demonstrated to give high-quality optical waveguides which not only exhibit low...

Polarisation diversity waveguide network integrated on InP for a coherent optical receiver front-end (1991)

Heidrich, H., Hamacher, M., Albrecht, P., Engel, H., Hoffmann, D., Imhof, D., ...

The fabrication of an integrated GaInAsP/InP polarisation diversity circuit is described. The optoelectronic integrated circuit (OIC) is designed with respect to high process tolerances and easy...

Polarization converter and splitter for a coherent receiver optical network on InP (1990)

Albrecht, P., Hamacher, M., Heidrich, H., Hoffmann, D., Schlak, M., ...

The key elements of a coherent optical receiver network using a polarization diversity scheme are summarized. The principles of operation and design of the elements for monolithic integration of the...

Tunable TE/TM-mode convertor on (001)-InP-substrate (1990)

Schlak, M., Weinert, C.M., Albrecht, P., Nolting, H.P.

A TE/TM-mode converter for an operating wavelength of 1.56 mu m has been fabricated on (001)-InP substrate. Polarisation conversion of 45 degrees suitable for operation in a polarisation diversity...

The development of a polarization-diversity heterodyne receiver-waveguide switch on InP (1990)

Albrecht, P., Hamacher, M., Heidrich, H., Hoffmann, D., Nolting, H.P., Schlak, M., ...

After a brief discussion of the problem of providing terminal equipment fully to utilize the transmission capacity of the single-mode optical fibre, the article shows the proposed architecture of an...

Waveguide-mirror components InGaAsP/InP (1988)

Albrecht, P., Doldissen, W., Niggebrugge, U., Schmid, H.

Directional couplers and beam splitters employing waveguide mirrors have been fabricated in InGaAsP/InP and characterized. Following BPM and effective index calculations the main loss mechanisms are...

Self-aligned waveguide mirrors for optical integration on InGaAsP/InP (1987)

Albrecht, P., Doldissen, W., Niggerbrugge, U., Nolting, H.P., Schmid, H.

Totally reflecting mirrors for monomode rib waveguides in InGaAsP/InP were fabricated by reactive ion etching using a self-aligning technique. For eight mirrors in series an average excess loss of...

Electro-optic modulators in GaInAsP/InP (1986)

Krauser, J., Albrecht, P., Bornholdt, C., Doldissen, W., Niggebrugge, U., ...

The semiconductor material system InGaAsP on InP is being increasingly used for waveguide based electro-optic devices such as phase modulators, directional coupler modulators, and switches with the...

Light guiding and electrooptical modulation in InGaAsP/InP double heterostructures (1983)

Albrecht, P., Bach, H.G., Bornholdt, C., Doldissen, W., Franke, D., Grote, N., ...

The fabrication of long rig-waveguides in the InGaAsP system with low loss suitable for integrated optics has been demonstrated. Furthermore, the authors showed, for the first time, electrooptical...

Hemagglutinin-specific complement-dependent antibody response to influenza infection

Verbonitz, MW, Ennis, FA, Hicks, JT, Albrecht, P

The host defense response to influenza infection is complex. Specific humoral antibodies develop to the strain-specific surface antigens, the hemagglutinin and the neuraminidase, and to the internal...

Rapid identification of tick-borne encephalitis virus by the fluorescent antibody technique*

Albrecht, P., Kožuch, O.

An immunofluorescence technique in tissue cultures and in mice, developed to provide a rapid means of identification of group B arboviruses, has been used to identify the tick-borne encephalitis...