Scientific Commons: P. Verheyen

The impact of different process parameters, namely, the trench etch depth, the total epitaxial SiGe thickness, and the epi elevation, on the leakage current of recessed Si0.8Ge0.2 source/drain...

pMOSFET with 200% mobility enhancement induced by multiple stressors (2006)

Nouri, F, Thirupapuliyur, S, Verheyen, P, Moroz, V, ...

Recessed Si0.8Ge0.2 source/drain (S/D) and a compressive contact etch-stop layer have been successfully integrated resulting in nearly 200% improvement in hole mobility. This is the largest reported...

The future of high-K on pure germanium and its importance for GeCMOS (2005)

Delabie, A, Van Elshocht, S, Kubicek, S, Verheyen, P, De Jaeger, B, ...

A comparison between atomic layer chemical vapor deposition (ALCVD) and metal organic chemical vapor deposition (MOCVD) HfO2 layers on Ge indicate that ALCVD layers have some improved capacitor...

Tilburg bekent kleur. Voorstel tot inrichting van een Tilburgse talenschool voor leerlingen in het basisonderwijs (2005)

Extra, G., Asimakopoulos, D., Boin, A., Hendriks, C., Ruiter, A. De, Verheyen, P., ...

Tooth discolouration and its treatment using KTP laser-assisted tooth whitening (2004)

Walsh, L. J., Liu, J.Y., Verheyen, P.

Tooth discolouration and its treatment using KTP laser-assisted tooth whitening (2004)

Walsh, L. J., Liu, J.Y., Verheyen, P.

The missing link in budget models of nonprofit institutions : two practical Dutch applications (1995)

Verheyen, P.

The Economic Explanation of the Jump of the Co-State Variable (1991)

Verheyen, P.

Transposon tn5 mutagenesis of actinophage vwb-dna propagated in escherichia-coli by cosmid cloning (1986)

Verheyen, P