Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001) (2009)
Shen, T., Gu, J. J., Xu, M., Wu, Y. Q., Bolen, M. L., Capano, M. A., ...
Epitaxial graphene films were formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. A high-k gate stack on epitaxial graphene is realized by inserting...
M, Xu, Wu, Y Q, Koybasi, O, Shen, T, Ye, P. D.
GaAs inversion-mode metal-oxide-semiconductor field-effect transistors (MOSFETs) with atomic-layer-deposited Al2O3 as gate dielectrics are fabricated on (111)A and (100) surfaces. With the same...
Sharifi, Hasan, Lahiji, Rosa R, Lin, Han-Chung, Ye, P. D., Katehi, Linda P.B., Mohammadi, Saeed
Investigation of Parylene-N (Pa-N) as a flexible substrate, multilayer dielectric material, and passivation layer for microwave and millimeter-wave integrated circuits is presented. For the first...
Kim, Sunkook, Ju, Sanghyun, Back, Ju Hee, Xuan, Yi, Ye, P. D., Shim, Moonsub, ...
Fully transparent thin-film transistors (FFTs) based on well-aligned single-walled carbon nanotube (SWCNT) arrays with indium tin oxide (ITO) electrodes are achieved. The fully transparent SWCNT-TFTs...
Capture and alignment of phi29 viral particles in sub-40 nanometer porous alumina membranes (2009)
Moon, Jeong-Mi, Akin, Demir, Xuan, Yi, Ye, P. D., Guo, Peixuan, Bashir, Rashid
Bacteriophage phi29 virus nanoparticles and its associated DNA packaging nanomotor can provide for novel possibilities towards the development of hybrid bio-nano structures. Towards the goal of...
Wu, Y Q, Xu, M, Ye, P. D., Cheng, Z, Li, J, Park, J, ...
High quality GaAs epilayers grown by metal-organic chemical vapor deposition are demonstrated on a SiO2-patterned silicon substrate using aspect ratio trapping technique, whereby threading...
Magnetoconductance oscillations in graphene antidot arrays (2008)
Shen, T, Wu, Y Q, Rokhinson, Leonid P, Engel, L W, Ye, P. D.
Epitaxial graphene films have been formed on the C-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. Nanoscale square antidot arrays have been fabricated on these...
Band offsets of atomic-layer-deposited Al2O3 on GaAs and the effects of surface treatment (2008)
Nguyen, N V, Kirillov, Oleg A, Jiang, W, Wang, Wenyong, Suehle, John S, Ye, P. D., ...
The metal gate/high-k dielectric/III-V semiconductor band alignment is one of the most technologically important parameters. We report the band offsets of the Al/Al2O3/GaAs structure and the effect...
Aguirre-Tostado, F S, Milojevic, M, Choi, K J, Kim, H C, Hinkle, C L, Vogel, E M, ...
A systematic study of the interface engineering and dielectric properties of nanolaminated hafnium aluminate on GaAs is presented. The dielectrics were deposited using atomic layer deposition of...
Kim, S, Xuan, Y, Ye, P. D., Mohammadi, Saeed, Lee, S W
Single-walled carbon nanotube field effect transistors (SWNT-FETs) are fabricated by two different alignment techniques. The first technique is based on direct synthesis of an aligned SWNTs array on...
Kim, Sunkook, Ju, Sanghyun, Back, J H, Xuan, Yi, Ye, P. D., Shim, Moonsub, ...
The development of mechanically flexible and/or optically transparent electronics could enable next-generation electronics technologies, which would be easy-to-read, light-weight, unbreakable,...
Magneto-conductance Oscillations in Graphene Antidot Arrays (2008)
Shen, T., Wu, Y. Q., Capano, M. A., Rokhinson, L. R., Engel, L. W., Ye, P. D.
Epitaxial graphene films have been formed on the C-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. Nano-scale square antidot arrays have been fabricated on these...
Main determinants for III-V metal-oxide-semiconductor field-effect transistors (invited) (2008)
Lacking a suitable gate insulator, practical GaAs metal-oxide-semiconductor field-effect transistors (MOSFETs) have remained all but a dream for more than four decades. The physics and chemistry of...
