P. Shakya

Direct measurement of the electronic spin diffusion length in a fully functional organic spin valve by low-energy muon spin rotation (2009)

Drew, Alan J., Hoppler, Julian, Schulz, Leander, Pratt, F. L., Desai, P., Shakya, P., ...

Electronic devices that use the spin degree of freedom hold unique prospects for future technology. The performance of these 'spintronic' devices relies heavily on the efficient transfer of spin...

Direct measurement of the electronic spin diffusion length in a fully functional organic spin valve by low-energy muon spin rotation (2009)

Drew, Alan J., Hoppler, Julian, Schulz, Leander, Pratt, F. L., Desai, P., Shakya, P., ...

Electronic devices that use the spin degree of freedom hold unique prospects for future technology. The performance of these 'spintronic' devices relies heavily on the efficient transfer of spin...

Intrinsic Mobility Limit for Anisotropic Electron Transport in Alq₃ (2008)

Drew, Alan J., Pratt, F. L., Hoppler, Justin, Schulz, Leander, Malik-Kumar, Vivek, Morley, N. A., ...

Muon spin relaxation has been used to probe the charge carrier motion in the molecular conductor Alq₃ (tris[8-hydroxy-quinoline] aluminum). At 290 K, the magnetic field dependence of the muon spin...

Intrinsic Mobility Limit for Anisotropic Electron Transport in Alq₃ (2008)

Drew, Alan J., Pratt, F. L., Hoppler, Justin, Schulz, Leander, Malik-Kumar, Vivek, Morley, N. A., ...

Muon spin relaxation has been used to probe the charge carrier motion in the molecular conductor Alq₃ (tris[8-hydroxy-quinoline] aluminum). At 290 K, the magnetic field dependence of the muon spin...

Intrinsic mobility limit for anisotropic electron transport in Alq3 (2008)

Drew, AJ, Pratt, FL, Hoppler, J, Schulz, L, Malik-Kumar, V, Morley, NA, ...

Direct measurement of the electronic spin diffusion length in a fully functional organic spin valve by low-energy muon spin rotation (2008)

Drew, A. J., Hoppler, J, Schulz, L, Pratt, F. L., Desai, P, Shakya, P, ...

Electronic devices that use the spin degree of freedom hold unique prospects for future technology. The performance of these 'spintronic' devices relies heavily on the efficient transfer of spin...