Low frequency noise in silicon carbide Schottky diodes (1997)
Anghel, L., Ouisse, T., Billon, T., Lassagne, P., Jaussaud, C.
The excess low frequency noise of silicon carbide Schottky diodes has been systematically measured on n-type SiC devices with Ti gates. The noise results have been related to general properties such...
Experimental investigation of noise sources in silicon carbide Schottky barriers (1996)
Anghel, L., Ouisse, T., Billon, T., Lassagne, P., Jaussaud, C.
The excess low frequency noise of silicon carbide Schottky diodes has been systematically measured on n-type silicon carbide devices with Ti gate. The noise results have been related to general...