Yang, T, Liu, Y, Ye, P. D., Xuan, Yi, Pal, H, Lundstrom, Mark S.
A systematic capacitance-voltage (C-V) study has been performed on GaAs metal-oxide-semiconductor (MOS) structures with atomic-layer-deposited Al2O3 as gate dielectrics and indium tin oxide (ITO) as...
High-performance inversion-type enhancementmode (E-mode) n-channel In0.65Ga0.35As MOSFETs with atomic-layer-deposited Al2O3 as gate dielectric are demonstrated. A 0.4-mu m gate-length MOSFET with an...
Top-gated graphene field-effect-transistors formed by decomposition of SiC (2008)
Wu, Y Q, Ye, P. D., Capano, Michael A, Xuan, Yi, Sui, Y, Qi, Minghao, ...
Top-gated, few-layer graphene field-effect transistors (FETs) fabricated on thermally decomposed semi-insulating 4H-SiC substrates are demonstrated. Physical vapor deposited SiO2 is used as the gate...
Top-gated graphene field-effect-transistors formed by decomposition of SiC (2008)
Wu, Y. Q., Ye, P. D., Capano, M. A., Xuan, Y., Sui, Y., Qi, M., ...
Top-gated, few-layer graphene field-effect transistors (FETs) fabricated on thermally-decomposed semi-insulating 4H-SiC substrates are demonstrated. Physical vapor deposited SiO2 is used as the gate...
Atomic-layer-deposited nanostructures for graphene-based nanoelectronics (2008)
Xuan, Yi, Wu, Y Q, Shen, T, Qi, Minghao, Capano, Michael A, Cooper, James A, ...
Graphene is a hexagonally bonded sheet of carbon atoms that exhibits superior transport properties with a velocity of 10(8) cm/s and a room-temperature mobility of >15 000 cm(2)/V s. How to grow gate...
Top-gated graphene field-effect-transistors formed by decomposition of SiC (2008)
Wu, Y. Q., Ye, P. D., Capano, M. A., Xuan, Y., Sui, Y., Qi, M., ...
Top-gated, few-layer graphene field-effect transistors (FETs) fabricated on thermally decomposed semi-insulating 4H-SiC substrates are demonstrated. Physical vapor deposited SiO2 is used as the gate...
Magnetoconductance oscillations in graphene antidot arrays (2008)
Shen, T., Wu, Y. Q., Capano, M. A., Rokhinson, L. P., Engel, L. W., Ye, P. D.
High-performance inversion-type enhancement-mode n-channel In0.65Ga0.35As metal-oxide-semiconductor field-effect transistors (MOSFETs) with atomic-layer-deposited Al2O3 as gate dielectric are...
Lin, H C, Yang, T, Sharifi, Hasan, Kim, S K, Xuan, Y, Shen, T, ...
Enhancement-mode GaAs metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) with ex situ atomic-layer-deposited Al2O3 as gate dielectrics are studied. Maximum drain currents of 211...
Xuan, Y, Wu, Y Q, Lin, H C, Shen, T, Ye, P. D.
High-performance inversion-type enhancement-mode n-channel In0.53Ga0.47As MOSFETs with atomiclayer-deposited (ALD) Al2O3 as gate dielectric are demonstrated. The ALD process on III-V compound...
Yang, T, Xuan, Y, Zemlyanov, Dmitry, Shen, T, Wu, Y Q, Woodall, Jerry M, ...
A systematic capacitance-voltage study has been performed on GaAs metal-oxide-semiconductor (MOS) structures with atomic-layer-deposited HfO2/Al2O3 nanolaminates as gate dielectrics. A HfO2/Al2O3...
Lin, H C, Kim, S K, Chang, D, Xuan, Y, Mohammadi, Saeed, Ye, P. D., ...
Direct-current and radio-frequency characterizations of GaAs metal-insulator-semiconductor field-effect transistors (MISFETs) with very thin self-assembled organic nanodielectrics (SANDs) are...
