A new compact model for the avalanche effect in InAlAs/InGaAs HBTs (2006)
Weiß, O., Baureis, P., Kellmann, N., Weber, N., Weigel, R.
This letter presents a new compact model for the avalanche effect in InAlAs/InGaAs heterojunction bipolar transistors. Unlike previous models, it is based on the formulation of the avalanche...
Correcting the output conductance for self-heating in InAlAs/InGaAs HBTs (2006)
Weiss, O., Baureis, P., Kellmann, N., Weber, N., Weigel, R.
Two methods to correct the output characteristics of a heterojunction bipolar transistor (HBT) for self-heating, which especially suit material systems with low thermal conductivity and high...
Popken, G., Baureis, P., Hartmann, M., Milosiu, H., Neubauer, H., Oehler, F., ...
In this paper the design of a fully integrated 2.4-GHz ISM-band transmitter for a localization application will be presented. The signal path includes DAC, anti-alias filter, IQ-modulator and power...
Operational amplifier design using GaAs MESFET for temperature applications up to 350 deg C (1996)
Baureis, P., Gerber, J., Würfl, J., Janke, B.
A GaAs-MESFET technology based on highly stable ohmic and Schottky contacts is used to develop a two stage operational amplifier circuit with stable operation up to 350 deg C for sensor signal...
Characterization and modeling of integrated photosensors in standard CMOS technology (1996)
This paper describes the electrical and spectral characteristics of different layers to construct photosensitive elements in standard 1.2 mu m CMOS technology. The use of commercial CMOS processes...
Die vorliegende Arbeit beschreibt, für den Schaltungsentwickler verständlich, den Aufbau und die Funktionsweise von Gallium-Arsenid Heterobipolartransistoren. Es werden analytische...
ASICs in Mikrosystemen. Beispiele aus dem bayerischen Forschungsverbund FORMIKROSYS (1995)
Weber, N., Baureis, P., Schlag, U.
Im immer stärker wachsenden Feld der Mikrosystemtechnik besteht grundsätzlich ein erheblicher Bedarf an miniaturisierten Komponenten, die in kompakter Form miteinander aufgebaut werden müssen. Zur...
Electrothermal modeling of multi-emitter heterojunction-bipolartransistors (HBTs) (1994)
A large signal equivalent circuit model for multi-emitter HBTs is proposed. The model is based on the description of a single-emitter-finger HBT which includes the intrinsic transistor temperature as...
Parameter extraction for HBT's temperature dependent large signal equivalent circuit model (1993)
An eleven node large signal HBT model in hybrid-pi configuration is investigated which is derived from HBT technology. This is the first circuit simulation model where the temperature is introduced...
Baureis, P., Göttler, D., Oehler, F., Zwicknagel, P.
A fixed 15.5 dB gain, DC to 10 GHz transimpedance amplifier using AlGaAs / GaAs heterojunction bipolar transistor (HBT) technology is described. A 2 mu m emitter non self-aligned HBT IC process (Ft =...
A new large signal model for heterojunction bipolar transistors including temperature effects (1991)
Baureis, P., McKinley, W., Seitzer, D.
Description of an eight mode heterojunction bipolar transistor model suitable for circuit simulation, for which the Gummel-Poon model was used as a basis. Both the large signal DC characteristics and...
Modeling of self-heating in GaAs/AlGaAs HBT's for accurate circuit and device analysis (1991)
Baureis, P., Seitzer, D., Schaper, U.
An improved HBT large signal model has been developed which allows calculation of intrinsic device temperature as a function of the dissipated power. The time dependence of this power effect is...
Large signal HBT model for TECAP (1991)
A new heterojunction bipolar transistor (HBT) model has been implemented in TECAP. The paper describing this model, A New Large Signal Model for Heterojunction Bipolar Transistors Including...
Five techniques in measuring the parasitic resistances of GaAs FETs are presented. The most accurate methods described in this paper require high gate currrents to reduce the influence of the...
A 4 Gs/s comparator fabricated in an AlGaAs/GaAs heterojunction bipolar process (1991)
Cepl, F., Baureis, P., Seitzer, D., Zwicknagel, P.
This paper describes a comparator circuit fabricated ub ab AlGaAs/GaAs heterojunction bipolar process. Nonlinear current gain, thermal effects, and parasitic base collector resistance have been...