Hu, W D, Chen, X S, Quan, Z J, Zhang, X M, Huang, Y, Xia, C S, ...
Undoped GaN-based metal-oxide-semiconductor high-electron-mobility-transistors (MOS-HEMTs) with atomic-layer-deposited Al2O3 gate dielectrics are fabricated with gate lengths from 1 µm up to 40...
Atomic layer deposition (ALD) provides a unique opportunity to integrate high-quality gate dielectrics on III-V compound semiconductors. The physics and chemistry of a III-V compound semiconductor...
Wu, Y Q, Xuan, Y, Shen, T, Ye, P. D., Cheng, Z, Lochtefeld, A
Enhancement-mode (E-mode) n-channel InP metal-oxide-semiconductor field-effect transistors (MOSFETs) with 0.75-40 mu m gate length fabricated on a semi-insulating substrate with...
Ju, Sanghyun, Facchetti, Antonio, XUAN, Xi, Liu, Jun, Ishikawa, Fumaiki, Ye, P. D., ...
The development of optically transparent and mechanically flexible electronic circuitry is an essential step in the effort to develop next-generation display technologies, including 'see-through' and...
Ju, Sanghyun, Facchetti, Antonio, Xuan, Yi, Liu, Jun, Ishikawa, Fumaiki, Ye, P. D., ...
The development of optically transparent and mechanically flexible electronic circuitry is an essential step in the effort to develop next-generation display technologies, including 'see-through' and...
Kim, Sunkook, Xuan, Yi, Ye, P. D., Mohammadi, Saeed, Back, J H, Shim, Moonsub
High performance single-walled carbon nanotube field effect transistors (SWCNT-FETs) fabricated with thin atomic layer deposited (ALD) Al2O3 as gate dielectrics and passivation layer are...
Wu, Y. Q., Xuan, Y., Ye, P. D.
As the Moore's Law push device scaling to a fundamental physical limit, alternatives have been attempted to explore tha "Plenty of Room at the Bottom." Chip giant Intel and IBM announced the high-k...
High Performance Inversion-type InGaAs MOSFET with ALD High-k Gate Dielectric (2007)
Xuan, Y., Wu, Y. Q., Lin, H. C., Shen, T., Ye, P. D.
The silicon basec complementary metal-oxide-semicoonductor (CMOS) technology now faces ever shrinking device dimensions and demands for higher performance. The latest advance in CMOS industry...
Wu, Y Q, Shen, T, Ye, P. D., Wilk, G D
The authors report on an Al2O3 gate oxide deposited on n-type GaN by atomic layer deposition technique. The high-frequency C-V characteristic shows deep-depletion behavior at room temperature due to...
Wu, Y Q, Lin, H C, Ye, P. D., Wilk, G D
Current-voltage characteristics have been measured for an ultrathin atomic-layer-deposited Al2O3 on GaAs as a function of film thickness, ambient temperature, and electric field. Current transport...
Xu, W. D., Chen, X. S., Quan, Z. J., Xia, C. S., Lu, W., Ye, P. D.
Undoped GaN-based metal-oxide-semiconductor high-electron-mobility transistors !MOS-HEMTs" with atomic-layer-deposited Al2O3 gate dielectrics are fabricated with gate lengths from 1 up to 40 !m....
Lin, H. C., Ye, P. D., Xuan, Y., Lu, G., Facchetti, A., Marks, T. J.
High-performance GaAs metal-insulator-semiconductor field-effect-transistors
Xuan, Y., Ye, P. D., Lin, H. C., Wilk, G. D.
Atomic layer deposition
Xuan, Y., Lin, H. C., Ye, P. D., Wilk, G. D.
Atomic layer deposition
Melting of a 2D Quantum Electron Solid in High Magnetic Field (2006)
Chen, Yong P., Sambandamurthy, G., Wang, Z. H., Lewis, R. M., Engel, L. W., Tsui, D. C., ...
The melting temperature ($T_m$) of a solid is generally determined by the pressure applied to it, or indirectly by its density ($n$) through the equation of state. This remains true even for helium...
Current-transport properties of atomic-layer-deposited ultrathin Al2O3 (2006)
Lin, H. C., Ye, P. D., Wilk, G. D.
We report detailed current-transport studies of ultrathin Al2O3 dielectrics on GaAs grown by atomic layer deposition (ALD) as a function of film thickness, ambient temperature and electric field. The...
Lai, K., Ye, P. D., Pan, W., Tsui, D. C., Lyon, S. A., Muhlberger, M., ...
Metal-oxide-semiconductor field-effect transistors (MOSFET's) using atomic-layer-deposited (ALD) Al$_2$O$_3$ as the gate dielectric are fabricated on the Si/Si$_{1-x}$Ge$_x$ heterostructures. The...
Chen, Yong P., Wang, Z. H., Lewis, R. M., Ye, P. D., Engel, L. W., Tsui, D. C., ...
We have measured high frequency magnetotransport of a high quality two-dimensional electron system (2DES) near the reentrant insulating phase (RIP) at Landau fillings ($\nu$) between 1/5 and 2/9. The...
Evidence for Two Different Solid Phases of Two Dimensional Electrons in High Magnetic Fields (2004)
Chen, Yong P., Lewis, R. M., Engel, L. W., Tsui, D. C., Ye, P. D., Wang, Z. H., ...
We have performed RF spectroscopy on very high quality two dimensional electron systems in the high magnetic field insulating phase, usually associated with a Wigner solid (WS) pinned by disorder. We...
Lewis, R. M., Chen, Yong, Engel, L. W., Tsui, D. C., Ye, P. D., Pfeiffer, L. N., ...
For filling factors $\nu$ in the range between 4.16 and 4.28, we simultaneously detect {\it two} resonances in the real diagonal microwave conductivity of a two--dimensional electron system (2DES) at...
Wigner crystalization about $\nu$=3 (2003)
Lewis, R. M., Chen, Yong, Engel, L. W., Tsui, D. C., Ye, P. D., Pfeiffer, L. N., ...
We measure a resonance in the frequency dependence of the real diagonal conductivity, Re[$\sigma_{xx}$], near integer filling factor, $\nu=3$. This resonance depends strongly on $\nu$, with peak...
Microwave Resonance of 2D Wigner Crystal around integer Landau fillings (2003)
Chen, Yong P., Lewis, R. M., Engel, L. W., Tsui, D. C., Ye, P. D., Pfeiffer, L. N., ...
We have observed a resonance in the real part of the finite frequency diagonal conductivity using microwave absorption measurements in high quality 2D electron systems near {\em integer fillings}....
Microwave resonances of the bubble phases in 1/4 and 3/4 filled higher Landau levels (2002)
Lewis, R. M., Ye, P. D., Engel, L. W., Tsui, D. C., Pfeiffer, L. N., West, K. W.
We have measured the diagonal conductivity in the microwave regime of an ultrahigh mobility two dimensional electron system. We find a sharp resonance in Re[sigma_{xx}] versus frequency when nu > 4...
Ye, P. D., Engel, L. W., Tsui, D. C., Lewis, R. M., Pfeiffer, L. N., West, K.
The insulator terminating the fractional quantum Hall series at low Landau level filling \nu is generally taken to be a pinned Wigner crystal (WC), and exhibits a microwave resonance that is...
Giant microwave photoresistance of two-dimensional electron gas (2001)
Ye, P. D., Engel, L. W., Tsui, D. C., Simmons, J. A., Wendt, J. R., Vawter, G. A., ...
We measure microwave frequency (4-40 GHz) photoresistance at low magnetic field B, in high mobility 2D electron gas samples, excited by signals applied to a transmission line fabricated on the sample...
High Magnetic Field Microwave Conductivity of 2D Electrons in an Array of Antidots (2001)
Ye, P. D., Engel, L. W., Tsui, D. C., Simmons, J. A., Wendt, J. R., Vawter, G. A., ...
We measure the high magnetic field ($B$) microwave conductivity, Re$\sigma_{xx}$, of a high mobility 2D electron system containing an antidot array. Re$\sigma_{xx}$ vs frequency ($f$) increases...